Renesas 71T75602S166BGI

Overview

71T75602S166BGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring burst pipelined reads/writes without dead cycles.

For engineers reviewing the 71T75602S166BGI datasheet, 71T75602S166BGI pinout, 71T75602S166BGI application, or 71T75602S166BGI equivalent, key selection criteria include ZBT™ burst timing compliance, 2.5V I/O supply (VDDQ) decoupling requirements, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 test interface implementation.

Technical Context

The 71T75602S166BGI implements a fully synchronous, pipelined architecture with positive-edge-triggered registers for address, control, and data paths. Its ZBT™ core eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions using internal burst counter logic and ADV/LD-controlled address sequencing.

It supports 4-word interleaved or linear burst modes via LBO pin selection, uses three chip enables (CE1/CE2/CE2) for depth expansion, and integrates IEEE 1149.1 boundary-scan with optional TRST-only available in BGA variants, not this TQFP part. Sleep mode (ZZ input) reduces power while retaining data.

Key Specifications

Pinout & Package

71T75602S166BGI is packaged in a 100-pin TQFP (PKG100) with 0.5 mm pitch, compliant with JEDEC MO-140. Pin functions are fully synchronous except OE (asynchronous) and TRST (optional, not implemented in TQFP).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-200BZI and AS7C33128P-20BIN, the 71T75602S166BGI uniquely delivers zero-turnaround burst performance with integrated sleep mode and IEEE 1149.1 testability-making it optimal for thermally constrained, high-bandwidth embedded systems requiring deterministic latency.

Availability

71T75602S166BGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data exchange requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71T75602S166BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75602S166BGI belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for high-speed packet-processing systems demanding zero bus turnaround, burst pipelining, and industrial-grade reliability.

FAQ

What is the memory configuration and total capacity of the 71T75602S166BGI?

The 71T75602S166BGI is configured as 512K × 36-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. It supports full-word or byte-level writes via four independent BW signals and is optimized for ZBT™ burst operations. This configuration matches high-bandwidth data path widths in network processors and telecom ASICs.

Does the 71T75602S166BGI support both linear and interleaved burst modes?

Yes, the 71T75602S166BGI supports both linear and interleaved 4-word burst sequences, selected by the static LBO pin: LOW enables linear order (A0, A1, A2, A3), HIGH enables interleaved order (A0, A2, A1, A3). The burst counter advances on each rising CLK edge when ADV/LD = HIGH, and the sequence wraps upon completion.

What is the role of the ZZ pin on the 71T75602S166BGI, and how does it affect power consumption?

The ZZ pin on the 71T75602S166BGI is a synchronous sleep mode input. When driven HIGH, it internally gates the clock and places the device in its lowest power state while guaranteeing data retention. Power resumes automatically on next valid CLK edge after ZZ returns LOW-no reset or reinitialization is required.

Is JTAG boundary scan supported on the 71T75602S166BGI, and which pins are used?

Yes, the 71T75602S166BGI implements IEEE 1149.1-compliant JTAG boundary scan. Pins TMS (pin 38), TDI (pin 39), TCK (pin 43), and TDO (pin 42) are assigned in the 100-pin TQFP package. TRST is optional and not implemented in TQFP; it is only available in BGA variants per the datasheet.

How does the 71T75602S166BGI handle read-after-write transitions without bus turnaround delay?

The 71T75602S166BGI achieves zero bus turnaround (ZBTTM) by decoupling address/control registration from data transfer timing. Reads and writes are initiated on the same clock edge, and data appears exactly two cycles later-regardless of operation type. No dead cycles occur because the bus direction is managed internally via registered I/O and burst counter logic.