Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 7164S55TDB

Part No.:
7164S55TDB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.300", 7.62mm)
Datasheet:
Aetrix7164S55TDB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,311

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

7164S55TDB from Renesas Electronics is a 64K (8K × 8-bit) high-speed CMOS static RAM with 55 ns maximum address access time, TTL-compatible I/O, three-state outputs, and industrial temperature support (–40°C to +85°C). It operates from a single 5V supply and features automatic low-power standby mode triggered by chip select logic - used in real-time data buffering for avionics control units, industrial PLCs, and military communication subsystems.

For engineers reviewing the 7164S55TDB datasheet, 7164S55TDB pinout, 7164S55TDB application, or 7164S55TDB equivalent, key selection criteria include verified 55 ns read cycle timing, CS1/CS2 dual-select power-down behavior, SOJ-28 package compatibility, and MIL-STD-883 Class B compliance for ruggedized embedded memory designs.

Technical Context

The 7164S55TDB implements fully static asynchronous architecture-no clocks or refresh required-and uses dual chip select (CS1 active-low, CS2 active-high) to enable precise power gating. Standby current drops to 2 mA max at 55 ns speed grade under industrial conditions.

Its input/output structure supports direct TTL interfacing with VIH ≥ 2.2 V and VIL ≤ 0.8 V, while output drivers deliver VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA. Data retention is not supported (L-version only), confirming this as the standard-power S-variant.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 8K × 8-bit (65,536 bits), enabling byte-wide parallel data access without external multiplexing
Access Time (tAA) 55 ns max - guarantees deterministic read latency for 18 MHz bus timing in legacy microcontroller systems
Supply Voltage 5.0 V ±10% - compatible with standard TTL/CMOS logic rails and eliminates need for voltage regulation
Operating Temperature –40°C to +85°C - qualified for industrial environments including factory automation and transportation electronics
Package Type 28-pin SOJ (SD28 code), 300-mil width - surface-mount compatible with wave/reflow assembly and legacy PCB footprints
Power Dissipation 1.0 W max - meets thermal constraints of dense embedded modules without forced cooling
Input/Output Compatibility TTL-compatible inputs and three-state outputs - simplifies interface to 80Cxx, Z80, and 68K-family processors

Pinout & Package

7164S55TDB is housed in a 28-pin Small Outline J-Lead (SOJ) package (SD28 code), 300-mil body width, with gull-wing leads suitable for automated SMT placement and reflow soldering.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs 13-bit address bus accepting full 8K-word range; no internal latching - requires stable address during CS assertion
I/O0–I/O7 Bidirectional Data Bus Three-state CMOS I/O pins; high-impedance when CS inactive or OE high - enables shared bus topology
CS1 Chip Select 1 Active-low primary enable; device enters standby if CS1 = HIGH, regardless of CS2 state
CS2 Chip Select 2 Active-high secondary enable; CS2 = LOW forces standby even if CS1 is active - provides hierarchical power control
WE Write Enable Active-low write strobe; controls data flow direction on I/O lines during write cycles with CS1/CS2 asserted
OE Output Enable Active-low output gate; disables output drivers when HIGH - essential for bus contention avoidance
VCC Power Supply +5 V supply pin; decoupling capacitor required within 10 mm to suppress switching noise on shared rail
GND Ground Signal reference plane; must be connected to low-impedance ground plane to maintain noise margin
NC No Connect Pin 13 is unconnected - must remain floating; no routing or grounding permitted

Key Features

Feature Design Value
High-speed access 55 ns max tAA ensures compatibility with 18 MHz system clocks in legacy 8-bit and 16-bit microprocessor designs
Dual chip select power management Independent CS1 (active-low) and CS2 (active-high) allow flexible power sequencing and multi-chip memory banking
TTL-compatible I/O Eliminates level-shifting components when interfacing with 8085, Z80, 68000, and similar controllers
Three-state outputs Enables direct connection to shared data buses without external bus transceivers
MIL-STD-883 Class B compliance Validated for military-grade reliability including burn-in, hermeticity, and radiation tolerance testing

Applications

Avionics Data Buffering Industrial PLC Memory Expansion

Use Scenario: Real-time sensor data capture and temporary storage in flight control computers where deterministic latency is critical.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state read/write access for ADC sample buffering and command queueing.

Use Value: 55 ns tAA ensures sub-60 ns response to interrupt-driven data writes, meeting DO-254 timing budgets for Level A systems.

Use Scenario: Adding local program/data memory to programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Non-refreshing memory module supporting ladder logic execution and I/O image updates at 10 ms scan rates.

Use Value: –40°C to +85°C rating and 1.0 W power envelope allow operation inside sealed enclosures without derating.

Military Radio Baseband Processing Legacy Test Equipment Memory Upgrade

Use Scenario: Storing intermediate FFT coefficients and channel equalization tables in software-defined radios deployed in field units.

IC Role / Device Role / Timing Role: High-reliability SRAM used in signal processing pipelines requiring guaranteed data integrity across temperature extremes.

Use Value: MIL-STD-883 Class B qualification ensures survivability under shock, vibration, and thermal cycling per MIL-STD-810G.

Use Scenario: Replacing obsolete memory in aging semiconductor ATE platforms where footprint and timing must match original design.

IC Role / Device Role / Timing Role: Pin-identical drop-in replacement for legacy 7164-series sockets in boundary-scan controller boards.

Use Value: SD28 SOJ package matches original 300-mil SOJ footprint; 55 ns timing satisfies existing test pattern generator timing margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-55ZSXIT 4-Mbit (512K × 8) density, 3.3 V core, 55 ns access, TSOP-44 package Higher density and lower voltage but incompatible pinout and supply - requires PCB redesign Select only if upgrading capacity and migrating to 3.3 V systems; not a drop-in replacement
AS6C8008-55ZIN 64K × 8, 55 ns, 5 V, SOJ-28, industrial temp - functionally identical but manufactured by Alliance Memory Same pinout, timing, and voltage; fully compliant with original IDT spec sheet parameters Preferred for second-source continuity where Renesas supply is constrained; validated for same use cases

Compared with CY62167EV30LL-55ZSXIT, the 7164S55TDB offers proven 5 V interoperability and legacy footprint compatibility; compared with AS6C8008-55ZIN, it provides identical functionality with Renesas' long-term military qualification history and traceable lot documentation.

Availability

7164S55TDB is available at Aetrix Electronics and suitable for avionics data buffering, industrial PLC memory expansion, military radio baseband processing, and legacy test equipment memory upgrades requiring stable component supply across extended product lifecycles.

Supply support for 7164S55TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 7164S55TDB belongs to Renesas' legacy high-reliability SRAM product line, originally developed by IDT and optimized for deterministic, non-volatile-critical memory tasks in mission-critical embedded systems.

FAQ

What is the maximum operating temperature range for the 7164S55TDB?

The 7164S55TDB is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the "Recommended Operating Temperature and Supply Voltage" table (2967 tbl 03) and applies specifically to the S-variant in SD28 SOJ packaging. It does not support military-grade –55°C to +125°C operation - that requires the L-variant or CD28 CERDIP package variants.

Does the 7164S55TDB support battery backup or data retention below 5 V?

No, the 7164S55TDB does not support low-voltage data retention. Only the L-version (e.g., 7164L55TDB) specifies 2 V data retention capability per Table 10 (2967 tbl 10). The "S" in 7164S55TDB denotes standard power, and its DC characteristics table (2967 tbl 09) omits VDR and ICCDR parameters - confirming absence of retention mode.

Is the 7164S55TDB pin-compatible with other 7164-series variants like the 7164L55TDB?

Yes, the 7164S55TDB is pin-compatible with the 7164L55TDB in the same SD28 SOJ package - both share identical pin configuration, signal names, and physical layout per Figure 2 (2967 drw 02). However, functional differences exist: the L-variant adds data retention at 2 V and reduces standby current, while the S-variant prioritizes standard-speed performance without retention circuitry.

What is the meaning of "TDB" in the part number 7164S55TDB?

In the ordering nomenclature, "TDB" indicates the SD28 package code: "T" = tape-and-reel packaging, "D" = SOJ, "B" = 300-mil width. This is defined in the "Ordering Information" section (2967 drw 11) and confirmed in the Orderable Part Information table (page 10), where 7164S55TDB maps directly to SD28 - a 28-pin, 300-mil Small Outline J-Lead package.

Can the 7164S55TDB be used in new designs despite its legacy status?

Yes - although originally introduced by IDT and now rebranded by Renesas, the 7164S55TDB remains actively supported with documented availability, full datasheet revision history through July 2020, and ongoing distribution via authorized channels. Its industrial temperature rating, MIL-STD-883 qualification, and proven reliability make it suitable for long-lifecycle embedded programs where obsolescence risk is mitigated by Aetrix's continuity planning.

7164S55TDB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164S55TDB FAQ

1.How can I place an order for 7164S55TDB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164S55TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164S55TDB reliable?

The price and inventory of 7164S55TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164S55TDB is usually 5 days.

3.What payment methods are accepted for 7164S55TDB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164S55TDB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164S55TDB?

7164S55TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164S55TDB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164S55TDB?

For technical support, including 7164S55TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164S55TDB requirements.

6.How does Aetrix verify that 7164S55TDB is sourced from the original manufacturer or authorized distributors?

All 7164S55TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164S55TDB meets industry standards.

7.What is the process for return or replacement of 7164S55TDB?

All 7164S55TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164S55TDB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164S55TDB part is unused and in its original packaging.

Return procedure for 7164S55TDB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

7164S55TDB Tags

  • 7164S55TDB
  • 7164S55TDB PDF
  • 7164S55TDB Datasheet
  • 7164S55TDB Specifications
  • 7164S55TDB Images
  • Renesas
  • Renesas 7164S55TDB
  • Buy 7164S55TDB
  • 7164S55TDB Price
  • 7164S55TDB Distributor
  • 7164S55TDB Supplier
  • 7164S55TDB Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER