Renesas 71T75602S166BG

Overview

71T75602S166BG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and 4-word burst capability. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75602S166BG datasheet, 71T75602S166BG pinout, 71T75602S166BG application, or 71T75602S166BG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) decoupling requirements, and JTAG IEEE 1149.1 test interface support for production validation.

Technical Context

The 71T75602S166BG implements a fully synchronous, clock-edge-triggered architecture with input/output registers aligned to the rising edge of CLK. Its ZBT™ feature eliminates dead cycles between consecutive reads and writes by internally synchronizing output buffer enable-removing external OE control dependency.

Burst sequencing is managed via an on-chip counter driven by ADV/LD and LBO inputs, supporting both linear and interleaved 4-word bursts. Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion, while CEN suspends all synchronous operations without affecting register state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5313 drw 02r (PKG100, 512K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1305KV18-200BZI and AS7C33128P-20TIN, the 71T75602S166BG delivers superior deterministic latency via ZBTTM and burst pipelining, supports JTAG for production test, and maintains strict 2.5V I/O compatibility-making it optimal for new high-speed telecom and networking designs where timing predictability and test coverage are mandatory.

Availability

71T75602S166BG is available at Aetrix Electronics and suitable for packet buffering in network switches, frame storage in telecom line cards, and cache memory in network processors requiring stable component supply across extended industrial temperature ranges.

Supply support for 71T75602S166BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75602S166BG belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, telecom transport, and real-time embedded control applications.

FAQ

What is the memory organization and total capacity of the 71T75602S166BG?

The 71T75602S166BG is configured as 512K × 36-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. This organization supports 36-bit data buses common in network processors and telecom ASICs, with dedicated I/OP1–I/OP4 pins for parity or extended addressing. The device does not support 1M × 18-bit mode-this is implemented in the pin-compatible 71T75802 variant.

Does the 71T75602S166BG support true zero bus turnaround (ZBTTM) between read and write operations?

Yes, the 71T75602S166BG implements ZBTTM (Zero Bus Turnaround) as a core architectural feature. It eliminates dead cycles between consecutive read and write bursts by internally managing output buffer enable timing-no external OE control is needed. This enables uninterrupted 200 MHz data flow, verified in functional timing diagrams and truth tables in the official datasheet (IDT doc #5313).

What package type and pin count does the 71T75602S166BG use, and is it RoHS-compliant?

The 71T75602S166BG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. The "BG" suffix confirms the green (halogen-free, RoHS-compliant) packaging variant. Pinout matches IDT drawing 5313 drw 02r for the 512K×36 configuration, including dedicated I/OP1–I/OP4 parity pins and JTAG TMS/TDI/TCK/TDO on pins 38–43.

How does the burst counter operate in the 71T75602S166BG, and what controls burst order?

The 71T75602S166BG contains an on-chip burst counter controlled by ADV/LD and LBO. When ADV/LD = HIGH, the counter increments; when ADV/LD = LOW, a new external address loads. LBO selects burst order: LOW = linear (A0→A1→A2→A3); HIGH = interleaved (A0→A2→A1→A3). Both modes are static-LBO must not change mid-burst, per datasheet note in table 10 and 11.

What are the supply voltage requirements and power-down capabilities of the 71T75602S166BG?

The 71T75602S166BG requires two 2.5V supplies: VDD (core, 2.375–2.625 V) and VDDQ (I/O, 2.375–2.625 V), each regulated independently. Power-down is enabled via the ZZ pin: asserting ZZ = HIGH gates the internal clock and reduces current to <100 µA while guaranteeing data retention across the full –40°C to +85°C range.