Renesas 7164L85DB
- Part No.:
- 7164L85DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.600", 15.24mm)
- Datasheet:
-
7164L85DB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:

- Shipping:

Inventory:3,819
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
The 7164L85DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 85 ns maximum access time, TTL-compatible I/O, single 5V supply operation, and battery backup data retention down to 2V. It features dual chip select (CS1/CS2) for low-power standby mode and is packaged in a 28-pin 600 mil CERDIP for high-reliability embedded systems requiring stable memory in harsh environments.
For engineers reviewing the 7164L85DB datasheet, 7164L85DB pinout, 7164L85DB application, or 7164L85DB equivalent, this page delivers verified timing parameters, military-grade DC/AC specifications, true standby current values, pin-accurate terminal roles, and confirmed drop-in alternatives - all validated against Renesas' official 7164S/L datasheet (Rev. Jul.30.20).
Technical Context
The 7164L85DB implements fully static asynchronous architecture-no clocks or refresh required-and uses dual chip select logic where CS2 powers down CS1 but not vice versa. Its low-power (L) variant enables data retention at VCC ≥ 2.0 V with ICCDR ≤ 300 µA over –55°C to +125°C.
Address access time (tAA) is guaranteed ≤85 ns across the full military temperature range (–55°C to +125°C), with read cycle time (tRC) ≤85 ns and write cycle time (tWC) ≤85 ns. Standby current (ISB) is ≤5 µA at VCC = 5.0 V and TA = +25°C, and input/output leakage currents are specified at ±2 µA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), byte-wide parallel interface |
| Access Time (tAA) | ≤85 ns max at –55°C to +125°C; enables real-time data buffering in avionics control loops |
| Data Retention Voltage | 2.0 V min (L version only); supports battery-backed SRAM operation during main power loss |
| Supply Voltage | 4.5 V to 5.5 V; compatible with standard 5V TTL/CMOS system rails without regulation overhead |
| Standby Current (ISB) | ≤5 µA at VCC = 5.0 V, TA = +25°C; reduces quiescent power in always-on mission-critical subsystems |
| Operating Temperature | –55°C to +125°C (MIL-STD-883 Class B compliant); qualified for flight-critical and ground-vehicle electronics |
| I/O Compatibility | TTL-input and TTL-output levels; eliminates level-shifting circuitry in mixed-logic designs |
Pinout & Package
Package: 28-pin 600 mil CERDIP (CD28), hermetically sealed ceramic dual in-line package with glass-sealed leads for moisture resistance and thermal stability in extended military temperature operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus; selects one of 8,192 memory locations (2¹³ = 8K) |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; three-state outputs enable direct bus sharing without external transceivers |
| CS1, CS2 | Chip Select Inputs | Active-low CS1 and active-high CS2 provide hierarchical power-down control; CS2 forces standby even if CS1 is asserted |
| WE | Write Enable | Active-low signal enabling write cycles; overlapping low WE, low CS1, and high CS2 initiates data storage |
| OE | Output Enable | Active-low control for output drivers; disables I/O pins to high-impedance when deasserted during reads |
| VCC, GND | Power Supply | Single 5V supply with dedicated ground; decoupling required per MIL-STD-883 layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock or refresh circuitry needed-reduces system complexity and EMI in deterministic real-time systems |
| Dual chip select power management | CS2-driven standby mode cuts ISB to ≤5 µA, enabling ultra-low-power hold states during processor sleep |
| Battery backup data retention | Maintains stored data at VCC ≥ 2.0 V, supporting seamless failover in battery-buffered avionics memory modules |
| MIL-STD-883 Class B compliance | Qualified for military applications including vibration, shock, temperature cycling, and hermeticity testing |
| Three-state TTL-compatible I/O | Direct interface to legacy 5V microprocessor buses (e.g., 8086, Z80) without level shifters or bus buffers |
Applications
| Avionics Flight Control Memory | Tactical Radios with Secure Boot |
|---|---|
Use Scenario: Stores real-time sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs operating across –55°C to +125°C. IC Role / Device Role / Timing Role: Primary volatile program/data RAM interfaced directly to a radiation-tolerant microcontroller via 8-bit parallel bus. Use Value: 85 ns tAA ensures deterministic response within 100 µs control loop deadlines; MIL-STD-883 qualification guarantees reliability under aircraft vibration and thermal stress. |
Use Scenario: Holds cryptographic keys and boot firmware images during cold start and brownout recovery in encrypted HF/VHF radios. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical security assets when main 5V rail drops below 4.5V. Use Value: 2.0 V data retention voltage allows >72-hour hold-up using a single 3.6V lithium thionyl chloride cell; low ISB extends battery life. |
| Ground Vehicle Engine Control Units | Military Data Loggers |
Use Scenario: Captures transient engine knock sensor waveforms and calibration tables in diesel-powered armored vehicles exposed to desert and arctic extremes. IC Role / Device Role / Timing Role: High-speed buffer memory between ADC front-end and ARM-based controller running real-time OS. Use Value: TTL compatibility eliminates interface logic; 600 mil CERDIP withstands mechanical shock up to 100g and thermal cycling per MIL-STD-810. |
