Renesas 71T75602S150PFGI

Overview

71T75602S150PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75602S150PFGI datasheet, 71T75602S150PFGI pinout, 71T75602S150PFGI application, or 71T75602S150PFGI equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 2.5V I/O supply (VDDQ), and JTAG IEEE 1149.1 test interface integration.

Technical Context

The 71T75602S150PFGI implements a fully synchronous, clock-edge-triggered architecture with input/output registers aligned to the rising edge of CLK. Its ZBT™ core eliminates dead cycles between consecutive reads and writes via internal burst counter control and ADV/LD-driven address loading or incrementing.

Burst sequencing is selectable via static LBO pin (linear or interleaved), and output enable (OE) operates asynchronously while all other controls-including R/W, CEN, CE1/CE2/CE2, BW1–BW4, and ZZ-are synchronous. The device supports 4-word bursts and integrates boundary-scan JTAG for production testability.

Key Specifications

Pinout & Package

71T75602S150PFGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI suffix). Pinout validated per IDT document 5313 drw 02r for 512K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33 and AS7C331024B, the 71T75602S150PFGI delivers deterministic 3.2 ns access, true ZBT™ operation, and integrated JTAG-making it uniquely suited for high-performance, testable, industrial-grade synchronous buffering where voltage, timing, and debugability are co-constrained.

Availability

71T75602S150PFGI is available at Aetrix Electronics and suitable for packet switching infrastructure, 4G/5G radio units, and industrial motion control systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for 71T75602S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71T75602S150PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency, burst-capable buffering in network processors, switch fabric controllers, and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the memory organization and density of the 71T75602S150PFGI?

The 71T75602S150PFGI is configured as 512K × 36 bits, delivering 18,874,368 bits (18 Mbit) of high-speed synchronous SRAM. This organization is fixed for the 71T75602 variant and differs from the 1M × 18 configuration of the 71T75802. The 36-bit data bus supports byte-selectable writes via BW1–BW4, enabling efficient partial-word updates without read-modify-write overhead.

Does the 71T75602S150PFGI support both linear and interleaved burst modes?

Yes, the 71T75602S150PFGI supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear bursts (e.g., A0→A1→A2→A3); when LBO = HIGH, it uses interleaved order (e.g., A0→A2→A1→A3). This flexibility allows optimization for cache line alignment or specific DMA engine addressing patterns in the host system.

What is the role of the ADV/LD pin in the 71T75602S150PFGI?

The ADV/LD pin determines whether the 71T75602S150PFGI loads a new external address (ADV/LD = LOW) or advances its internal burst counter (ADV/LD = HIGH) on the rising edge of CLK. During burst operations, sampling ADV/LD HIGH increments the counter automatically, eliminating address bus toggling for subsequent words-reducing signal integrity stress and simplifying controller logic.

How does the ZBTTM feature improve system performance in the 71T75602S150PFGI?

ZBTTM (Zero Bus Turnaround) in the 71T75602S150PFGI eliminates mandatory idle cycles between alternating read and write operations. Unlike conventional synchronous SRAMs that require bus release/reacquisition, the 71T75602S150PFGI permits immediate transition-for example, a write cycle can be followed directly by a read cycle on the next clock edge-increasing effective bandwidth in burst-intensive applications like packet forwarding engines.

Is the 71T75602S150PFGI compatible with industrial temperature environments?

Yes, the 71T75602S150PFGI is qualified for industrial temperature operation from –40°C to +85°C, as confirmed by its PFGI suffix and documentation in IDT's 5313 datasheet revision 6.42. This rating ensures reliable timing, data retention, and electrical performance across extended thermal ranges typical of factory automation, outdoor telecom equipment, and transportation electronics-without derating or thermal throttling.