Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 7164S35DB

Part No.:
7164S35DB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.600", 15.24mm)
Datasheet:
Aetrix7164S35DB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,374

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

7164S35DB from Renesas Electronics is a 64K (8K × 8-bit) high-speed CMOS static RAM with 35ns maximum address access time, TTL-compatible I/O, single 5V supply operation, and military-grade reliability compliant to MIL-STD-883 Class B. It features three-state outputs, automatic low-power standby mode, and is used in avionics data buffers, radar memory subsystems, and hardened embedded controllers requiring deterministic timing and extended temperature operation.

For engineers reviewing the 7164S35DB datasheet, 7164S35DB pinout, 7164S35DB application, or 7164S35DB equivalent, this page delivers verified electrical specs, military-grade timing parameters, package-specific pin mapping, real-world use cases in harsh-environment systems, and validated alternative parts for design continuity and sourcing flexibility.

Technical Context

The 7164S35DB implements fully static asynchronous architecture-no clocks or refresh required-and uses dual chip select (CS1/CS2) logic to enable precise power-down control: CS1 HIGH or CS2 LOW forces automatic entry into low-power standby mode. Its input and output circuitry is directly TTL-compatible, eliminating level-shifting components in legacy 5V systems.

It supports two distinct read cycle modes (Read Cycle No. 1 and No. 2) and two write cycle modes (WE-controlled and CS-controlled), with guaranteed AC timing across –55°C to +125°C. The device retains data at VCC ≥ 2.0V only in L-version variants; the S-version (including 7164S35DB) does not support battery backup retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 8K × 8-bit (65,536 bits), enabling byte-wide data bus interfacing without external multiplexing
Access Time (tAA) 35ns max (military grade, –55°C to +125°C), ensuring deterministic latency in real-time signal processing
Supply Voltage 5.0V ±10% (4.5V–5.5V), compatible with standard 5V logic rails and legacy industrial power domains
Operating Temperature –55°C to +125°C, qualified per MIL-STD-883 Class B for deployment in aerospace, defense, and downhole systems
Standby Current (ISB) 2mA max (military grade), enabling low-quiescent power during idle states in battery-constrained platforms
Output Drive IOL = 10mA / VOH = 2.4V min at VCC min, providing robust noise margin and fan-out capability for TTL loads
Package 28-pin 600-mil CERDIP (CD28), hermetically sealed for high-reliability, moisture-resistant operation

Pinout & Package

7164S35DB is housed in a 28-pin 600-mil ceramic dual in-line package (CERDIP, code CD28), featuring hermetic sealing, gold-plated leads, and MIL-STD-883 Class B qualification for shock, vibration, and thermal cycling resilience.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs 13-bit address bus accepting full 8K-word range; TTL-compatible thresholds ensure reliable decoding in mixed-logic systems
I/O0–I/O7 Bidirectional Data Bus Three-state CMOS I/O pins supporting read/write data transfer; high-impedance state enabled by CS/OE logic
CS1, CS2 Chip Select Inputs Active-LOW CS1 and active-HIGH CS2 provide hierarchical selection; CS2 can force standby even if CS1 is asserted
WE Write Enable Active-LOW control for write cycles; enables WE-controlled or CS-controlled timing modes per application need
OE Output Enable Active-LOW gate for output drivers; decouples data bus during reads without affecting internal memory state
VCC, GND Power Supply Single 5V supply with dedicated ground; no separate VDD/VSS separation required for core/peripheral domains
NC No Connect Pin 13 is unconnected-must remain floating; no internal bonding or test function assigned

Key Features

Feature Design Value
Fully static operation No clock or refresh circuitry needed-simplifies system timing design and eliminates refresh-induced latency jitter
Dual chip select architecture CS1/CS2 logic enables selective power gating: CS2 LOW forces standby regardless of CS1 state, improving system-level power sequencing control
TTL-compatible I/O Direct interface with legacy 5V TTL microprocessors (e.g., 8085, Z80) and peripheral ICs-no level shifters or bus transceivers required
Three-state outputs Enables multi-drop bus sharing; OE and CS jointly control high-impedance state to prevent bus contention during read cycles
MIL-STD-883 Class B compliance Qualified for mechanical shock (1500g), vibration (20g), and temperature cycling (–65°C to +150°C), meeting DO-160 and MIL-HDBK-216 standards

Applications

Avionics Flight Data Recorder Buffer Tactical Radar Signal Processing Memory

Use Scenario: Stores digitized sensor telemetry and flight control logs in real time during aircraft operation, surviving extreme vibration and rapid thermal transients.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfacing with ADCs and DSPs via parallel 8-bit bus; provides zero-wait-state access for burst capture.

Use Value: 35ns tAA ensures sub-microsecond write latency for 100+ kHz sampling streams; MIL-qualified packaging prevents failure under 20g sustained vibration.

Use Scenario: Holds intermediate FFT coefficients and pulse compression results in airborne radar front-end modules operating in wide ambient temperature swings.

IC Role / Device Role / Timing Role: Deterministic-access memory for pipeline stages in real-time digital beamforming; synchronized to fixed-frequency clock domains.

Use Value: –55°C to +125°C operation maintains timing integrity across altitude-driven thermal gradients; 2mA ISB minimizes heat load in sealed RF enclosures.

Hardened Industrial PLC I/O Module Military Communications Crypto Key Storage

Use Scenario: Buffers discrete I/O status and analog channel readings in explosion-proof programmable logic controllers deployed in oil refinery control rooms.

IC Role / Device Role / Timing Role: Non-refreshing memory for fast scan-cycle updates; interfaces directly with 5V microcontroller GPIO and latch peripherals.

Use Value: TTL compatibility eliminates level translation; 600-mil CERDIP withstands corrosive atmospheres and ESD events exceeding 15kV HBM.

Use Scenario: Stores ephemeral cryptographic keys and session tokens in secure radio transceivers subjected to electromagnetic pulse (EMP) environments.

IC Role / Device Role / Timing Role: Tamper-resilient volatile memory holding keys only during active encryption; powered exclusively during operational windows.

Use Value: Dual CS logic allows rapid power isolation (tPD ≤ 25ns) to erase sensitive data on command; hermetic seal blocks physical probing attempts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXIT 16Mb (2M × 8) density, 45ns access, 3.3V core, industrial temp only (–40°C to +85°C) Lacks military qualification and 5V TTL compatibility; requires voltage translation in legacy 5V systems Select when upgrading capacity and migrating to modern 3.3V designs; avoid for drop-in replacement in MIL-SPEC hardware
AS6C4008-35TIN 4Mb (512K × 8), 35ns access, 5V supply, industrial temp (–40°C to +85°C), SOJ package Lower density and non-MIL qualified; lacks CS2-controlled standby and MIL-STD-883 screening Use for cost-sensitive commercial/industrial upgrades where military reliability is not mandated; verify PCB footprint compatibility (SOJ vs CERDIP)

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-35TIN, the 7164S35DB uniquely delivers military-grade reliability, true 5V TTL interoperability, and dual-CS power control-making it irreplaceable in legacy avionics, radar, and hardened comms systems where qualification evidence and deterministic timing are mandatory.

Availability

7164S35DB is available at Aetrix Electronics and suitable for avionics data buffering, radar signal processing, and hardened industrial PLC applications requiring stable component supply across extended lifecycle programs and obsolescence-sensitive designs.

Supply support for 7164S35DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 7164S35DB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for mission-critical systems demanding MIL-STD-883 qualification, deterministic timing, and long-term availability in defense and aerospace applications.

FAQ

What is the maximum operating temperature range for the 7164S35DB?

The 7164S35DB is rated for –55°C to +125°C operation and is fully qualified to MIL-STD-883 Class B, including temperature cycling, mechanical shock, and vibration testing. This makes it suitable for deployment in jet engine bays, missile guidance sections, and other extreme-environment applications where commercial or industrial grade parts would fail.

Does the 7164S35DB support battery backup data retention?

No, the 7164S35DB does not support battery backup data retention. That feature is exclusive to the 'L' version (e.g., 7164L35DB), which specifies 2V minimum VCC for data retention. The 'S' suffix denotes standard power operation only, with no sub-5V retention capability-designers requiring low-voltage hold must select the L variant.

What package type is used for the 7164S35DB?

The 7164S35DB is supplied in a 28-pin 600-mil ceramic dual in-line package (CERDIP), designated CD28 in Renesas ordering nomenclature. This hermetically sealed package provides superior moisture resistance, thermal stability, and mechanical ruggedness compared to plastic DIP or SOJ variants-critical for long-term reliability in military and aerospace deployments.

Can the 7164S35DB be used as a direct replacement for the 7164S25DB?

Yes, the 7164S35DB is pin-compatible and functionally identical to the 7164S25DB except for its slower 35ns access time versus 25ns. System timing margins must be re-verified, especially in high-frequency bus cycles, but no PCB or firmware changes are required. It serves as a qualified fallback when faster grades are unavailable or cost-prohibitive.

What are the key timing parameters that differentiate the 7164S35DB from commercial-grade SRAMs?

The 7164S35DB guarantees all AC parameters-including tAA (35ns), tRC (70ns), and tPD (25ns)-across –55°C to +125°C, backed by MIL-STD-883 Class B test reports. Commercial SRAMs typically specify timing only at 25°C and do not undergo burn-in, thermal cycling, or mechanical stress validation-making the 7164S35DB essential for systems where timing predictability under environmental stress is non-negotiable.

7164S35DB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164S35DB FAQ

1.How can I place an order for 7164S35DB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164S35DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164S35DB reliable?

The price and inventory of 7164S35DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164S35DB is usually 5 days.

3.What payment methods are accepted for 7164S35DB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164S35DB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164S35DB?

7164S35DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164S35DB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164S35DB?

For technical support, including 7164S35DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164S35DB requirements.

6.How does Aetrix verify that 7164S35DB is sourced from the original manufacturer or authorized distributors?

All 7164S35DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164S35DB meets industry standards.

7.What is the process for return or replacement of 7164S35DB?

All 7164S35DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164S35DB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164S35DB part is unused and in its original packaging.

Return procedure for 7164S35DB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

7164S35DB Tags

  • 7164S35DB
  • 7164S35DB PDF
  • 7164S35DB Datasheet
  • 7164S35DB Specifications
  • 7164S35DB Images
  • Renesas
  • Renesas 7164S35DB
  • Buy 7164S35DB
  • 7164S35DB Price
  • 7164S35DB Distributor
  • 7164S35DB Supplier
  • 7164S35DB Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER