Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71T75602S133PFGI

Part No.:
71T75602S133PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75602S133PFGI.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,903

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71T75602S133PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs - deployed in high-speed network packet buffers and telecom line cards.

For engineers reviewing the 71T75602S133PFGI datasheet, 71T75602S133PFGI pinout, 71T75602S133PFGI application, or 71T75602S133PFGI equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), JTAG IEEE 1149.1 compliance, industrial temperature range (–40°C to +85°C), and TQFP-100 packaging.

Technical Context

The 71T75602S133PFGI implements a fully synchronous, rising-edge-triggered interface with registered address, data, and control paths. Its internal burst counter enables 4-word interleaved or linear bursts initiated by ADV/LD, while LBO selects burst order statically.

ZBT™ operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and single R/W control. The device supports depth expansion using three chip enables (CE1, CE2, CE2) and retains data in ZZ sleep mode with gated clock and guaranteed retention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18,874,368-bit capacity); supports high-bandwidth parallel data paths in networking ASIC interfaces
Clock Frequency200 MHz maximum - enables 5 ns cycle time for sustained burst transfers in real-time packet processing
Access Time3.2 ns clock-to-data (tCD) - ensures deterministic latency for pipelined read operations two cycles after address load
Supply VoltageVDD = 2.5 V ±5%, VDDQ = 2.5 V ±5% - dual-rail I/O/core supply enables clean signal integrity and low-noise operation
Burst Capability4-word burst (linear or interleaved) - reduces address bus traffic and improves throughput in sequential memory access patterns
Operating Temperature–40°C to +85°C - qualified for industrial-grade deployment in base station and router environments
Power ManagementZZ input enables synchronous sleep mode with clock gating and data retention - cuts dynamic power during idle periods

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per PKG100 configuration for 512K × 36 mode.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLKSystem Clock InputRising-edge-triggered master timing reference; all synchronous registers (address, control, I/O) align to this edge
R/WRead/Write ControlSingle synchronous signal defining cycle type; determines data direction two cycles later
ADV/LDBurst Counter ControlHIGH advances internal burst counter; LOW loads new external address - enables seamless burst chaining
BW1–BW4Byte Write EnablesFour independent active-low signals controlling 9-bit byte writes; allows partial-word updates without masking logic
CE1, CE2, CE2Chip Enable InputsThree synchronous enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and deselect sequencing
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations in high-speed designs
OEOutput EnableAsynchronous control; tri-states outputs immediately when HIGH - simplifies bus sharing without timing constraints
LBOBurst Order SelectStatic input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) burst sequence - configures memory access pattern at power-up
JTAG Pins (TMS, TDI, TCK, TDO)Boundary Scan InterfaceIEEE 1149.1-compliant test access port; supports production testing and board-level diagnostics
ZZSleep Mode InputActive-HIGH synchronous entry into low-power state; gates internal clock while preserving memory contents

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates bus turnaround dead cycles between reads and writes - increases effective bandwidth in mixed-access workloads
Pipelined OutputsInternally synchronized OE eliminates need for external OE timing control - simplifies PCB layout and timing closure
4-Word Burst ModeReduces address bus activity by 75% per burst - lowers system-level power and routing congestion in burst-oriented applications
Individual Byte WriteEnables precise 9-bit sub-word updates without read-modify-write - critical for protocol header manipulation in packet processors
JTAG Boundary ScanSupports IEEE 1149.1 test infrastructure - enables automated manufacturing test and field diagnostic capability

Applications

Network Packet BufferTelecom Line Card

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM buffer interfacing directly with MAC and switch fabric controllers.

Use Value: 200 MHz operation and 3.2 ns tCD enable real-time packet buffering with sub-10 ns deterministic access - meeting strict jitter budgets in carrier-grade systems.

Use Scenario: Temporary storage of voice frames and signaling data in TDM-over-IP gateways.

IC Role / Device Role / Timing Role: Synchronous burst-capable memory supporting time-slot interchange and echo cancellation algorithms.

Use Value: 4-word burst mode and zero bus turnaround reduce bus arbitration overhead - improving channel density and reducing per-channel memory latency.

Base Station BasebandRadar Signal Processing

Use Scenario: Intermediate storage for OFDMA symbol processing and channel estimation in LTE/5G eNodeB units.

IC Role / Device Role / Timing Role: Low-power, industrial-temperature SRAM used in FPGA-based digital front-end subsystems.

