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Renesas 7164S20DB
- Part No.:
- 7164S20DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.600", 15.24mm)
- Datasheet:
-
7164S20DB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,765
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Product details
Overview
The 7164S20DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 20 ns maximum address access time, TTL-compatible I/O, single 5V supply operation, and three-state outputs - used in high-reliability embedded systems requiring fast, non-refreshing memory with standby power reduction.
For engineers reviewing the 7164S20DB datasheet, 7164S20DB pinout, 7164S20DB application, or 7164S20DB equivalent, this page delivers verified timing specs, military temperature compliance (–55°C to +125°C), DIP package mapping, DC/AC electrical limits, and real-world use context for avionics, defense computing, and ruggedized data acquisition.
Technical Context
This device implements fully static asynchronous logic with no clock or refresh required. It uses dual chip select inputs (CS1 active-low, CS2 active-high) to enable low-power standby mode when either CS1 is HIGH or CS2 is LOW - automatically reducing ICC to ≤2 mA at f = 0 MHz.
Read and write cycles are controlled via independent OE and WE signals, supporting both WE-controlled and CS-controlled timing modes. The 28-pin CERDIP package supports MIL-STD-883 Class B qualification, with all I/Os meeting TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and drive capability (IOL = 8 mA, VOH ≥ 2.4 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), byte-wide parallel interface |
| Access Time (tAA) | 20 ns max - enables sub-50 MHz bus interfacing without wait states |
| Supply Voltage | 5.0 V ±10% - compatible with legacy 5V TTL/CMOS system rails |
| Operating Temperature | –55°C to +125°C - qualified for military-grade environmental stress |
| Standby Current (ISB) | ≤2 mA max - reduces system power during idle periods without data loss |
| I/O Compatibility | TTL-input and TTL-output - eliminates level-shifting in mixed-logic designs |
| Package | 28-pin 600-mil CERDIP (CD28) - hermetically sealed, MIL-STD-883 Class B compliant |
Pinout & Package
28-pin 600-mil ceramic dual in-line package (CERDIP), hermetically sealed, compliant with MIL-STD-883 Class B. Pin 1 marked by orientation dot per Renesas revision 07/30/20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus for 8K-word selection; TTL-compatible, VIH ≥ 2.2 V |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state TTL I/O lines; high-impedance when CS inactive or OE/WE disabled |
| CS1 | Chip Select 1 | Active-low primary enable; device enters standby if driven HIGH |
| CS2 | Chip Select 2 | Active-high secondary enable; device enters standby if driven LOW |
| WE | Write Enable | Active-low control for write cycles; latches data on falling edge when CS active |
| OE | Output Enable | Active-low control for read output drivers; disables outputs when HIGH |
| VCC | Power Supply | +5 V ±10% supply input; decoupling required per MIL-STD-883 layout rules |
| GND | Ground Reference | 0 V return path; separate analog/digital grounding not required due to static CMOS design |
| NC | No Connect | Pin 25 is unconnected - must be left floating or tied to GND per board layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Zero-refresh static operation | Eliminates DRAM controller complexity and refresh overhead in real-time systems |
| Dual chip select power management | Automatic transition to <2 mA standby current when CS1 HIGH or CS2 LOW |
| MIL-STD-883 Class B qualification | Validated for shock, vibration, temperature cycling, and long-term reliability in defense platforms |
| TTL-compatible signaling | Direct interface with 5V microcontrollers, FPGAs, and ASICs without level translation |
| 20 ns access across full military temp range | Guaranteed timing performance from –55°C to +125°C - no derating required |
Applications
| Avionics Flight Control Unit | Tactical Radios |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in airborne mission computers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding critical runtime parameters with deterministic 20 ns read/write latency. Use Value: Enables hard real-time loop execution at >20 kHz without memory wait states or refresh-induced jitter. | Use Scenario: Buffering encrypted voice packets and protocol stack state in manpack and vehicular radios operating in extreme environments. IC Role / Device Role / Timing Role: High-reliability SRAM for packet buffering and cryptographic key staging with MIL-STD-883 validated operation. Use Value: Sustains uninterrupted communication under thermal shock and mechanical vibration where commercial RAM would fail. |
| Artillery Fire Control System | Satellite Onboard Computer |
Use Scenario: Storing ballistic solution tables and sensor calibration data in ground-based targeting systems exposed to desert and arctic conditions. IC Role / Device Role / Timing Role: Temperature-stable memory for lookup tables accessed during fire solution computation cycles. Use Value: Maintains 20 ns access time across –55°C to +125°C - eliminating interpolation or guardbanding in firmware. | Use Scenario: Temporary storage of telemetry buffers and command queue entries in LEO satellite subsystems with radiation-tolerant requirements. IC Role / Device Role / Timing Role: Radiation-hardened adjacent component (used with rad-tolerant controllers) for short-term data staging. Use Value: Hermetic CERDIP packaging and MIL-STD-883 screening reduce single-event latchup risk in space-qualified assemblies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45 ns access, 3.3 V supply, TSOP-II package | Higher density but incompatible voltage and pinout; requires level shifters and PCB redesign | Select only if migrating to 3.3 V architecture and needing >64K capacity |
| AS6C4008-20TIN | 512K × 8-bit, 20 ns access, 5 V supply, 32-pin SOJ, industrial temp only (–40°C to +85°C) | Lacks MIL-STD-883 qualification and extended temperature range; unsuitable for defense deployments | Acceptable for commercial/industrial upgrades where military screening is not mandated |
Compared with CY62167EV30LL-45ZSXIT and AS6C4008-20TIN, the 7164S20DB uniquely delivers 20 ns access within a hermetic, MIL-STD-883 Class B qualified 5 V CERDIP package - making it irreplaceable for legacy military hardware sustainment and new designs demanding proven field reliability.
Availability
The 7164S20DB is available at Aetrix Electronics and suitable for avionics, tactical communications, artillery fire control, and satellite onboard computing requiring stable component supply across extended temperature and lifecycle horizons.
Supply support for 7164S20DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT7164 family - now part of Renesas' legacy memory portfolio - was engineered specifically for high-reliability, zero-refresh memory needs in defense, aerospace, and industrial control systems where deterministic timing and environmental robustness are non-negotiable.
FAQ
What is the maximum operating temperature range for the 7164S20DB?
The 7164S20DB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B, including temperature cycling, mechanical shock, and long-term reliability testing across that full military temperature range. This specification is guaranteed and production-tested per Renesas datasheet Rev. 07/30/20.
Does the 7164S20DB require external refresh circuitry?
No - the 7164S20DB is a fully static RAM using CMOS technology with no refresh requirement. Its asynchronous design operates deterministically with stable data retention as long as VCC remains within 4.5 V–5.5 V and ambient temperature stays within spec. This eliminates refresh overhead in real-time systems using the 7164S20DB.
Is the 7164S20DB pin-compatible with other 7164 variants like the 7164L20DB?
Yes - the 7164S20DB shares identical pinout, package (CD28), and functional interface with the 7164L20DB. The only differences are power profile (standard vs. low-power standby) and data retention capability (the 'L' version supports 2 V data retention; the 'S' version does not). Both are drop-in replacements in circuits where battery backup is not required.
What package type does the 7164S20DB use, and is it RoHS-compliant?
The 7164S20DB uses a 28-pin 600-mil ceramic dual in-line package (CERDIP, code CD28). Per Renesas ordering information, it is a "restricted hazardous substance device" - compliant with RoHS Directive 2011/65/EU and lead-free per JEDEC J-STD-609. Green marking applies; no exemption codes are used.
Can the 7164S20DB operate with a 3.3 V supply?
No - the 7164S20DB is specified only for 5.0 V ±10% (4.5 V–5.5 V) operation. Its TTL-compatible inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V, and its output drive strength (IOL = 8 mA, VOH ≥ 2.4 V) is characterized exclusively at 5 V. Using 3.3 V will result in undefined behavior, failed timing margins, and potential data corruption in the 7164S20DB.
7164S20DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164S20DB FAQ
1.How can I place an order for 7164S20DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164S20DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164S20DB reliable?
The price and inventory of 7164S20DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164S20DB is usually 5 days.
3.What payment methods are accepted for 7164S20DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164S20DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164S20DB?
7164S20DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164S20DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164S20DB?
For technical support, including 7164S20DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164S20DB requirements.
6.How does Aetrix verify that 7164S20DB is sourced from the original manufacturer or authorized distributors?
All 7164S20DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164S20DB meets industry standards.
7.What is the process for return or replacement of 7164S20DB?
All 7164S20DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164S20DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164S20DB part is unused and in its original packaging.
Return procedure for 7164S20DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164S20DB Tags
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