Renesas 71T75602S150PFGI8

Overview

71T75602S150PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and 4-word burst capability. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75602S150PFGI8 datasheet, 71T75602S150PFGI8 pinout, 71T75602S150PFGI8 application, or 71T75602S150PFGI8 equivalent, key selection considerations include ZBT™ burst timing compliance, TQFP-100 industrial-grade packaging, 2.5V I/O supply (VDDQ), JTAG IEEE 1149.1 test interface, and byte-write control for partial-word updates in real-time data path systems.

Technical Context

The 71T75602S150PFGI8 implements a fully synchronous, clock-edge-triggered architecture with input/output registers aligned to the rising CLK edge. Its ZBT™ mode eliminates dead cycles between consecutive reads and writes by internally managing bus direction without external OE control.

Burst addressing is managed via ADV/LD and LBO pins: ADV/LD selects between loading a new external address (low) or incrementing the internal counter (high); LBO configures linear or interleaved 4-word sequences. The device supports depth expansion using three chip enables (CE1, CE2 active-low; CE2 active-high) and individual byte write (BW1–BW4) for 9-bit subword writes.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Industrial temperature grade (–40°C to +85°C) and green RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71T75602S150PFGI8, the 71T75802S150PFGI8 offers identical performance in an alternate word-width configuration, while the CY7C1315KV18-200BZXC delivers higher peak bandwidth via QDR-IV but requires redesign of clocking, control, and data routing - making it suitable only for new QDR-based designs.

Availability

71T75602S150PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71T75602S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75602S150PFGI8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency, high-bandwidth data buffering in telecom switching, enterprise networking, and real-time industrial control systems.

FAQ

What is the memory organization and total capacity of the 71T75602S150PFGI8?

The 71T75602S150PFGI8 is organized as 512K × 36 bits, delivering a total capacity of 18,874,368 bits (18 Mbit). It uses 19 address lines (A0–A18) and provides a 36-bit bidirectional data bus comprising I/O0–I/O31 and I/OP1–I/OP4. This configuration supports high-throughput parallel data paths common in packet processing and digital signal applications.

Does the 71T75602S150PFGI8 support burst read and write operations?

Yes, the 71T75602S150PFGI8 supports 4-word burst operations in both linear and interleaved sequences, selected via the LBO pin. Burst mode is initiated by asserting ADV/LD = HIGH after an initial address load, allowing automatic internal address incrementing. Each burst cycle completes in four clock periods, reducing external address bus activity and improving effective bandwidth in streaming workloads.

What is the function of the ZZ pin on the 71T75602S150PFGI8?

On the 71T75602S150PFGI8, the ZZ pin is the synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in its lowest power-consumption state while maintaining full data retention. This feature is essential for power-sensitive applications such as portable telecom equipment and fanless industrial controllers where thermal management is critical.

Can the 71T75602S150PFGI8 operate with different supply voltages for core and I/O?

Yes, the 71T75602S150PFGI8 uses separate supplies: VDD (2.5 V ±5%) powers the core logic, and VDDQ (2.5 V ±5%) powers the I/O circuitry. This dual-rail architecture isolates switching noise on the data bus from sensitive internal registers, improving signal integrity and timing margin in mixed-signal systems. Both rails must remain within specification simultaneously for guaranteed operation.

Is JTAG boundary scan supported on the 71T75602S150PFGI8, and which pins are used?

Yes, the 71T75602S150PFGI8 includes IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (available in BGA packages only) implement the test access port. In the TQFP-100 package (used by 71T75602S150PFGI8), TMS/TDI/TCK/TDO are assigned to pins 38/39/43/42 respectively, enabling production test and interconnect verification without physical probe access.