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Renesas 71T75602S166PFGI

Part No.:
71T75602S166PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75602S166PFGI.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,698

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Product details

Overview

71T75602S166PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined burst outputs. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75602S166PFGI datasheet, 71T75602S166PFGI pinout, 71T75602S166PFGI application, or 71T75602S166PFGI equivalent, key selection criteria include ZBT timing compliance, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 testability, and 4-word linear/interleaved burst capability.

Technical Context

The 71T75602S166PFGI implements a fully synchronous, clock-edge-triggered architecture with input/output registers aligned to the rising CLK edge. Its ZBT feature eliminates dead cycles between consecutive reads and writes by internally synchronizing output buffer enable-removing external OE control dependency.

It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved addressing sequences. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and includes a dedicated ZZ pin for synchronous sleep mode with guaranteed data retention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18,874,368 bits); supports high-bandwidth parallel data paths in packet buffering applications
Max Clock Frequency200 MHz; enables 5 ns cycle time for real-time traffic handling in telecom infrastructure
Clock-to-Data Access3.2 ns; guarantees deterministic read latency critical for pipeline-synchronized systems
Supply VoltagesVDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); decoupled power domains reduce noise coupling
Operating Temperature–40°C to +85°C; qualified for industrial-grade deployment in base stations and industrial controllers
Burst Capability4-word burst (linear or interleaved); reduces address bus toggling and improves effective throughput
JTAG InterfaceIEEE 1149.1 compliant; enables boundary-scan testing without additional test fixtures

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout validated per PKG100 configuration for 512K × 36 mode.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled
CLKSystem Clock InputRising-edge-triggered master timing reference; all synchronous operations referenced to this edge
R/WRead/Write ControlSynchronous signal defining load-cycle direction; determines whether next data cycle is read or write
ADV/LDBurst Counter ControlHIGH advances internal burst counter; LOW loads new external address into register
LBOBurst Order SelectLOW = linear sequence (0,1,2,3); HIGH = interleaved (0,2,1,3); static during operation
CE1, CE2, CE2Chip EnablesThree independent enables (CE1/CE2 active-low, CE2 active-high); allow flexible depth expansion
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes; support partial-word updates without read-modify-write
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations
ZZSleep Mode InputActive-HIGH synchronous gate for CLK; reduces dynamic power while retaining memory contents
TMS, TDI, TCK, TDOJTAG Test InterfaceBoundary-scan control and data pins; enable production test and debug without intrusive probing

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates bus turnaround dead cycles between read and write bursts-enabling continuous 200 MHz throughput
Pipelined Output RegistersOutput data valid two clocks after address/control registration-simplifies timing closure in high-speed PCB layouts
Individual Byte Write ControlFour independent BWx pins allow selective 9-bit writes-reducing bus contention and power in partial-update scenarios
Internally Synchronized OEOE is asynchronous but internally synchronized; eliminates metastability risk and removes need for external OE timing control
Three Chip EnablesSupports seamless depth expansion across multiple devices without external logic-reducing BOM count and routing complexity

Applications

High-Speed Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switch fabric ASICs.

IC Role / Device Role / Timing Role: Primary ZBT SRAM buffer interfacing directly with packet processor's 36-bit data bus and burst-addressing engine.

Use Value: 3.2 ns clock-to-data access and zero-turnaround burst mode ensure no pipeline stalls during back-to-back packet reads/writes.

Use Scenario: Serving as frame buffer and descriptor memory in OC-192/STM-64 SONET/SDH line interface cards.

IC Role / Device Role / Timing Role: High-reliability, industrial-temperature SRAM providing deterministic latency for time-critical framing logic.

Use Value: –40°C to +85°C rating and JTAG testability meet carrier-grade reliability and field-service requirements.

Network Processor CacheIndustrial Real-Time Controller

Use Scenario: Acting as instruction/data cache for multi-threaded network processors executing deep-pipeline forwarding algorithms.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM tightly coupled to processor's burst-capable memory controller.

Use Value: 4-word burst capability (linear/interleaved) matches typical cache line sizes-maximizing bandwidth efficiency.

Use Scenario: Providing deterministic memory storage for motion control PLCs and CNC machine tool sequencers.

IC Role / Device Role / Timing Role: Industrial-grade ZBT SRAM interfacing with FPGA-based control logic requiring jitter-free memory access.

