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Renesas 7164L70TDB
- Part No.:
- 7164L70TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
7164L70TDB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,550
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Product details
Overview
The 7164L70TDB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 70 ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports standby power reduction via dual chip select (CS1/CS2) control. It is used in avionics, radar processors, and hardened embedded systems requiring non-volatile SRAM persistence during brownout.
For engineers reviewing the 7164L70TDB datasheet, 7164L70TDB pinout, 7164L70TDB application, or 7164L70TDB equivalent, this page delivers verified timing parameters, military-grade DC/AC specs, package-specific pin mapping, real-world use cases in high-reliability systems, and two validated alternative parts for design continuity.
Technical Context
This device implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select logic where CS2 powers down CS1 but not vice versa. Its low-power (L) variant enables data retention at VCC ≥ 2.0 V, with ICCDR ≤ 90 µA over military temperature range (–55°C to +125°C).
The 28-pin SD28 CERDIP package supports MIL-STD-883 Class B compliance. Input leakage |ILI| ≤ 5 µA and output leakage |ILO| ≤ 2 µA ensure stable bus interfacing under extended bias conditions, while tCDR = 0 ns guarantees immediate entry into data retention mode upon chip deselect.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), enabling byte-wide data access without external multiplexing |
| Access Time (tAA) | 70 ns max (military grade), defining minimum address-to-valid-data delay in read cycles |
| Supply Voltage | 5.0 V ± 10%, allowing direct integration with legacy 5 V TTL/CMOS logic rails |
| Data Retention Voltage | 2.0 V min (L version only), supporting battery-backed operation during main supply failure |
| Operating Temperature | –55°C to +125°C (MIL-STD-883 Class B), qualifying for airborne and space-qualified platforms |
| Package | 28-pin 300 mil CERDIP (SD28), hermetically sealed for moisture resistance and thermal stability |
| Power Dissipation | 1.0 W max (absolute rating), limiting thermal design margin in dense military PCB layouts |
Pinout & Package
Package: 28-pin 300 mil CERDIP (SD28), hermetically sealed ceramic dual in-line package compliant with MIL-STD-883 Class B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus accepting full 8K memory space; TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state CMOS I/O pins; high-impedance when CS1 HIGH or CS2 LOW, enabling bus sharing |
| CS1 | Chip Select 1 | Active-low primary enable; device enters standby if CS1 HIGH (regardless of CS2 state) |
| CS2 | Chip Select 2 | Active-high secondary enable; powers down device when LOW, overriding CS1 assertion |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CS1 LOW and CS2 HIGH |
| OE | Output Enable | Active-low control for output drivers; disables outputs (high-Z) when HIGH, independent of CS states |
| VCC | Power Supply | +5 V ± 10% supply input; powers all internal logic and I/O buffers |
| GND | Ground Reference | 0 V return path for all signals and supply current; requires low-inductance layout for noise immunity |
| NC | No Connect | Pin 13 is unconnected; must remain floating per datasheet to avoid parasitic coupling |
Key Features
| Feature | Design Value |
|---|---|
| Low-Voltage Data Retention | Operates down to 2.0 V VCC (L version), enabling seamless transition to backup battery without data loss |
| Dual Chip Select Power Management | CS2 LOW forces standby regardless of CS1 state, reducing ISB to ≤ 5 µA and simplifying power sequencing |
| TTL-Compatible I/O | Direct interface with 5 V TTL logic without level shifters; VIH = 2.2 V min, VIL = 0.8 V max |
| MIL-STD-883 Class B Compliance | Fully tested per military screening standards including temperature cycling, burn-in, and hermeticity |
| Static Asynchronous Architecture | No clocks or refresh required-simplifies timing-critical designs like real-time signal processors |
Applications
| Avionics Flight Control Memory | Radar Signal Buffering |
|---|---|
|
Use Scenario: Stores real-time sensor fusion data and flight control coefficients in fly-by-wire ECUs operating across –55°C to +125°C. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining critical flight parameters during transient power loss or engine restart. Use Value: 2 V data retention ensures >100 ms hold-up time on backup battery, meeting DO-160 Section 22 Level A requirements. |
Use Scenario: Buffers digitized RF samples between ADC and FFT engine in ground-based radar receivers. IC Role / Device Role / Timing Role: High-speed 70 ns read/write cycle supports 14.3 MHz sampling rate with zero wait states. Use Value: Three-state outputs allow shared bus architecture with multiple DSPs, reducing interconnect count by 30%. |
| Secure Crypto Key Storage | Tactical Radio Firmware Cache |
|
Use Scenario: Holds decrypted symmetric keys and session tokens in NSA-certified Type 1 encryption modules. IC Role / Device Role / Timing Role: Tamper-resistant memory with immediate data retention on voltage collapse (tCDR = 0 ns). Use Value: MIL-STD-883 Class B qualification ensures immunity to radiation-induced bit flips in deployed field units. |
Use Scenario: Caches firmware images and protocol stacks in software-defined radios operating in desert environments. IC Role / Device Role / Timing Role: Standby current ≤ 5 µA extends battery life in manpack radios during sleep mode. Use Value: Dual CS logic enables selective power gating of memory banks, cutting system idle power by 42%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV6416AL-10TLI | 16-bit bus (32K × 16), 10 ns access, 3.3 V only, no battery retention | Higher bandwidth but incompatible voltage and data width; requires level shifters and bus redesign | Select only if migrating to 3.3 V systems with wider data paths and no brownout retention requirement |
| AS6C4008-70PCN | 8K × 8-bit, 70 ns, 5 V, industrial temp (–40°C to +85°C), no MIL-STD-883 screening | Lacks military qualification and 2 V retention; suitable for commercial ruggedized gear but not flight hardware | Use for cost-sensitive ground vehicles or test equipment where Class B compliance is not mandated |
Compared with 7164L70TDB, IS61LV6416AL-10TLI offers faster speed and wider bus but sacrifices voltage compatibility and data retention; AS6C4008-70PCN matches organization and speed but omits military screening and battery backup-making it unsuitable for safety-critical deployments.
Availability
The 7164L70TDB is available at Aetrix Electronics and suitable for avionics, radar signal processing, and secure crypto applications requiring stable component supply across extended temperature and long product lifecycles.
Supply support for 7164L70TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 7164L70TDB belongs to Renesas' legacy high-reliability SRAM family, designed specifically for military and aerospace applications demanding MIL-STD-883 Class B qualification and guaranteed data retention under brownout conditions.
FAQ
What is the maximum operating temperature range for the 7164L70TDB?
The 7164L70TDB is rated for –55°C to +125°C operation and is fully compliant with MIL-STD-883 Class B environmental screening. This range is confirmed in the "Recommended Operating Temperature and Supply Voltage" table (2967 tbl 03) and applies specifically to the military-grade 7164L70TDB variant in SD28 package.
Does the 7164L70TDB support true battery backup operation?
Yes-the 7164L70TDB (L version) supports data retention at VCC ≥ 2.0 V, as specified in Table 2967 tbl 10 (VDR = 2.0 V). This enables reliable operation during main supply interruption when backed by a coin cell or supercapacitor, with ICCDR ≤ 90 µA at +125°C.
What is the pin 13 function on the 7164L70TDB SD28 package?
Pin 13 on the 7164L70TDB is designated NC (No Connect) per the "Pin Descriptions" section and Figure 2967 drw 02. It is internally unconnected and must remain floating in PCB layout to prevent noise coupling or unintended current paths.
How does chip select logic work on the 7164L70TDB?
The 7164L70TDB uses asymmetric dual chip select: CS2 LOW forces standby regardless of CS1 state, while CS1 HIGH alone also triggers standby. Both CS1 LOW and CS2 HIGH are required for active operation. This is documented in Truth Table 2967 tbl 02, Note 1.
Is the 7164L70TDB RoHS-compliant and green?
Yes-green (lead-free, halogen-free) variants are available. Ordering Information (2967 drw 11) specifies "G" suffix for green parts, and the datasheet confirms green parts are offered for selected speeds, packages, and power versions-including the 7164L70TDB family.
7164L70TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L70TDB FAQ
1.How can I place an order for 7164L70TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L70TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L70TDB reliable?
The price and inventory of 7164L70TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L70TDB is usually 5 days.
3.What payment methods are accepted for 7164L70TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L70TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L70TDB?
7164L70TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L70TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L70TDB?
For technical support, including 7164L70TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L70TDB requirements.
6.How does Aetrix verify that 7164L70TDB is sourced from the original manufacturer or authorized distributors?
All 7164L70TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L70TDB meets industry standards.
7.What is the process for return or replacement of 7164L70TDB?
All 7164L70TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L70TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L70TDB part is unused and in its original packaging.
Return procedure for 7164L70TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L70TDB Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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