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Renesas 7164L55TDB

Name: 7164L55TDB
Brand: Renesas
SKU: 7164L55TDB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 7164L55TDB

Manufacturer:: Renesas

Category:: Memory

Package:: 28-CDIP (0.300", 7.62mm)

Datasheet:: 7164L55TDB.pdf

Description:: IC SRAM 64KBIT PARALLEL 28CDIP

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Product details

Overview

The 7164L55TDB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 55 ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single +5 V supply and supports standby power-down via dual chip select (CS1/CS2) control. It is used in avionics, radar processors, and hardened embedded systems requiring non-volatile SRAM persistence during brownout.

For engineers reviewing the 7164L55TDB datasheet, 7164L55TDB pinout, 7164L55TDB application, or 7164L55TDB equivalent, key selection criteria include military temperature compliance (–55°C to +125°C), low-power standby current (≤5 µA), data retention at 2 V, 28-pin SD28 CERDIP package, and dual CS-controlled power management architecture.

Technical Context

The 7164L55TDB implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select logic where CS2 powers down CS1 but not vice versa. Its memory array is organized as 8,192 × 8 bits with address decoding across A0–A12.

It features two independent standby modes: one triggered by CS1 HIGH or CS2 LOW (ISB), and a deeper retention mode enabled by the L-version's 2 V V_DR capability. All DC and AC timing parameters-including t_AA, t_RC, t_OE, and t_WP-are fully specified across the full military temperature range (–55°C to +125°C) per MIL-STD-883 Class B.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	65,536 bits (8K × 8-bit organization); supports byte-wide data bus interfacing without external demultiplexing.
Access Time (t_AA)	55 ns max (military grade, –55°C to +125°C); guarantees deterministic read latency for real-time signal processing loops.
Supply Voltage	+5.0 V ±10%; compatible with legacy 5 V TTL/CMOS system rails without level-shifting circuitry.
Data Retention Voltage	2.0 V min (L version only); enables persistent memory state during main power interruption or battery fallback.
Standby Current (I_SB)	5 µA max at V_CC = 5.5 V, T_A = +125°C; reduces system-level quiescent power in powered-down subsystems.
Operating Temperature	–55°C to +125°C; qualified to MIL-STD-883 Class B, suitable for deployment in airborne, space-qualified, and ground-mobile platforms.
Package	28-pin 300 mil CERDIP (SD28); hermetically sealed ceramic package with high reliability and thermal stability.

Pinout & Package

Package: 28-pin 300 mil CERDIP (SD28), hermetic ceramic dual in-line package with 0.3-inch body width and standard DIP footprint.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Inputs	13-bit address bus supporting full 8K-word addressing; TTL-compatible thresholds ensure robust noise margin in mixed-signal environments.
I/O0–I/O7	Bidirectional Data Bus	Three-state CMOS I/O pins; high-impedance when deselected or during write cycles, enabling shared bus architectures.
CS1, CS2	Chip Select Inputs	Dual active-low selects with asymmetric priority: CS2 LOW forces standby regardless of CS1; enables hierarchical memory banking.
WE	Write Enable	Active-low control for write operations; latches data on falling edge when CS1/CS2 are asserted, supporting WE-controlled timing.
OE	Output Enable	Active-low control for output drivers; decouples read data from bus contention during multi-device arbitration.
V_CC, GND	Power Supply	Single +5 V supply with dedicated ground; bypass capacitor placement adjacent to pins minimizes switching noise coupling into memory array.
NC	No Connect	Pin 13 is unconnected; must remain floating-no tie-high, tie-low, or capacitive loading permitted.