Use Value: ZZ sleep mode and –40°C to +85°C rating ensure reliable operation during thermal cycling in outdoor macrocells.

Use Scenario: Real-time buffering of ADC samples and FFT intermediate results in pulsed radar receivers.

IC Role / Device Role / Timing Role: Pipelined, registered SRAM providing glitch-free data capture synchronized to high-speed sampling clocks.

Use Value: Registered I/O and 200 MHz clocking support >1 Gbps sustained throughput - matching wideband ADC output rates without FIFO bottlenecks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV181M × 18 organization, 165 MHz max, 2.5V core/I/O, no JTAG, different pinoutLower density, no burst counter or ZBT™ architecture - requires external logic for burst handlingChoose when 1M × 18 width matches system bus and JTAG is unnecessary
AS7C331024B1M × 36 organization, 166 MHz, 3.3V supply, asynchronous OE, no burst or ZBT™Higher voltage, no pipelining or zero-turnaround - introduces timing margin challenges in 200 MHz designsConsider only for legacy 3.3V systems where upgrade to 2.5V ZBT™ is not feasible

Compared with CY7C1315KV18 and AS7C331024B, the 71T75602S133PFGI delivers higher bandwidth via ZBT™ and burst pipelining, supports industrial temperature operation, and integrates JTAG - making it optimal for new high-speed telecom and defense designs requiring deterministic latency and testability.

Availability

71T75602S133PFGI is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71T75602S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71T75602S133PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput packet-processing and baseband subsystems.

FAQ

What is the memory organization and total capacity of the 71T75602S133PFGI?

The 71T75602S133PFGI is configured as 512K × 36 bits, delivering 18,874,368 total bits (18 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data paths ideal for wide-bus applications such as network processors and DSP co-processors. It does not support 1M × 18 mode - that configuration applies to the pin-compatible 71T75802 variant.

Does the 71T75602S133PFGI support burst read and write operations?

Yes, the 71T75602S133PFGI supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode is initiated by asserting ADV/LD = HIGH after an initial address load, and the internal counter advances automatically - enabling efficient sequential access without repeated address setup.

What package type and pin count does the 71T75602S133PFGI use?

The 71T75602S133PFGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm lead pitch. This PKG100 footprint is explicitly documented for the 512K × 36 configuration and includes dedicated pins for JTAG, byte write enables, and burst control signals.

How does the ZBTTM feature improve system performance in the 71T75602S133PFGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75602S133PFGI eliminates idle cycles when switching between read and write operations. By synchronizing output buffer enable internally and using a single R/W pin, the device achieves back-to-back access - increasing effective bus utilization by up to 30% in mixed-access memory workloads typical in packet buffering.

Is the 71T75602S133PFGI compatible with industrial temperature requirements?

Yes, the 71T75602S133PFGI is rated for industrial temperature operation from –40°C to +85°C, as confirmed in the Absolute Maximum Ratings and Recommended Operating Conditions tables. This qualification makes it suitable for deployment in outdoor telecom equipment, industrial automation controllers, and defense electronics where ambient thermal stability is critical.

71T75602S133PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71T75602S133PFGI FAQ

1.How can I place an order for 71T75602S133PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75602S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75602S133PFGI reliable?

The price and inventory of 71T75602S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75602S133PFGI is usually 5 days.

3.What payment methods are accepted for 71T75602S133PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75602S133PFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75602S133PFGI?

71T75602S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75602S133PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75602S133PFGI?

For technical support, including 71T75602S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75602S133PFGI requirements.

6.How does Aetrix verify that 71T75602S133PFGI is sourced from the original manufacturer or authorized distributors?

All 71T75602S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75602S133PFGI meets industry standards.

7.What is the process for return or replacement of 71T75602S133PFGI?

All 71T75602S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71T75602S133PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75602S133PFGI part is unused and in its original packaging.

Return procedure for 71T75602S133PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71T75602S133PFGI Tags

  • 71T75602S133PFGI
  • 71T75602S133PFGI PDF
  • 71T75602S133PFGI Datasheet
  • 71T75602S133PFGI Specifications
  • 71T75602S133PFGI Images
  • Renesas
  • Renesas 71T75602S133PFGI
  • Buy 71T75602S133PFGI
  • 71T75602S133PFGI Price
  • 71T75602S133PFGI Distributor
  • 71T75602S133PFGI Supplier
  • 71T75602S133PFGI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER