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Renesas 7164S25TDB

Part No.:
7164S25TDB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.300", 7.62mm)
Datasheet:
Aetrix7164S25TDB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,170

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Product details

Overview

The 7164S25TDB from Renesas Electronics is a 64K (8K × 8-bit) high-speed CMOS static RAM with 25 ns maximum address access time, TTL-compatible I/O, and three-state outputs. It operates from a single 5V supply, supports industrial temperature range (–40°C to +85°C), and features automatic low-power standby mode triggered by chip select logic - used in real-time data buffering for legacy industrial controllers and avionics subsystems.

For engineers reviewing the 7164S25TDB datasheet, 7164S25TDB pinout, 7164S25TDB application, or 7164S25TDB equivalent, key selection criteria include verified 25 ns read/write cycle timing, 28-pin SOJ package compatibility, industrial-grade reliability under sustained thermal stress, and direct drop-in replacement capability in existing 64K SRAM-based memory interfaces.

Technical Context

This device implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select (CS1/CS2) logic to enable precise power gating: CS1 HIGH or CS2 LOW forces automatic entry into low-power standby mode. The control architecture supports WE-controlled and CS-controlled write cycles with defined setup/hold timing windows.

It delivers deterministic read cycle behavior across three distinct timing modes (Read Cycles No. 1–3), each with validated parameters for tAA, tOH, tOLZ, and tCHZ. All DC and AC electrical characteristics-including VOL, VOH, ICC, ISB, and leakage currents-are specified over the full industrial temperature range and at VCC = 5.0 V ± 10%.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization8K × 8-bit (65,536 bits), byte-wide parallel interface
Access Time (tAA)25 ns max - guarantees data valid within 25 ns of stable address and active chip select
Supply Voltage5.0 V ± 10% - compatible with standard TTL logic rails without level shifting
Operating Temperature–40°C to +85°C - qualified for industrial embedded systems with thermal cycling
Standby Current (ISB)2 mA max - enables ultra-low quiescent power during inactive periods
I/O InterfaceTTL-compatible inputs and three-state outputs - interoperable with legacy 5V microcontroller buses
Package28-pin SOJ (SD28), 300 mil width - surface-mount footprint for high-density PCB layouts

Pinout & Package

7164S25TDB is housed in a 28-pin Small Outline J-Lead (SOJ) package (SD28 code), 300 mil body width, with gull-wing leads suitable for reflow soldering. Pin 1 is marked by a dot on the top surface.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address Inputs13-bit address bus accepting 0–8191 for full 8K word selection
I/O0–I/O7Bidirectional Data Bus8-bit parallel data path with three-state output drivers controlled by OE and CS
CS1, CS2Chip Select InputsActive-LOW CS1 and active-HIGH CS2 enable hierarchical memory decoding and power-down control
WEWrite Enable InputActive-LOW signal enabling write operations when both CS1 and CS2 are asserted
OEOutput Enable InputActive-LOW control for three-state output drivers - decouples data bus during reads
VCC, GNDPower SupplySingle 5V supply rail and ground reference - no auxiliary voltages required

Key Features

FeatureDesign Value
High-speed access25 ns max tAA ensures compatibility with 20 MHz CPU bus cycles in legacy systems
Low-power standbyAutomatic ISB ≤ 2 mA activation eliminates need for external power management circuitry
TTL compatibilityVIH ≥ 2.2 V and VIL ≤ 0.8 V allow direct interfacing with 5V microcontrollers and FPGAs
Three-state outputsOE-controlled high-impedance state prevents bus contention in multi-device memory systems
Military-grade reliabilityManufactured per MIL-STD-883 Class B - validated for shock, vibration, and extended thermal life

Applications

Industrial PLC Data BufferingAerospace Avionics Memory

Use Scenario: Real-time I/O scanning and status logging in programmable logic controllers operating in factory environments with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Primary 64K SRAM buffer holding process variables, ladder logic state, and diagnostic history between scan cycles.

Use Value: 25 ns access time enables sub-millisecond scan times; industrial temp rating ensures uninterrupted operation at –40°C cold starts and +85°C cabinet peaks.

Use Scenario: Non-volatile configuration storage and runtime scratchpad in flight control computers where radiation tolerance and long-term reliability are critical.

IC Role / Device Role / Timing Role: High-integrity working memory for sensor fusion algorithms and actuator command staging during autonomous flight phases.

Use Value: MIL-STD-883 Class B qualification provides proven resistance to thermal cycling and mechanical stress; 28-pin SOJ allows compact, repairable module design.

Medical Imaging Frame StoreTest & Measurement Equipment

Use Scenario: Temporary frame storage in portable ultrasound devices requiring fast pixel data capture and display refresh without DRAM complexity.

IC Role / Device Role / Timing Role: Dual-port accessible SRAM bank synchronized to ADC sampling clock and display controller timing.

Use Value: Fully static operation eliminates refresh overhead; 25 ns tAA supports >30 fps 1024×768 frame buffering at minimal latency.

Use Scenario: Pattern generation and response capture in automated test equipment for semiconductor wafer probing and board-level functional validation.

IC Role / Device Role / Timing Role: High-speed stimulus/response memory mapping engine interfaced directly to FPGA-based pattern sequencers.

Use Value: Three-state I/O and precise tWHZ/tDW timing enable glitch-free bus sharing with multiple test instruments; SOJ package supports high-density probe card routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXIT512K × 16-bit, 45 ns access, 3.3V core, LVCMOS I/OHigher density and lower voltage - requires level translation and layout redesignSelect only when upgrading memory capacity and migrating to modern 3.3V systems
AS6C4008-25ZIN512K × 8-bit, 25 ns access, 5V TTL-compatible, 32-pin SOJSame speed and voltage but larger package - needs PCB pad revision and routing changesChoose if 512K capacity is needed and board space allows 32-pin footprint

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-25ZIN, the 7164S25TDB offers exact 28-pin SOJ compatibility, guaranteed 25 ns timing at 5V, and seamless integration into legacy industrial designs without voltage translation or layout modification.

Availability

7164S25TDB is available at Aetrix Electronics and suitable for industrial PLC data buffering, aerospace avionics memory, and medical imaging frame store applications requiring stable component supply across extended product lifecycles.

Supply support for 7164S25TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The 7164S25TDB belongs to Renesas' legacy high-reliability static RAM product line, engineered specifically for mission-critical industrial and defense systems demanding long-term availability, MIL-qualified robustness, and pin-stable backward compatibility.

FAQ

What is the maximum operating temperature range for the 7164S25TDB?

The 7164S25TDB is rated for industrial temperature operation from –40°C to +85°C. This specification is validated per manufacturer datasheet Table 2967 tbl 03 and applies across all DC and AC electrical parameters including access time, standby current, and I/O voltage levels. The 7164S25TDB maintains full functionality and timing compliance throughout this range without derating.

Does the 7164S25TDB require a refresh circuit or clock signal?

No, the 7164S25TDB is a fully static RAM and requires no refresh circuit or clock signal. Its internal CMOS latch-based memory cells retain data indefinitely as long as power is applied and address/control signals remain stable. This eliminates timing-critical refresh overhead and simplifies system design - a key advantage confirmed in the "Description" section of the Renesas datasheet.

What package type does the 7164S25TDB use, and is it RoHS-compliant?

The 7164S25TDB uses a 28-pin Small Outline J-Lead (SOJ) package with SD28 code and 300 mil body width. Per Renesas ordering information (page 9), the "G" suffix denotes green (lead-free/RoHS-compliant) variants; however, the base part number 7164S25TDB does not include the G suffix and corresponds to the standard leaded version unless explicitly ordered with "YG" or "YGI" packaging codes.

How does the 7164S25TDB enter low-power standby mode?

The 7164S25TDB enters low-power standby automatically when CS1 is HIGH or CS2 is LOW, as defined in the Truth Table (2967 tbl 02). In this state, ICC drops to ≤2 mA (ISB), and outputs go high-impedance. This behavior is intrinsic to the control logic and requires no external sequencing - a feature explicitly documented in the "Description" and "Features" sections of the datasheet.

Can the 7164S25TDB be used as a direct replacement for the IDT7164S25TDB?

Yes, the 7164S25TDB is the Renesas-branded continuation of the original IDT7164S25TDB. Renesas acquired IDT's memory portfolio and maintains identical specifications, pinout, timing, and package dimensions. The datasheet rebranding on 07/30/20 confirms functional and mechanical equivalence - making the 7164S25TDB a drop-in replacement with no design changes required.

7164S25TDB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164S25TDB FAQ

1.How can I place an order for 7164S25TDB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164S25TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164S25TDB reliable?

The price and inventory of 7164S25TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164S25TDB is usually 5 days.

3.What payment methods are accepted for 7164S25TDB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164S25TDB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164S25TDB?

7164S25TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164S25TDB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164S25TDB?

For technical support, including 7164S25TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164S25TDB requirements.

6.How does Aetrix verify that 7164S25TDB is sourced from the original manufacturer or authorized distributors?

All 7164S25TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164S25TDB meets industry standards.

7.What is the process for return or replacement of 7164S25TDB?

All 7164S25TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164S25TDB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164S25TDB part is unused and in its original packaging.

Return procedure for 7164S25TDB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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