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Renesas 71T75602S150PFG

Part No.:
71T75602S150PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75602S150PFG.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,621

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Product details

Overview

71T75602S150PFG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It serves as a high-bandwidth buffer in network packet processors and telecom line cards requiring pipelined burst reads/writes.

For engineers reviewing the 71T75602S150PFG datasheet, 71T75602S150PFG pinout, 71T75602S150PFG application, or 71T75602S150PFG equivalent, key selection criteria include ZBT™ burst timing compliance, 2.5V I/O supply (VDDQ) decoupling requirements, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 test interface validation for production testability.

Technical Context

The 71T75602S150PFG implements a fully synchronous, pipelined architecture with positive-edge-triggered address/control/data registers. Its on-chip burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD determines whether external addresses are loaded or internal counters advanced.

ZBT™ operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable-removing need for OE timing control-and uses three chip enables (CE1/CE2/CE2) with two-cycle deselect latency. Sleep mode is entered synchronously via high-ZZ input, guaranteeing data retention at minimal power.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18,874,368-bit capacity); supports 1M × 18-bit configuration via pin strapping
Clock Frequency200 MHz maximum; enables 3.2 ns clock-to-data access for real-time buffering in high-speed data paths
Supply VoltagesVDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); separate supplies allow independent noise management
Burst Capability4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns
Operating Temperature–40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments
JTAG InterfaceIEEE 1149.1-compliant boundary scan; enables in-system test and debug without external probes
Power-Down ModeSynchronous entry via ZZ pin; gates internal clock and reduces active power while retaining memory contents

Pinout & Package

71T75602S150PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is marked by dot or notch; package is RoHS-compliant and green (halogen-free).

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLKClock InputPrimary timing reference; all synchronous inputs and outputs referenced to rising edge
R/WRead/Write ControlSynchronous signal defining cycle type; data transfer occurs two clocks later
ADV/LDBurst Counter ControlLOW loads new external address; HIGH advances internal burst counter
LBOBurst Order SelectLOW = linear sequence (0,1,2,3); HIGH = interleaved (0,2,1,3); static during operation
CE1, CE2, CE2Chip EnablesThree-input enable logic: CE1=LOW, CE2=LOW, CE2=HIGH selects device; any violation initiates 2-cycle deselect
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes; allows partial-word updates without read-modify-write
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous bus; registered inputs/outputs eliminate external latch requirements
ZZSleep Mode InputHIGH enters low-power sleep; internal clock gated while memory contents retained
TMS/TDI/TCK/TDO/TRSTJTAG Test InterfaceIEEE 1149.1 boundary scan chain; TRST optional asynchronous reset (BGA only; TQFP omits TRST)

Key Features

FeatureDesign Value
ZBTTM Zero Bus TurnaroundEliminates dead cycles between read/write transitions-enabling continuous bus utilization in full-duplex data pipelines
Pipelined Output Buffer EnableInternally synchronized OE replacement removes critical timing path for output control in high-speed systems
Individual Byte Write (BW1–BW4)Enables selective 9-bit updates without disturbing adjacent bytes-critical for protocol header manipulation
4-Word Burst CounterReduces address bus activity by 75% per burst; supports both linear (streaming) and interleaved (cache-line) access patterns
Three Chip Enables (CE1/CE2/CE2)Allows depth expansion across multiple devices with deterministic 2-cycle deselect latency for predictable bus arbitration

Applications

Network Packet ProcessingTelecom Line Cards

Use Scenario: Storing and forwarding variable-length Ethernet frames in ASIC-based switch fabric buffers.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as frame buffer with ZBT™-enabled back-to-back read/write for cut-through switching.

Use Value: 200 MHz operation and 3.2 ns access reduce frame queuing delay; burst capability aligns with 64-byte cache line transfers.

Use Scenario: Buffering TDM voice channels and signaling packets in multi-service access platforms.

IC Role / Device Role / Timing Role: Synchronous dual-port-like SRAM supporting simultaneous ingress/egress data streams with deterministic timing.

Use Value: Industrial temperature range (–40°C to +85°C) ensures reliability in uncontrolled cabinet environments; JTAG enables field-upgradeable firmware storage verification.

High-Speed Test EquipmentIndustrial PLC Data Logging

Use Scenario: Capturing high-frequency sensor waveforms or digital bus traces in automated test systems.

IC Role / Device Role / Timing Role: Real-time acquisition buffer with burst write capability to capture consecutive samples without CPU intervention.

