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Renesas 7164L45TDB

Part No.:
7164L45TDB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.300", 7.62mm)
Datasheet:
Aetrix7164L45TDB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,528

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Product details

Overview

7164L45TDB from Renesas Electronics is a 64K (8K × 8-bit) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports military temperature range (–55°C to +125°C) in a 28-pin SOJ package. Used in avionics control modules requiring non-volatile SRAM with fast read/write cycles and power-loss resilience.

For engineers reviewing the 7164L45TDB datasheet, 7164L45TDB pinout, 7164L45TDB application, or 7164L45TDB equivalent, key selection criteria include standby current (≤5 µA), data retention voltage (2.0 V), dual chip select architecture for flexible memory mapping, and MIL-STD-883 Class B compliance for high-reliability embedded systems.

Technical Context

The 7164L45TDB implements fully static asynchronous operation-no clocks or refresh required-and uses dual active-low chip selects (CS1, CS2) with hierarchical power-down: CS2 asserts standby independently of CS1, while CS1 alone enables low-power standby only when CS2 is deasserted. This allows selective memory bank isolation in multi-SRAM systems.

Its write cycle supports both WE-controlled and CS-controlled timing modes, with guaranteed tWP = 45 ns and tWHZ = 10 ns. The L-version's data retention mode activates automatically when VCC drops below 2.0 V while maintaining CS1 > VHC or CS2 < VLC, preserving contents without external circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 8K × 8-bit (65,536 bits); supports byte-wide data bus interfacing without external demultiplexing.
Access Time (tAA) 45 ns max at VCC = 5.0 V ±10%, TA = –55°C to +125°C; ensures deterministic timing in real-time military control loops.
Supply Voltage 4.5 V to 5.5 V; compatible with standard 5 V logic rails and tolerant of transient droop during switching events.
Data Retention Voltage 2.0 V min (L version only); enables direct connection to backup lithium battery or supercapacitor without regulator.
Standby Current (ISB) 5 µA max at VCC = 5.5 V, TA = +125°C; reduces system-level quiescent power in always-on subsystems.
Operating Temperature –55°C to +125°C (MIL grade); qualified per MIL-STD-883, Class B for deployment in harsh-environment platforms.
I/O Compatibility TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOL ≤ 0.4 V @ 8 mA); interoperable with legacy 5 V microcontrollers and FPGAs.

Pinout & Package

7164L45TDB is supplied in a 28-pin Small Outline J-Lead (SOJ) package (SD28 code), 300 mil width, with gull-wing leads and pin 1 marked by dot orientation.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs 13-bit address bus; selects one of 8,192 memory locations; latched on CS/WE transitions, no external latch needed.
I/O0–I/O7 Bidirectional Data Bus Three-state CMOS drivers; high-impedance when CS inactive or OE high; supports shared bus arbitration.
CS1, CS2 Chip Select Inputs CS1 active-low, CS2 active-low; CS2 dominates-asserting CS2 forces standby regardless of CS1 state.
WE Write Enable Active-low; initiates write when CS1 low and CS2 high; controls data capture timing independent of OE.
OE Output Enable Active-low; enables output drivers only during read cycles; decouples read timing from write control.
VCC, GND Power Supply Single 5 V supply; internal regulation not required; ground pin (15) placed between I/O groups to minimize noise coupling.

Key Features

Feature Design Value
Battery backup data retention Operates down to 2.0 V VCC with ICCDR ≤ 60 µA (TA = +25°C); eliminates need for external retention supervisor IC.
Dual chip select power management CS2-driven standby reduces ISB to 5 µA even if CS1 remains asserted; enables partial memory banking power gating.
Fully static asynchronous architecture No clocks, no refresh cycles required; simplifies timing design and eliminates hidden refresh latency in deterministic systems.
MIL-STD-883 Class B qualification Screened for mechanical shock, vibration, temperature cycling, and hermeticity; meets reliability requirements for flight-critical hardware.
TTL-compatible interface Direct connection to 5 V microcontrollers (e.g., Intel 80C86, Motorola 68000) without level-shifting or pull-up resistors.

Applications

Avionics Flight Control Unit Tactical Radio Baseband Processor

Use Scenario: Real-time servo loop buffering in fly-by-wire systems where loss of main power must not corrupt last valid control state.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding actuator command history and fault registers during brownout.

Use Value: 2 V data retention preserves critical flight data without auxiliary power circuitry, reducing BOM count and board area.

Use Scenario: Storing channel equalization coefficients and encryption keys in software-defined radios operating in extreme thermal environments.

IC Role / Device Role / Timing Role: High-reliability configuration memory accessed during boot and runtime reconfiguration under EMI stress.

Use Value: MIL-STD-883 qualification ensures stable operation across –55°C to +125°C ambient, eliminating thermal derating margins.

Secure Military Data Logger Hardened Industrial PLC I/O Module

Use Scenario: Capturing sensor telemetry during mission-critical field operations where intermittent power interruption is common.

IC Role / Device Role / Timing Role: Write-through buffer with guaranteed 45 ns tAA and tWP, synchronized to FPGA-based DMA controller.

Use Value: Dual CS architecture allows background logging to proceed while foreground processing accesses other memory banks.

Use Scenario: Storing I/O state snapshots and diagnostic logs in explosion-proof programmable logic controllers deployed in oil refinery control rooms.

IC Role / Device Role / Timing Role: Deterministic-access SRAM interfaced to ARM Cortex-M7 via parallel bus with zero wait states.

Use Value: 5 µA ISB at +125°C extends battery-backed runtime during extended AC mains failure without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXIT 512K × 16-bit organization; 3.3 V core; 45 ns access; built-in auto-power-down mode. Requires level translation for 5 V systems; higher density but incompatible bus width without multiplexing. Select when migrating to 3.3 V systems and needing larger memory footprint; not drop-in for 5 V TTL buses.
AS6C4008-45ZIN 512K × 8-bit; 5 V operation; 45 ns access; industrial temp only (–40°C to +85°C); no data retention mode. Lacks 2 V data retention and MIL-STD-883 qualification; unsuitable for flight or armored vehicle deployments. Choose for cost-sensitive commercial/industrial designs where military-grade reliability and battery backup are unnecessary.

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-45ZIN, the 7164L45TDB uniquely delivers 5 V TTL compatibility, MIL-STD-883 Class B screening, and 2 V data retention in a pin-compatible 28-pin SOJ footprint-making it irreplaceable in legacy 5 V military platforms requiring zero-modification upgrades.

Availability

7164L45TDB is available at Aetrix Electronics and suitable for avionics control units, secure data loggers, tactical radio basebands, and hardened industrial PLC modules requiring stable component supply across extended lifecycle commitments.

Supply support for 7164L45TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The IDT7164 family-now part of Renesas' legacy memory portfolio-was designed specifically for high-reliability, 5 V parallel-interface SRAM applications in defense, aerospace, and industrial control where long-term obsolescence resistance and MIL-spec qualification are mandatory.

FAQ

What is the minimum supply voltage required to retain data in 7164L45TDB?

The 7164L45TDB guarantees data retention down to 2.0 V VCC (per Table 10, VDR parameter). This applies only to the "L" (low-power) version and is validated across the full military temperature range (–55°C to +125°C). Below 2.0 V, data integrity is not assured, and the device enters undefined state.

Does 7164L45TDB require an external clock or refresh signal?

No, the 7164L45TDB is a fully static RAM and requires no clock or refresh signals. Its asynchronous architecture relies solely on address, chip select, write enable, and output enable timing-enabling deterministic operation in hard real-time systems without hidden refresh latency.

How does the dual chip select (CS1/CS2) architecture function in 7164L45TDB?

In the 7164L45TDB, CS2 has priority: asserting CS2 LOW forces standby mode regardless of CS1 state. CS1 LOW + CS2 HIGH enables normal operation. This hierarchy allows selective memory bank isolation-e.g., keeping one SRAM active while others enter low-power state in multi-bank systems.

Is 7164L45TDB compliant with modern environmental regulations like RoHS?

Yes, 7164L45TDB is a green part (per Ordering Information note on page 9) and complies with RoHS Directive 2011/65/EU and REACH SVHC requirements. It contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

What package type and pin count does 7164L45TDB use?

The 7164L45TDB uses a 28-pin Small Outline J-Lead (SOJ) package, 300 mil width, with SD28 package code. Pin 1 is marked by a dot, and the package conforms to JEDEC MS-013AC standards with gull-wing leads for surface-mount assembly.

7164L45TDB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164L45TDB FAQ

1.How can I place an order for 7164L45TDB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164L45TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164L45TDB reliable?

The price and inventory of 7164L45TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L45TDB is usually 5 days.

3.What payment methods are accepted for 7164L45TDB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L45TDB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164L45TDB?

7164L45TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164L45TDB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164L45TDB?

For technical support, including 7164L45TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L45TDB requirements.

6.How does Aetrix verify that 7164L45TDB is sourced from the original manufacturer or authorized distributors?

All 7164L45TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L45TDB meets industry standards.

7.What is the process for return or replacement of 7164L45TDB?

All 7164L45TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L45TDB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164L45TDB part is unused and in its original packaging.

Return procedure for 7164L45TDB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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