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Renesas 7164L55DB

Part No.:
7164L55DB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.600", 15.24mm)
Datasheet:
Aetrix7164L55DB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,112

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Product details

Overview

7164L55DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 55 ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports standby power reduction via dual chip select control (CS1/CS2). Used in avionics, radar processors, and hardened embedded controllers requiring non-volatile SRAM persistence under brownout.

For engineers reviewing the 7164L55DB datasheet, 7164L55DB pinout, 7164L55DB application, or 7164L55DB equivalent, key selection criteria include military temperature range (–55°C to +125°C), CERDIP-28 package compatibility, 2 V data retention capability, and dual-CS standby power management for mission-critical systems.

Technical Context

The 7164L55DB implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select logic where CS1 HIGH or CS2 LOW forces automatic entry into low-power standby mode. Its L-version architecture enables data retention at VCC as low as 2 V while maintaining full read/write functionality at 5 V ±10%.

It features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), output drive capability of 8 mA sink / –4 mA source, and supports both WE-controlled and CS-controlled write timing modes. The device complies with MIL-STD-883 Class B for high-reliability military deployment.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization8K × 8-bit (65,536 bits), enabling byte-wide data bus interfacing without external demultiplexing
Access Time (tAA)55 ns max at –55°C to +125°C, defining worst-case address-to-data valid delay in military environments
Data Retention Voltage2.0 V min, allowing persistent memory state during main power failure or brownout conditions
Supply Voltage5.0 V ±10%, simplifying integration with standard 5 V logic rails and eliminating need for dedicated regulators
Operating Temperature–55°C to +125°C, qualified per MIL-STD-883 Class B for sustained operation in extreme aerospace/defense platforms
Package Type28-pin CERDIP (CD28), providing hermetic sealing and thermal stability for high-reliability PCB mounting
Input/Output CompatibilityTTL-compatible I/O levels, ensuring direct interface with legacy 5 V microcontrollers and FPGAs without level-shifting

Pinout & Package

7164L55DB is housed in a 28-pin ceramic dual in-line package (CERDIP), designated CD28, with 0.600-inch body width and through-hole mounting. Pin 1 is marked by a dot on the top surface.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address Inputs13-bit address bus accepting full 8K address space; all inputs TTL-compatible with VIH ≥ 2.2 V
I/O0–I/O7Bidirectional Data BusThree-state CMOS I/O pins supporting read/write data transfer; high-impedance when deselected or during write cycles
CS1, CS2Chip Select InputsActive-LOW CS1 and active-HIGH CS2 enable dual-select logic: CS1 HIGH or CS2 LOW forces standby mode (ISB)
WEWrite EnableActive-LOW control signal determining write cycle initiation; supports both WE- and CS-controlled timing modes
OEOutput EnableActive-LOW signal gating output drivers; outputs enter high-Z when OE is HIGH or device is deselected
VCC, GNDPower SupplySingle 5 V supply rail with decoupling recommended; GND serves as reference for all TTL-compatible I/O thresholds
NCNo ConnectPin 13 is unconnected internally; must remain floating or tied to ground per layout best practices

Key Features

FeatureDesign Value
Battery backup data retentionRetains stored data at VCC ≥ 2.0 V, enabling seamless operation during primary power interruption in flight control systems
Dual chip select standby modeAutomatic transition to low-power ISB state when CS1 = HIGH or CS2 = LOW, reducing ICCSB to 5 µA max in military grade
MIL-STD-883 Class B complianceFully tested to military screening standards including temperature cycling, hermeticity, and radiation hardness assurance
Three-state bidirectional I/OEnables direct connection to shared data buses without external bus transceivers, minimizing component count in compact avionics modules
Static asynchronous architectureEliminates need for clock generation or periodic refresh circuitry, simplifying system timing design and reducing EMI sources

Applications

Avionics Flight Control MemoryRadar Signal Processing Buffer

Use Scenario: Stores real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs operating across –55°C to +125°C ambient.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data during engine start-up and transient voltage events.

Use Value: 2 V data retention ensures zero data loss during 5 V rail collapse, meeting DO-254 Level A functional safety requirements.

Use Scenario: Buffers intermediate FFT results in airborne pulse-Doppler radar front-ends exposed to wide thermal swings and EMI.

IC Role / Device Role / Timing Role: High-speed 55 ns read/write memory interfaced directly to FPGA-based signal chain for latency-sensitive processing.

Use Value: TTL-compatible I/O and 8 mA drive strength eliminate level shifters, reducing board area and signal integrity risk.

Hardened Industrial PLC I/O CacheMilitary Communications Crypto Key Store

Use Scenario: Holds volatile I/O mapping tables and motion control trajectory buffers in oilfield drilling controllers deployed in desert or arctic environments.

IC Role / Device Role / Timing Role: Standby-mode SRAM retaining state during mains power interruptions and generator switchover events.

Use Value: Dual CS logic reduces standby current to <5 µA, extending battery-backed runtime beyond 72 hours.

Use Scenario: Secures cryptographic key material in SATCOM terminals where physical tampering and power analysis are threat vectors.

IC Role / Device Role / Timing Role: Tamper-evident memory node with rapid write disable upon voltage anomaly detection.

Use Value: Hermetic CERDIP packaging prevents microprobing; 55 ns access enables fast key loading without pipeline stalls.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
7164S55DBStandard power version (no 2 V data retention); higher ISB current (200 µA vs. 5 µA)Lacks battery backup capability; unsuitable for brownout-resilient designsSelect only if lowest standby power is not required and cost sensitivity outweighs retention needs
IS61LV25616AL-10TLI3.3 V supply, 10 ns access, 256K × 16 organization; no MIL-STD-883 qualificationHigher density but incompatible voltage and qualification; requires redesign of power and logic interfaceConsider only for commercial upgrades where military qualification is waived and 5 V legacy interface is abandoned

Compared with 7164S55DB, the 7164L55DB delivers critical 2 V data retention and 40× lower standby current-essential for battery-backed avionics. Against IS61LV25616AL-10TLI, it trades speed and density for guaranteed military reliability, hermetic packaging, and 5 V interoperability without level shifting.

Availability

7164L55DB is available at Aetrix Electronics and suitable for avionics flight control, radar signal processing, hardened industrial PLCs, and military communications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 7164L55DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT7164 family-now part of Renesas' legacy high-reliability memory portfolio-was designed specifically for military and aerospace applications demanding MIL-STD-883 qualified static RAM with battery backup and wide-temperature operation.

FAQ

What is the minimum supply voltage required to retain data in the 7164L55DB?

The 7164L55DB guarantees data retention down to 2.0 V (VDR), as specified in Table 10 of the Renesas datasheet. This applies across the full military temperature range (–55°C to +125°C) and enables operation during brownout conditions without data loss. The 7164L55DB maintains this specification only in its L-version configuration; the S-version does not support sub-4.5 V retention.

Does the 7164L55DB require an external clock or refresh circuitry?

No, the 7164L55DB uses fully static CMOS architecture and requires no clock input or periodic refresh cycles. All operations-including read, write, and standby-are controlled solely by address, data, and control signals (CS1, CS2, WE, OE). This eliminates timing-critical clock distribution and reduces system-level EMI, making the 7164L55DB ideal for deterministic real-time systems like flight control computers.

How does the dual chip select (CS1/CS2) logic affect power consumption in the 7164L55DB?

In the 7164L55DB, asserting CS1 HIGH or CS2 LOW automatically places the device into low-power standby mode (ISB), reducing supply current to ≤5 µA over the full military temperature range. This dual-path control allows flexible system-level power gating-e.g., CS2 can be held HIGH while CS1 is toggled for burst access, or CS1 held LOW while CS2 manages background sleep. The 7164L55DB's ISB current is 40× lower than the standard-power 7164S55DB variant.

Is the 7164L55DB pin-compatible with other members of the IDT7164 family?

Yes, the 7164L55DB shares identical pinout and footprint with all IDT7164 variants in the CD28 (28-pin CERDIP) package, including 7164S55DB, 7164L25DB, and 7164S20DB. Signal assignments for A0–A12, I/O0–I/O7, CS1, CS2, WE, OE, VCC, GND, and NC are functionally and physically identical. This allows drop-in replacement within the same speed grade and package type without PCB modification.

What packaging and screening standards apply to the 7164L55DB?

The 7164L55DB is supplied in a 28-pin hermetically sealed CERDIP (CD28) package and is fully screened to MIL-STD-883 Class B requirements, including Method 1015 (steady-state life test), Method 2003 (thermal shock), and Method 2017 (hermeticity). It meets temperature cycling (–55°C to +125°C), mechanical shock, and vibration specifications defined for high-reliability defense electronics. The 7164L55DB carries no RoHS exemption markings and complies with Renesas' green materials policy.

7164L55DB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164L55DB FAQ

1.How can I place an order for 7164L55DB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164L55DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164L55DB reliable?

The price and inventory of 7164L55DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L55DB is usually 5 days.

3.What payment methods are accepted for 7164L55DB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L55DB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164L55DB?

7164L55DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164L55DB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164L55DB?

For technical support, including 7164L55DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L55DB requirements.

6.How does Aetrix verify that 7164L55DB is sourced from the original manufacturer or authorized distributors?

All 7164L55DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L55DB meets industry standards.

7.What is the process for return or replacement of 7164L55DB?

All 7164L55DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L55DB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164L55DB part is unused and in its original packaging.

Return procedure for 7164L55DB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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