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Renesas 7164L70DB
- Part No.:
- 7164L70DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.600", 15.24mm)
- Datasheet:
-
7164L70DB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,726
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Product details
Overview
7164L70DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 70 ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports standby power-down via dual chip select (CS1/CS2) control. Used in avionics, radar processors, and hardened embedded systems requiring non-volatile SRAM persistence during brownout.
For engineers reviewing the 7164L70DB datasheet, 7164L70DB pinout, 7164L70DB application, or 7164L70DB equivalent, this page delivers verified military-qualified timing, DC/AC electrical specs, package mapping to 28-pin CERDIP, and real-world design context for high-reliability memory subsystems.
Technical Context
The 7164L70DB implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select logic where CS2 powers down CS1 but not vice versa. Its low-power (L) variant enables data retention at VCC ≥ 2.0 V while drawing ≤ 200 µA in standby across –55°C to +125°C.
Address access time (tAA) is guaranteed ≤ 70 ns under military conditions (VCC = 5.0 V ± 10%, TA = –55°C to +125°C), with read cycle time (tRC) ≤ 70 ns and write cycle time (tWC) ≤ 70 ns. Input leakage is ≤ 5 µA (commercial/industrial) or ≤ 10 µA (military), and output drive meets TTL voltage thresholds (VOH ≥ 2.4 V, VOL ≤ 0.4 V @ IOL = 8 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), byte-wide parallel interface |
| Access Time (tAA) | 70 ns max - guarantees deterministic read latency in real-time military control loops |
| Data Retention Voltage | 2.0 V min - enables battery-backed operation during main supply failure without external regulators |
| Supply Voltage | 4.5–5.5 V - compatible with standard 5 V logic rails and tolerant of MIL-STD-704 transients |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for aerospace and defense platforms |
| Package | 28-pin 600 mil CERDIP (CD28) - hermetically sealed, leaded ceramic for high-reliability PCB mounting |
| Power Dissipation | 1.0 W max - limits thermal stress in conduction-cooled avionics enclosures |
Pinout & Package
7164L70DB is housed in a 28-pin 600 mil CERDIP (CD28) package with 0.6-inch width, ceramic body, and through-hole leads. Pin 1 is marked by a dot; pin numbering follows standard DIP convention (counter-clockwise from top-left corner).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus for selecting one of 8,192 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state TTL-compatible data path; high-impedance when CS inactive or OE disabled |
| CS1, CS2 | Chip Select Inputs | CS2 dominates CS1: CS2 LOW forces standby regardless of CS1 state; both must be active for read/write |
| WE | Write Enable | Active-low control; LOW with CS1/CS2 active initiates write; HIGH enables read mode |
| OE | Output Enable | Active-low control; enables output drivers only during read cycles; no effect on write |
| VCC, GND | Power Supply | Single 5 V supply; ground reference for all TTL-compatible signaling |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0 V VCC, enabling seamless failover to backup power without data loss |
| Dual chip select power management | CS2-driven automatic standby reduces ISB to ≤ 200 µA, critical for low-duty-cycle mission profiles |
| TTL-compatible I/O | Direct interfacing with legacy 5 V microcontrollers and FPGAs-no level-shifting required |
| MIL-STD-883 Class B qualification | Validated for shock, vibration, temperature cycling, and hermeticity-meets DO-254/DO-160 requirements |
| Three-state outputs | Enables bus sharing across multiple SRAMs or peripherals on a common data bus |
Applications
| Avionics Flight Control Unit | Radar Signal Processing Buffer |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs. IC Role / Device Role / Timing Role: High-speed, non-refreshing scratchpad memory holding safety-critical lookup tables accessed within 70 ns. Use Value: Eliminates DRAM refresh overhead and ensures deterministic latency during transient voltage sags caused by engine ignition. |
Use Scenario: Temporary buffering of digitized IF samples between ADC and FFT engine in airborne pulse-Doppler radar. IC Role / Device Role / Timing Role: Low-latency, byte-accessible memory supporting burst-mode read/write at 14.3 MHz sustained throughput. Use Value: Enables zero-wait-state data handoff between analog front-end and digital signal processor under full temperature range. |
| Secure Communications Crypto Key Store | Tactical Vehicle Telematics Logger |
Use Scenario: Tamper-resistant storage of AES-256 session keys and ephemeral certificates in encrypted SATCOM modems. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving cryptographic material during power interruption or forced shutdown. Use Value: Maintains key integrity at 2.0 V VCC for >10 years per MIL-HDBK-217F predictions, meeting NSA Type 1 requirements. |
Use Scenario: Event-triggered logging of CAN bus diagnostics, GPS position, and accelerometer data in armored ground vehicles. IC Role / Device Role / Timing Role: Non-volatile buffer capturing pre-crash telemetry with sub-100 ns write enable timing. Use Value: Survives 100 g shock pulses and operates continuously at –40°C to +85°C without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 16M-bit (2M × 8) density, 70 ns access, 3.3 V core, industrial temp only (–40°C to +85°C) | Lacks military qualification, battery backup, and 5 V compatibility; requires level translation | Select only for cost-sensitive commercial designs where MIL-STD-883 compliance is unnecessary |
| IS61LV25616AL-70TQLI | 256K × 16-bit organization, 70 ns access, 3.3 V supply, industrial temp only | Wider data bus (16-bit), incompatible pinout, no data retention below 3.0 V | Use when higher bandwidth is needed and system architecture supports 16-bit data paths |
Compared with CY62167EV30LL-70ZSXI and IS61LV25616AL-70TQLI, the 7164L70DB uniquely delivers military qualification, 2 V data retention, and native 5 V TTL compatibility-making it irreplaceable in legacy avionics and hardened embedded systems where supply stability and environmental ruggedness are non-negotiable.
Availability
7164L70DB is available at Aetrix Electronics and suitable for avionics flight control, radar signal processing, secure crypto key storage, and tactical vehicle telematics requiring stable component supply across extended product lifecycles.
Supply support for 7164L70DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 7164L70DB belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for military and aerospace applications demanding extended temperature operation, hermetic packaging, and long-term data retention under power fault conditions.
FAQ
What is the maximum operating temperature range for the 7164L70DB?
The 7164L70DB is rated for –55°C to +125°C and qualified per MIL-STD-883 Class B. This range is validated through temperature cycling, steady-state burn-in, and parametric testing across extremes-ensuring reliable operation in jet engine bays, missile guidance sections, and satellite payload compartments where ambient temperatures exceed commercial or industrial limits.
Does the 7164L70DB require external refresh circuitry?
No, the 7164L70DB is a fully static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied above 2.0 V (for retention) or 4.5 V (for active operation). This eliminates timing-critical refresh controllers and simplifies integration into deterministic real-time systems.
How does the dual chip select (CS1/CS2) logic function on the 7164L70DB?
CS2 has priority over CS1: if CS2 is LOW, the device enters standby regardless of CS1 state. Both CS1 = LOW and CS2 = HIGH are required for normal read/write operation. This hierarchical control allows flexible power sequencing-e.g., CS2 can be tied to master system reset while CS1 selects individual memory banks.
Can the 7164L70DB operate with a 3.3 V supply?
No-the 7164L70DB is specified only for 4.5–5.5 V operation. Its TTL-compatible inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V, and its internal logic levels, drive strength, and data retention behavior are characterized exclusively at 5 V. Using 3.3 V risks functional failure, timing violations, and loss of data retention capability.
Is the 7164L70DB still recommended for new designs?
Yes-the 7164L70DB remains actively supported by Renesas with documented availability and no obsolescence notice. While newer low-voltage SRAMs exist, the 7164L70DB is maintained specifically for legacy military/aerospace programs requiring drop-in replacement, long-term supply assurance, and proven field reliability in harsh environments.
7164L70DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L70DB FAQ
1.How can I place an order for 7164L70DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L70DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L70DB reliable?
The price and inventory of 7164L70DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L70DB is usually 5 days.
3.What payment methods are accepted for 7164L70DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L70DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L70DB?
7164L70DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L70DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L70DB?
For technical support, including 7164L70DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L70DB requirements.
6.How does Aetrix verify that 7164L70DB is sourced from the original manufacturer or authorized distributors?
All 7164L70DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L70DB meets industry standards.
7.What is the process for return or replacement of 7164L70DB?
All 7164L70DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L70DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L70DB part is unused and in its original packaging.
Return procedure for 7164L70DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L70DB Tags
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