Renesas 71T75602S150PFG8

Overview

71T75602S150PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed, 3.2 ns clock-to-data access, zero bus turnaround architecture, and pipelined burst outputs. It serves as high-bandwidth data buffer in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75602S150PFG8 datasheet, 71T75602S150PFG8 pinout, 71T75602S150PFG8 application, or 71T75602S150PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) support, industrial temperature range (–40°C to +85°C), and JTAG IEEE 1149.1 test interface integration.

Technical Context

The 71T75602S150PFG8 implements a fully synchronous, rising-edge-triggered architecture with registered address, control, and data paths. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD determines whether external addresses are loaded or the counter is advanced.

ZBTTM operation eliminates dead cycles between consecutive reads and writes via internally synchronized output buffer enable and single R/W control. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and includes a dedicated ZZ input for synchronous sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per PKG100 configuration for 512K × 36 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362KV18 and AS7C33128P, the 71T75602S150PFG8 delivers superior burst throughput, lower latency, and built-in testability - making it optimal for next-generation telecom and defense signal processing where timing predictability and debug visibility are mandatory.

Availability

71T75602S150PFG8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and aerospace/defense electronics requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 71T75602S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71T75602S150PFG8 belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for bandwidth-intensive applications demanding zero bus turnaround, deterministic burst timing, and industrial-grade reliability.

FAQ

What is the memory organization and total capacity of the 71T75602S150PFG8?

The 71T75602S150PFG8 is configured as 512K × 36 bits, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. This organization provides a native 36-bit data bus width optimized for packet header and payload buffering in networking ASICs and FPGAs without requiring external data-width expansion logic.

Does the 71T75602S150PFG8 support both linear and interleaved burst modes?

Yes, the 71T75602S150PFG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3). This flexibility accommodates different memory controller architectures and cache line mapping schemes.

What is the function of the ZZ pin on the 71T75602S150PFG8?

The ZZ pin on the 71T75602S150PFG8 is a synchronous sleep mode input. When asserted HIGH, it gates the internal clock and places the device in low-power sleep mode while guaranteeing data retention. Power consumption drops significantly, and the device resumes normal operation synchronously upon ZZ deassertion - no reset sequence is required.

How does the 71T75602S150PFG8 implement Zero Bus Turnaround (ZBTTM)?

The 71T75602S150PFG8 achieves ZBTTM through internally synchronized output buffer enable and a single R/W control pin. Unlike conventional SRAMs, it eliminates dead cycles between read and write operations by overlapping bus direction control with data transfer timing - enabling back-to-back read/write bursts at full 200 MHz clock rate without external arbitration.

Is the 71T75602S150PFG8 compatible with industrial temperature requirements?

Yes, the 71T75602S150PFG8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly confirmed in the datasheet's Recommended Operating Conditions table and Absolute Maximum Ratings section, making it suitable for deployment in uncooled telecom chassis, factory automation controllers, and outdoor wireless infrastructure.