Use Value: Synchronous sleep mode (ZZ pin) enables low-power idle states while preserving context-extending system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV181M × 18 organization (same density), 166 MHz max, 3.8 ns access, 1.8 V core/I/OLower voltage, lower speed, different bus width-requires PCB redesign for 36-bit interfaceSelect only if system operates at 1.8 V and 18-bit data path suffices; not drop-in compatible
AS7C33128PFS1M × 32 organization, 166 MHz, 4.5 ns access, 3.3 V supply, no ZBT or JTAGNo zero-turnaround support, no burst counter, no boundary scan-limits use in high-throughput pipelinesConsider for cost-sensitive non-pipelined designs where ZBT and JTAG are unnecessary

Compared with CY7C1315KV18 and AS7C33128PFS, the 71T75602S166PFGI uniquely delivers 200 MHz ZBT operation with 36-bit bus width, industrial temperature range, and IEEE 1149.1 testability-making it optimal for telecom and networking equipment demanding deterministic latency and field-test readiness.

Availability

71T75602S166PFGI is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and industrial real-time controller applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71T75602S166PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions.

The 71T75602S166PFGI belongs to IDT's ZBT™ SRAM product line, designed specifically for applications demanding zero bus turnaround, pipelined burst access, and industrial-grade reliability in networking and communications infrastructure.

FAQ

What is the memory organization and total capacity of the 71T75602S166PFGI?

The 71T75602S166PFGI is configured as 512K × 36 bits, delivering 18,874,368 total bits (18 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data transfers and is optimized for high-bandwidth applications such as packet buffering and network processor caches. The device does not support 1M × 18 mode-only the 512K × 36 configuration is implemented in this specific part number.

Does the 71T75602S166PFGI support ZBT™ (Zero Bus Turnaround) functionality, and how is it implemented?

Yes, the 71T75602S166PFGI fully implements ZBT™ architecture. It eliminates dead cycles between read and write operations by internally synchronizing the output buffer enable signal-removing the need for external OE control. This allows immediate transition from a write burst to a read burst (or vice versa) without bus idle time, enabling sustained 200 MHz throughput in pipelined systems.

What package type and pin count does the 71T75602S166PFGI use, and is it RoHS-compliant?

The 71T75602S166PFGI is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC standard PKG100, with 14 mm × 20 mm body size and 0.5 mm lead pitch. It is a green (RoHS-compliant) part, meeting lead-free soldering requirements. The "PFGI" suffix explicitly denotes the industrial-temperature, lead-free TQFP variant.

How does the burst counter operate in the 71T75602S166PFGI, and what controls burst order?

The 71T75602S166PFGI features a synchronous 4-word burst counter controlled by the ADV/LD and LBO pins. When ADV/LD = HIGH, the counter increments; when ADV/LD = LOW, a new external address is loaded. Burst order is selected via LBO: LOW enables linear sequence (A0, A1, A2, A3), HIGH enables interleaved (A0, A2, A1, A3). Both modes wrap automatically after four words.

What are the power supply requirements and sleep mode capabilities of the 71T75602S166PFGI?

The 71T75602S166PFGI requires two 2.5 V supplies: VDD (core, ±5%) and VDDQ (I/O, ±5%). It supports synchronous sleep mode via the ZZ pin: asserting ZZ = HIGH gates the internal clock and reduces power consumption while guaranteeing data retention. Sleep entry/exit is synchronized to CLK, ensuring deterministic behavior in real-time systems.

71T75602S166PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

71T75602S166PFGI FAQ

1.How can I place an order for 71T75602S166PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75602S166PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75602S166PFGI reliable?

The price and inventory of 71T75602S166PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75602S166PFGI is usually 5 days.

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71T75602S166PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75602S166PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75602S166PFGI?

For technical support, including 71T75602S166PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75602S166PFGI requirements.

6.How does Aetrix verify that 71T75602S166PFGI is sourced from the original manufacturer or authorized distributors?

All 71T75602S166PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75602S166PFGI meets industry standards.

7.What is the process for return or replacement of 71T75602S166PFGI?

All 71T75602S166PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71T75602S166PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75602S166PFGI part is unused and in its original packaging.

Return procedure for 71T75602S166PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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