Renesas 71T75602S166PFG

Overview

71T75602S166PFG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and JTAG IEEE 1149.1 compliance - deployed in high-speed networking line cards and packet buffer subsystems.

For engineers reviewing the 71T75602S166PFG datasheet, 71T75602S166PFG pinout, 71T75602S166PFG application, or 71T75602S166PFG equivalent, key selection criteria include burst mode configuration (linear/interleaved via LBO), individual byte write control (BW1–BW4), synchronous chip enable architecture (CE1/CE2/CE2), and TQFP-100 packaging with industrial temperature support (–40°C to +85°C).

Technical Context

The 71T75602S166PFG implements a fully synchronous, pipelined read/write interface with address/control registration on the rising CLK edge and data output registration two cycles later. Its ZBT™ architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access.

Burst operations are managed by an on-chip counter controlled by ADV/LD and LBO; linear or interleaved 4-word sequences are generated without external logic. JTAG boundary scan (TMS/TDI/TCK/TDO/TRST) enables in-system testability, while ZZ input supports synchronous sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71T75602S166PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (notch-marked side), and the package supports both commercial and industrial temperature grades.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-200BZI and AS7C3316000B-200BIN, the 71T75602S166PFG uniquely combines 512K×36 density, ZBT™ zero-turnaround, industrial temperature rating, and IEEE 1149.1 JTAG in a single TQFP-100 package - making it optimal for telecom and testable embedded buffers where timing determinism and debug access are mandatory.

Availability

71T75602S166PFG is available at Aetrix Electronics and suitable for packet buffering in networking equipment, real-time data acquisition systems, and industrial communication modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71T75602S166PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75602S166PFG belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-bus-turnaround applications in high-speed packet processing, baseband processing, and real-time control systems demanding deterministic latency and burst efficiency.

FAQ

What is the memory organization and total bit capacity of the 71T75602S166PFG?

The 71T75602S166PFG is configured as 512K × 36-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM storage. This organization supports both single-word and 4-word burst accesses, with address lines A0–A18 enabling full 512K-word addressing. The device does not support 1M × 18-bit mode - that configuration applies only to the pin-compatible 71T75802 variant.

Does the 71T75602S166PFG support burst mode, and how is burst order selected?

Yes, the 71T75602S166PFG supports 4-word burst mode via its on-chip counter. Burst order is selected by the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A1, A2+1, A3+1). The burst is initiated by holding ADV/LD = HIGH after initial address load, and the sequence wraps automatically upon completion.

What are the voltage requirements for VDD and VDDQ on the 71T75602S166PFG?

The 71T75602S166PFG requires VDD = 2.5 V ±5% (2.375 V to 2.625 V) for core logic and VDDQ = 2.5 V ±5% (2.375 V to 2.625 V) for I/O drivers. These are separate supplies and must be independently regulated. Exceeding VDDQ +0.5 V on I/O pins or applying voltage before VDD stabilization may cause latch-up or damage.

How does the chip enable architecture work on the 71T75602S166PFG?

The 71T75602S166PFG uses three chip enables: CE1 and CE2 are active-LOW, while CE2 is active-HIGH. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. Deselection occurs if any one enable violates this condition, triggering a two-cycle tri-state on the data bus - enabling clean depth expansion without bus contention.

Is JTAG boundary scan supported on the 71T75602S166PFG, and which pins are used?

Yes, the 71T75602S166PFG implements IEEE 1149.1-compliant JTAG boundary scan. Pins TMS (pin 38), TDI (pin 39), TCK (pin 43), and TDO (pin 42) are dedicated for scan chain operation. TRST is not available in the TQFP-100 package (only BGA); all JTAG pins have internal pull-ups and may be left unconnected to disable the TAP controller.