Use Scenario: Records GPS position, IMU telemetry, and environmental sensor data during unmanned reconnaissance missions lasting >30 days. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM backed by supercapacitor, retaining last-known state after main power failure. Use Value: ≤5 µA ISB enables multi-year data retention on primary battery; 28-pin CD28 footprint supports conformal coating and ruggedized PCB assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 7164S85DB | Standard power version: ISB ≤ 10 µA (vs. L-version's ≤5 µA); no 2V data retention capability | Suitable for non-battery-backed systems where standby current is less critical than cost | Select 7164S85DB only if battery backup is unnecessary and higher ISB is acceptable in the target thermal environment |
| AS6C62256-85ZIN | 256K × 1-bit organization (vs. 8K × 8-bit); 85 ns access, industrial temp (–40°C to +85°C), SOIC-28 | Lacks military qualification and data retention below 4.5 V; higher density but incompatible bus width | Use AS6C62256-85ZIN only in commercial/industrial designs requiring larger memory depth and SOIC packaging |
Compared with 7164S85DB and AS6C62256-85ZIN, the 7164L85DB uniquely combines military temperature range, hermetic CERDIP packaging, sub-5 µA standby current, and 2V data retention-making it irreplaceable in battery-backed, high-reliability defense systems where pin-for-pin substitution is not feasible.
Availability
The 7164L85DB is available at Aetrix Electronics and suitable for avionics flight control, tactical radio secure boot, ground vehicle engine control, and military data logger applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 7164L85DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with deep heritage in high-reliability memory and microcontroller design.
The 7164L85DB belongs to Renesas' legacy IDT-branded CMOS static RAM product line, engineered specifically for military and aerospace applications demanding MIL-STD-883 qualification, hermetic packaging, and guaranteed data retention under brownout conditions.
FAQ
What is the maximum operating temperature range for the 7164L85DB?
The 7164L85DB is rated for –55°C to +125°C operation and is fully compliant with MIL-STD-883, Class B. This specification is verified across all AC and DC parameters in the Renesas datasheet (Rev. Jul.30.20), including access time, standby current, and data retention behavior. The 7164L85DB must be operated within this range to maintain guaranteed performance and reliability.
Does the 7164L85DB support battery backup operation, and what is the minimum retention voltage?
Yes, the 7164L85DB supports battery backup operation with guaranteed data retention down to VCC = 2.0 V, as specified in Table 10 (Data Retention Characteristics) of the Renesas datasheet. This feature is exclusive to the "L" (low-power) variant and is validated across the full military temperature range. The 7164L85DB retains data indefinitely at 2.0 V with ICCDR ≤ 300 µA.
What package type is used for the 7164L85DB, and is it hermetically sealed?
The 7164L85DB is supplied in a 28-pin 600 mil CERDIP (CD28) package - a ceramic dual in-line package with glass-sealed leads. Per the Renesas ordering information and package drawings, CD28 is explicitly defined as a hermetically sealed, moisture-resistant construction qualified for military use. This distinguishes it from plastic DIP or SOJ variants.
How does the dual chip select (CS1/CS2) logic function on the 7164L85DB?
The 7164L85DB uses asymmetric dual chip select logic: CS1 is active-low and CS2 is active-high. As stated in the Truth Table (Table 2), CS2 forces standby mode even when CS1 is asserted - meaning CS2 has priority. When CS2 goes LOW or CS1 goes HIGH, the device enters low-power standby with ISB ≤ 5 µA. This behavior is confirmed in both functional description and timing diagrams of the 7164L85DB datasheet.
Is the 7164L85DB pin-compatible with other speed grades in the 7164L family?
Yes, all 7164L variants-including 7164L20DB, 7164L25DB, and 7164L85DB-share identical pinout, package footprint (CD28), and electrical interface. The only differences are access time (tAA), power consumption (ISB/ICCDR), and corresponding speed binning. This allows direct replacement within the same package for design margining or obsolescence mitigation without PCB changes.
7164L85DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L85DB FAQ
1.How can I place an order for 7164L85DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L85DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L85DB reliable?
The price and inventory of 7164L85DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L85DB is usually 5 days.
3.What payment methods are accepted for 7164L85DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L85DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L85DB?
7164L85DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L85DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L85DB?
For technical support, including 7164L85DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L85DB requirements.
6.How does Aetrix verify that 7164L85DB is sourced from the original manufacturer or authorized distributors?
All 7164L85DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L85DB meets industry standards.
7.What is the process for return or replacement of 7164L85DB?
All 7164L85DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L85DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L85DB part is unused and in its original packaging.
Return procedure for 7164L85DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L85DB Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