Use Value: 4-word burst writes minimize address setup overhead; individual byte writes allow metadata tagging of each sample block.

Use Scenario: Cyclic logging of machine state variables (e.g., motor currents, temperatures) in factory automation controllers.

IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM used as fast intermediate log buffer before flash commit.

Use Value: Sleep mode (ZZ) reduces standby power during idle periods; 2.5V I/O compatibility simplifies interface to 3.3V microcontroller GPIOs via level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1305KV18-200BZXI1M × 18-bit organization; no ZBT™ architecture; uses conventional burst with OE-controlled outputsLacks zero bus turnaround-requires additional dead cycles between read/write; lower pin count (100-pin vs. 119-ball BGA variant)Select when system design accommodates traditional burst timing and requires smaller footprint; not drop-in compatible due to different pinout and timing model.
AS7C33128PFS-20BIN32M-bit density (1M × 32); 3.3V core/I/O; no JTAG; no ZZ sleep modeHigher density but incompatible voltage domain; lacks industrial temp rating and boundary scan-unsuitable for telecom test or field-deployed equipmentConsider only for cost-sensitive commercial applications where 3.3V supply and absence of JTAG/test features are acceptable trade-offs.

Compared with CY7C1305KV18-200BZXI and AS7C33128PFS-20BIN, the 71T75602S150PFG delivers deterministic ZBT™ timing for latency-critical buffering, integrated JTAG for production test coverage, and industrial-grade thermal resilience-making it uniquely suited for infrastructure-grade hardware where timing predictability and long-term reliability are non-negotiable.

Availability

71T75602S150PFG is available at Aetrix Electronics and suitable for network packet processing, telecom line cards, and high-speed test equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71T75602S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75602S150PFG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet buffering, baseband processing, and real-time instrumentation applications.

FAQ

What is the memory organization and density of the 71T75602S150PFG?

The 71T75602S150PFG is configured as 512K × 36-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. It supports pin-selectable reconfiguration to 1M × 18-bit mode. This dual-organization flexibility allows system designers to optimize data bus width versus address space based on controller interface constraints without changing the physical component.

Does the 71T75602S150PFG support industrial temperature operation?

Yes, the 71T75602S150PFG is rated for industrial temperature operation from –40°C to +85°C. This specification is validated across all electrical parameters-including 200 MHz timing, ZBT™ burst behavior, and JTAG functionality-and applies to the S150PFG suffix variant, which denotes the industrial-grade 100-pin TQFP package.

How does the ZBTTM feature improve system performance in the 71T75602S150PFG?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75602S150PFG eliminates idle cycles between successive read and write operations. By internally synchronizing output buffer enable and using pipelined registers, the 71T75602S150PFG achieves continuous bus utilization-reducing effective latency by up to one clock cycle per transition compared to conventional synchronous SRAMs.

What is the function of the ADV/LD and LBO pins on the 71T75602S150PFG?

On the 71T75602S150PFG, ADV/LD controls burst counter behavior: sampled LOW at rising CLK, it loads a new external address; sampled HIGH, it advances the internal burst counter. LBO selects burst order-LOW enables linear (0,1,2,3), HIGH enables interleaved (0,2,1,3)-and must remain static during burst execution to prevent undefined addressing.

Can the 71T75602S150PFG be used with a 3.3V system controller?

The 71T75602S150PFG requires 2.5V ±5% for both VDD (core) and VDDQ (I/O). Direct connection to a 3.3V controller violates VIH limits and risks damage. A level-shifting interface-such as dual-supply translators (e.g., TXB0108) or resistor-divider networks with appropriate drive strength-is mandatory to ensure safe, compliant signal translation between 3.3V logic and the 71T75602S150PFG's 2.5V I/O domain.

71T75602S150PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71T75602S150PFG FAQ

1.How can I place an order for 71T75602S150PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75602S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75602S150PFG reliable?

The price and inventory of 71T75602S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75602S150PFG is usually 5 days.

3.What payment methods are accepted for 71T75602S150PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75602S150PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75602S150PFG?

71T75602S150PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75602S150PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75602S150PFG?

For technical support, including 71T75602S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75602S150PFG requirements.

6.How does Aetrix verify that 71T75602S150PFG is sourced from the original manufacturer or authorized distributors?

All 71T75602S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75602S150PFG meets industry standards.

7.What is the process for return or replacement of 71T75602S150PFG?

All 71T75602S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71T75602S150PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75602S150PFG part is unused and in its original packaging.

Return procedure for 71T75602S150PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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