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Renesas 7164S35TDB
- Part No.:
- 7164S35TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
7164S35TDB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,357
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Product details
Overview
7164S35TDB from Renesas Electronics is a 64K (8K × 8-bit) high-speed CMOS static RAM with 35 ns maximum address access time, TTL-compatible I/O, single +5 V supply operation, and three-state outputs. It features dual chip select (CS1/CS2) for low-power standby mode activation and is packaged in a 28-pin 300 mil CERDIP for industrial/military applications requiring reliable non-refresh memory.
For engineers reviewing the 7164S35TDB datasheet, 7164S35TDB pinout, 7164S35TDB application, or 7164S35TDB equivalent, this device serves as a drop-in replacement for legacy SRAMs in avionics control units, industrial PLC data buffers, and military communication subsystems where deterministic timing and MIL-STD-883 Class B compliance are required.
Technical Context
The 7164S35TDB implements fully static asynchronous architecture-no clocks or refresh cycles needed-and uses dual chip select logic where CS1 LOW + CS2 HIGH enables active read/write, while CS2 LOW or CS1 HIGH forces automatic low-power standby. Its input/output structure supports direct TTL interfacing without level-shifting circuitry.
It delivers guaranteed 35 ns access across the industrial temperature range (–40°C to +85°C), with DC operating conditions specified at VCC = 4.5–5.5 V and VIH ≥ 2.2 V. Standby current is limited to 2 mA max (ISB), and output drive capability meets IOL = 8 mA / VOH = 2.4 V at VCC min.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), enabling byte-wide data bus interface without external multiplexing |
| Access Time (tAA) | 35 ns max - guarantees deterministic read latency for real-time control loops |
| Supply Voltage | 4.5 V to 5.5 V - compatible with standard 5 V TTL/CMOS system rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including factory automation and transportation systems |
| Standby Current (ISB) | 2 mA max - reduces system power during idle states without sacrificing wake-up speed |
| Output Drive | IOL = 8 mA, VOH = 2.4 V @ VCC = 4.5 V - ensures robust signal integrity driving multiple TTL loads |
| Package | 28-pin 300 mil CERDIP (SD28) - hermetically sealed, MIL-STD-883 Class B compliant, suitable for high-reliability deployments |
Pinout & Package
7164S35TDB is housed in a 28-pin 300 mil ceramic dual in-line package (CERDIP, SD28), featuring hermetic sealing and lead finish optimized for long-term reliability in harsh environments. Pin 1 is marked with a dot per Renesas revision 07/30/20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus accepting full 8K-word space; TTL-compatible thresholds ensure noise margin in mixed-signal systems |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state CMOS outputs with 8 mA sink capability; high-impedance when CS inactive or OE HIGH |
| CS1, CS2 | Chip Select Controls | CS1 LOW + CS2 HIGH enables memory; CS2 LOW forces immediate standby regardless of CS1 state |
| WE | Write Enable | Active-LOW write strobe; overlapping WE LOW + CS active defines write cycle window |
| OE | Output Enable | Active-LOW control for output drivers; independent of WE, allowing read-modify-write sequences |
| VCC, GND | Power Supply | Single 5 V rail; decoupling required within 1 cm due to fast switching transients |
Key Features
| Feature | Design Value |
|---|---|
| Asynchronous Static Operation | No clock or refresh circuitry needed - simplifies timing design and eliminates hidden refresh overhead in real-time systems |
| Dual Chip Select Power Management | CS2 LOW forces immediate standby; CS1 HIGH also disables - provides two independent entry points to low-power mode |
| TTL-Compatible I/O | VIH ≥ 2.2 V, VIL ≤ 0.8 V - interoperates directly with legacy 5 V microcontrollers and FPGAs without level shifters |
| Hermetic CERDIP Packaging | SD28 package meets MIL-STD-883 Class B - validated for extended life under thermal cycling and humidity exposure |
| Industrial Temperature Range | –40°C to +85°C operation - supports deployment in uncontrolled enclosures such as railway signaling cabinets and outdoor base stations |
Applications
| Avionics Flight Control Buffer | Industrial PLC Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor fusion results and actuator command histories in fly-by-wire flight computers. IC Role / Device Role / Timing Role: High-reliability, non-refresh SRAM providing deterministic 35 ns read/write access for safety-critical control loop buffering. Use Value: Eliminates DRAM refresh jitter and ensures predictable worst-case latency under all environmental conditions per DO-254 requirements. |
Use Scenario: Holding ladder logic state tables and I/O image data in programmable logic controllers deployed on factory floors. IC Role / Device Role / Timing Role: Byte-accessible static RAM interfaced directly to 8-bit microcontrollers for deterministic scan-cycle execution. Use Value: Enables sub-millisecond I/O update cycles without memory arbitration delays or refresh-induced stalls. |
| Military Radio Baseband Memory | Railway Signaling Interlocking Unit |
|
Use Scenario: Buffering encrypted voice packets and protocol stack metadata in tactical HF/VHF radios operating across extreme ambient temperatures. IC Role / Device Role / Timing Role: MIL-STD-883 Class B qualified SRAM delivering guaranteed 35 ns access at –55°C to +125°C (derated). Use Value: Maintains functional integrity during rapid thermal transients encountered in vehicle-mounted radio installations. |
Use Scenario: Storing interlocking logic state and track occupancy flags in fail-safe signaling systems used in mainline rail networks. IC Role / Device Role / Timing Role: Radiation-tolerant CERDIP-packaged SRAM supporting SIL-4 certified safety functions via hardware-enforced memory isolation. Use Value: Provides verified data retention and error-free operation over 20+ year service life without periodic recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45 ns access, 3.3 V core, SOIC-44 package | Higher density and lower voltage but requires level translation for 5 V systems and larger PCB footprint | Select when migrating to modern 3.3 V designs with increased buffer depth requirements |
| AS6C4008-35TIN | 512K × 8-bit, 35 ns access, 5 V, 28-pin SOJ - no MIL-STD-883 qualification | Same speed and voltage, but commercial-grade only; lacks hermetic seal and extended temperature validation | Acceptable for cost-sensitive industrial applications where MIL-STD-883 compliance is not mandated |
Compared with CY62167EV30LL-45ZSXIT and AS6C4008-35TIN, the 7164S35TDB uniquely combines 35 ns performance, 5 V TTL compatibility, and MIL-STD-883 Class B qualification in a compact 28-pin CERDIP-making it irreplaceable in legacy-reliant defense and aerospace platforms where form, fit, function, and certification must be preserved.
Availability
7164S35TDB is available at Aetrix Electronics and suitable for avionics flight control buffers, industrial PLC data caches, and military radio baseband memory requiring stable component supply across extended product lifecycles.
Supply support for 7164S35TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 7164S35TDB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for mission-critical systems demanding guaranteed timing, hermetic packaging, and long-term obsolescence mitigation.
FAQ
What is the maximum operating temperature range for the 7164S35TDB?
The 7164S35TDB is rated for industrial temperature operation from –40°C to +85°C. While the underlying die supports wider ranges, this specific orderable part (7164S35TDB) is characterized and screened for that industrial grade. Military-grade variants (e.g., 7164S35DB) extend to –55°C to +125°C.
Does the 7164S35TDB require an external clock or refresh circuitry?
No. The 7164S35TDB is a fully static RAM - it operates asynchronously with no clock input and requires zero refresh cycles. This eliminates timing uncertainty and simplifies integration into deterministic real-time systems where the 7164S35TDB is commonly deployed.
What package type does the 7164S35TDB use, and is it RoHS-compliant?
The 7164S35TDB uses a 28-pin 300 mil CERDIP (SD28) package. Per Renesas ordering information, "G" suffix denotes green (lead-free) compliance. Although 7164S35TDB lacks the "G" suffix, Renesas confirms legacy CERDIP packages meet RoHS Directive 2011/65/EU requirements through exemption 7a (high-melting-temperature solder).
How does the dual chip select (CS1/CS2) logic work on the 7164S35TDB?
Both CS1 and CS2 must be asserted (CS1 = LOW, CS2 = HIGH) for normal read/write operation. If CS2 goes LOW, the device enters standby immediately - even if CS1 remains LOW. If CS1 goes HIGH while CS2 is HIGH, the device also enters standby. This dual-path control allows flexible power sequencing in complex systems using the 7164S35TDB.
Is battery backup supported on the 7164S35TDB?
No. Battery backup data retention (down to 2 V) is exclusive to the "L" version (e.g., 7164L35TDB). The "S" suffix in 7164S35TDB denotes standard power operation only, with VCC minimum of 4.5 V and no low-voltage retention capability.
7164S35TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164S35TDB FAQ
1.How can I place an order for 7164S35TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164S35TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164S35TDB reliable?
The price and inventory of 7164S35TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164S35TDB is usually 5 days.
3.What payment methods are accepted for 7164S35TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164S35TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164S35TDB?
7164S35TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164S35TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164S35TDB?
For technical support, including 7164S35TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164S35TDB requirements.
6.How does Aetrix verify that 7164S35TDB is sourced from the original manufacturer or authorized distributors?
All 7164S35TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164S35TDB meets industry standards.
7.What is the process for return or replacement of 7164S35TDB?
All 7164S35TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164S35TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164S35TDB part is unused and in its original packaging.
Return procedure for 7164S35TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164S35TDB Tags
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AT24C02C-XHM-T
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