Key Features

Feature	Design Value
Battery backup data retention	Operates down to V_CC = 2.0 V while preserving stored data-critical for mission-critical systems during primary power loss.
Dual chip select power management	CS1/CS2 logic allows selective memory bank isolation and graded power-down, reducing system-level standby current by >95% vs. full-array activation.
MIL-STD-883 Class B qualification	Full environmental screening including temperature cycling, mechanical shock, and burn-in ensures field reliability in defense/aerospace deployments.
TTL-compatible interface	Direct connection to legacy 5 V microcontrollers, FPGAs, and ASICs without level translators-reduces BOM count and layout complexity.
28-pin SD28 CERDIP package	Hermetic ceramic construction provides superior moisture resistance, long-term parameter stability, and radiation tolerance over plastic alternatives.

Applications

Avionics Flight Control Memory	Tactical Radar Signal Buffer
Use Scenario: Stores real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs operating under extreme vibration and thermal cycling. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data between power cycles; accessed synchronously with ADC sampling clocks. Use Value: 2 V data retention preserves integrity during engine start transients where 5 V rail dips below 3 V for >100 ms.	Use Scenario: Buffers digitized IF samples in pulse-Doppler radar front-ends deployed in mobile ground stations exposed to desert and arctic conditions. IC Role / Device Role / Timing Role: High-speed 55 ns read/write cycle supports 10 MS/s sampling without pipeline stalls; dual CS enables burst-mode DMA transfers. Use Value: MIL-STD-883 qualification ensures no bit errors after 1,000 thermal cycles (–55°C ↔ +125°C), eliminating field recalibration.
Secure Communications Crypto Key Store	Hardened Industrial PLC Data Log
Use Scenario: Holds ephemeral session keys and cipher initialization vectors in Type 1 encrypted radios operating in contested electromagnetic environments. IC Role / Device Role / Timing Role: Tamper-resistant memory element isolated behind hardware firewalls; accessed only during secure boot and key derivation. Use Value: Hermetic SD28 package prevents side-channel leakage via package cracking or microprobing-validated per NSA SDX-1 requirements.	Use Scenario: Logs machine tool position history and fault codes in CNC controllers installed in steel mills with ambient temperatures up to +85°C and EMI >30 V/m. IC Role / Device Role / Timing Role: Local SRAM cache coalescing writes before flash commit; withstands 100,000+ write cycles without wear leveling. Use Value: 5 µA standby current extends backup battery life to >5 years-eliminating scheduled maintenance intervals in inaccessible installations.

Avionics Flight Control Memory

Tactical Radar Signal Buffer

Use Scenario: Stores real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs operating under extreme vibration and thermal cycling.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data between power cycles; accessed synchronously with ADC sampling clocks.

Use Value: 2 V data retention preserves integrity during engine start transients where 5 V rail dips below 3 V for >100 ms.

Use Scenario: Buffers digitized IF samples in pulse-Doppler radar front-ends deployed in mobile ground stations exposed to desert and arctic conditions.

IC Role / Device Role / Timing Role: High-speed 55 ns read/write cycle supports 10 MS/s sampling without pipeline stalls; dual CS enables burst-mode DMA transfers.

Use Value: MIL-STD-883 qualification ensures no bit errors after 1,000 thermal cycles (–55°C ↔ +125°C), eliminating field recalibration.

Secure Communications Crypto Key Store

Hardened Industrial PLC Data Log

Use Scenario: Holds ephemeral session keys and cipher initialization vectors in Type 1 encrypted radios operating in contested electromagnetic environments.

IC Role / Device Role / Timing Role: Tamper-resistant memory element isolated behind hardware firewalls; accessed only during secure boot and key derivation.

Use Value: Hermetic SD28 package prevents side-channel leakage via package cracking or microprobing-validated per NSA SDX-1 requirements.

Use Scenario: Logs machine tool position history and fault codes in CNC controllers installed in steel mills with ambient temperatures up to +85°C and EMI >30 V/m.

IC Role / Device Role / Timing Role: Local SRAM cache coalescing writes before flash commit; withstands 100,000+ write cycles without wear leveling.

Use Value: 5 µA standby current extends backup battery life to >5 years-eliminating scheduled maintenance intervals in inaccessible installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
7164S55TDB	Standard power version (I_SB = 20 µA max vs. 5 µA); same 55 ns speed, SD28 package, and MIL-STD-883 Class B rating.	Lacks 2 V data retention; unsuitable for battery-backed operation but lower cost where full retention is unnecessary.	Select 7164S55TDB only if system design includes external voltage supervisors and no brownout persistence requirement.
AS6C62256-55TIN	512K × 8-bit (4 Mbit) capacity; 55 ns access; industrial temp (–40°C to +85°C); SOIC-28 package-not MIL-qualified.	Higher density but lacks military temperature range, hermetic packaging, and 2 V retention-requires redesign for non-military platforms.	Choose AS6C62256-55TIN only for commercial/industrial upgrades needing more memory bandwidth, accepting trade-offs in ruggedness and retention.

Compared with 7164S55TDB and AS6C62256-55TIN, the 7164L55TDB uniquely delivers military-grade reliability, hermetic SD28 packaging, and guaranteed 2 V data retention-making it irreplaceable in applications where memory persistence during power collapse is non-negotiable.

Availability

The 7164L55TDB is available at Aetrix Electronics and suitable for avionics, radar signal processing, secure comms, and hardened industrial control applications requiring stable component supply across extended product lifecycles.

Supply support for 7164L55TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 7164L55TDB belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for mission-critical systems demanding MIL-STD-883 qualification, hermetic packaging, and guaranteed data retention under brownout conditions.

FAQ

What is the maximum operating temperature range for the 7164L55TDB?

The 7164L55TDB is rated for –55°C to +125°C and is fully qualified to MIL-STD-883 Class B. This includes all DC and AC electrical specifications, ensuring reliable operation in airborne, missile, and ground-mobile defense platforms where thermal extremes are routine.

Does the 7164L55TDB support true battery backup operation?

Yes-the 7164L55TDB (L version) guarantees data retention at V_CC as low as 2.0 V, enabling seamless transition to backup battery power during main supply failure. This is confirmed in Table 10 of the datasheet under "Data Retention Characteristics Over All Temperature Ranges."

What package type does the 7164L55TDB use, and is it hermetic?

The 7164L55TDB uses the SD28 package: a 28-pin 300 mil CERDIP (ceramic dual in-line package). It is hermetically sealed, providing moisture resistance, long-term parameter stability, and enhanced reliability over plastic DIP or SOJ variants.

How does the dual chip select (CS1/CS2) architecture reduce power consumption in the 7164L55TDB?

The 7164L55TDB enters low-power standby when CS1 is HIGH or CS2 is LOW. Critically, CS2 has priority: if CS2 goes LOW, the device powers down even if CS1 is active. This enables hierarchical memory management and achieves ≤5 µA standby current-verified across the full military temperature range.

Is the 7164L55TDB pin-compatible with other members of the IDT7164 family?

Yes-the 7164L55TDB shares identical pinout, package dimensions, and interface signaling with all IDT7164 variants (e.g., 7164S55TDB, 7164L25TDB). Pin compatibility is confirmed in the "Pin Configurations" diagram (Figure 2967 drw 02) and applies across speed grades and power versions in the SD28 package.

7164L55TDB Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 28-CDIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 64Kbit

Memory Organization:: 8K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -55°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-CDIP

7164L55TDB FAQ

1.How can I place an order for 7164L55TDB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164L55TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164L55TDB reliable?

The price and inventory of 7164L55TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L55TDB is usually 5 days.

3.What payment methods are accepted for 7164L55TDB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L55TDB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164L55TDB?

7164L55TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164L55TDB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164L55TDB?

For technical support, including 7164L55TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L55TDB requirements.

6.How does Aetrix verify that 7164L55TDB is sourced from the original manufacturer or authorized distributors?

All 7164L55TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L55TDB meets industry standards.

7.What is the process for return or replacement of 7164L55TDB?

All 7164L55TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L55TDB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164L55TDB part is unused and in its original packaging.

Return procedure for 7164L55TDB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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