Renesas 71T75602S166PFG8

Overview

71T75602S166PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP package. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic burst read/write without dead cycles.

For engineers reviewing the 71T75602S166PFG8 datasheet, 71T75602S166PFG8 pinout, 71T75602S166PFG8 application, or 71T75602S166PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, 4-word interleaved/linear burst capability, 2.5V I/O supply (VDDQ), individual byte write control (BW1–BW4), and IEEE 1149.1 JTAG boundary scan support for system-level testability.

Technical Context

The 71T75602S166PFG8 implements a fully pipelined synchronous interface with positive-edge-triggered registers for address, data, and control signals. Its on-chip burst counter enables 4-word burst sequences-configurable via LBO pin for linear or interleaved order-and eliminates bus turnaround latency between consecutive reads and writes.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, internal output buffer synchronization (removing OE timing constraints), and a dedicated ZZ input for synchronous sleep mode with guaranteed data retention. All synchronous operations are referenced to CLK rising edge; OE remains the sole asynchronous signal.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5313 drw 02r for 512K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362KV18 and AS7C331024B, the 71T75602S166PFG8 delivers superior timing determinism (3.2 ns tCD, zero-turnaround), native 2.5V operation, and integrated JTAG-making it the only choice for new designs requiring high-speed burst coherence and production testability.

Availability

71T75602S166PFG8 is available at Aetrix Electronics and suitable for network packet processing, telecom line card buffering, and industrial real-time data logging requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 71T75602S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71T75602S166PFG8 belongs to IDT's ZBT™ SRAM product line-designed specifically for zero-latency, burst-oriented applications in networking, telecom infrastructure, and high-end embedded systems demanding deterministic memory access.

FAQ

What memory organization does the 71T75602S166PFG8 support?

The 71T75602S166PFG8 is configured as 512K × 36-bit (18 Mbit total), providing 36-bit wide data I/O with individual byte write enables (BW1–BW4). It does not support 1M × 18 mode-this is implemented in the pin-compatible 71T75802 variant. The 71T75602S166PFG8 uses address pins A0–A18 exclusively.

Does the 71T75602S166PFG8 require external OE control?

No-the 71T75602S166PFG8 features internally synchronized output enable logic. OE is asynchronous but can be tied low permanently in most designs; the device automatically tri-states outputs during deselect or write cycles without external timing management. This simplifies PCB layout and eliminates OE skew concerns.

How is burst order selected on the 71T75602S166PFG8?

Burst order is controlled by the LBO (Linear Burst Order) pin: LBO = LOW selects linear burst (A0, A1, A2, A3); LBO = HIGH selects interleaved burst (A0, A1, A2, A3 per IEEE standard). LBO is a static input and must remain stable during burst operation-changing it mid-burst causes undefined behavior.

What is the function of the ZZ pin on the 71T75602S166PFG8?

The ZZ pin enables synchronous sleep mode: when driven HIGH, it gates the internal clock and reduces power consumption to minimum while guaranteeing data retention. ZZ is sampled synchronously on CLK rising edge; it has an internal pulldown resistor, so floating = inactive. This feature is essential for power-constrained telecom and industrial applications.

Is JTAG boundary scan supported on the 71T75602S166PFG8 in TQFP package?

Yes-the 71T75602S166PFG8 includes full IEEE 1149.1 JTAG boundary scan support in its 100-pin TQFP package. Pins TMS, TDI, TCK, and TDO are assigned to pins 38, 39, 43, and 42 respectively (per 5313 drw 02r), enabling structural test and debug without functional interference.