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Renesas 71T75602S166PFGI8

Part No.:
71T75602S166PFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75602S166PFGI8.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,446

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Product details

Overview

71T75602S166PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, pipelined outputs, and JTAG IEEE 1149.1 compliance - deployed in high-speed networking line cards for packet buffering with deterministic latency.

For engineers reviewing the 71T75602S166PFGI8 datasheet, 71T75602S166PFGI8 pinout, 71T75602S166PFGI8 application, or 71T75602S166PFGI8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), TQFP-100 packaging, and ZBT™ bus efficiency in backplane interface buffers.

Technical Context

The 71T75602S166PFGI8 implements a fully synchronous, rising-edge-triggered architecture with registered address, data, and control paths. Its internal burst counter enables four-word bursts (linear or interleaved via LBO), and ADV/LD controls either external address load (low) or counter increment (high).

ZBTTM eliminates dead cycles between read/write transitions by overlapping bus turnaround with valid data transfer. The device uses separate 2.5V core (VDD) and I/O (VDDQ) supplies, supports power-down via ZZ input, and integrates boundary-scan logic compliant with IEEE 1149.1 - all synchronized to CLK with CEN gating capability.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18 Mbit total); supports high-bandwidth parallel data paths in telecom switching fabric
Max Clock Frequency200 MHz; enables 3.2 ns clock-to-data access for sub-5 ns read/write cycle timing in pipeline-critical systems
Supply VoltagesVDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); independent regulation allows noise isolation between logic and data buses
Burst Capability4-word burst (linear or interleaved); reduces address bus overhead and improves throughput in sequential packet buffer access
Operating Temperature–40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient telecom equipment enclosures
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly and thermal management in dense PCB layouts
JTAG InterfaceIEEE 1149.1-compliant boundary scan; enables in-system testability and debug without physical probe access

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5313 drw 02r for 512K × 36 configuration.

Pin/TerminalCircuit RoleDesign Meaning
CLKClock InputRising-edge synchronous reference for all registers; defines timing boundaries for pipelined read/write operations
A0–A18Address Inputs19-bit address bus supporting 512K depth; sampled synchronously with ADV/LD and chip enables
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered inputs/outputs enable precise timing closure at 200 MHz
R/WRead/Write ControlSynchronous signal determining cycle type; latched on rising CLK edge with ADV/LD low to initiate load operation
ADV/LDAddress Load / Burst AdvanceLow = load new external address; high = increment internal burst counter; enables seamless burst sequencing
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes; allows partial-word updates without disturbing adjacent data
CE1, CE2, CE2Chip EnablesThree enables (CE1/CE2 active-low, CE2 active-high) for depth expansion; any false enable blocks new operations
LBOBurst Order SelectStatic input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence per IEEE 1149.1 JTAG spec
ZZSleep Mode InputActive-high synchronous entry into lowest-power state; retains memory contents while gating internal clock
TMS, TDI, TCK, TDOJTAG Test InterfaceBoundary-scan control/data/clock pins; support IEEE 1149.1 test access port for production and field diagnostics

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates bus turnaround dead cycles between reads and writes - enabling continuous 200 MHz data streaming in packet forwarding engines
Pipelined OutputsInternally synchronized output buffer enable removes need for external OE timing control - simplifies system-level timing budget
Individual Byte WriteBW1–BW4 allow selective 9-bit updates without full-word overwrite - critical for header modification in network processors
2.5V Core + I/O SuppliesSeparate VDD (core) and VDDQ (I/O) rails reduce supply coupling noise and improve signal integrity on 36-bit data buses
Industrial Temperature Range–40°C to +85°C operation qualified for base station and optical transport equipment deployed in non-climate-controlled environments

Applications

Telecom Line Card BufferingHigh-Speed Switch Fabric Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in modular carrier-grade switches.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly with SerDes PHYs and traffic manager ASICs via parallel 36-bit bus.

Use Value: ZBTTM enables uninterrupted read-after-write for header rewrite operations, reducing average packet latency by up to 1.8 ns per transition versus conventional SRAM.

Use Scenario: Providing shared memory for crossbar arbitration logic in multi-gigabit enterprise switches.

IC Role / Device Role / Timing Role: Synchronous dual-port buffer supporting concurrent ingress/egress queue management with burst-aligned access.

Use Value: 4-word burst mode cuts address bus activity by 75% during sequential queue reads, lowering system-level EMI and power consumption.

Network Processor Co-ProcessorIndustrial Real-Time Controller Cache

Use Scenario: Offloading packet classification and deep packet inspection tasks from main CPU in DPI appliances.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for rule-set lookup tables accessed by dedicated microengines.

Use Value: Pipelined outputs and 200 MHz clocking ensure deterministic <3.2 ns access time - meeting hard real-time deadlines for 10 Gbps flow processing.

Use Scenario: Storing motion control trajectory data and sensor fusion buffers in CNC machine controllers.

IC Role / Device Role / Timing Role: Deterministic-access local memory for FPGA-based motion sequencers requiring jitter-free data delivery.

Use Value: Industrial temperature rating and JTAG testability support long-term reliability and field-upgrade verification in factory automation environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV18-200BZI1M × 18-bit organization, same 200 MHz speed, but no ZBTTM - requires external bus turnaround managementBest suited for simpler burst-unaware controllers where address bus reuse is not criticalSelect when migrating legacy designs using x18 interface and lower density is acceptable
AS7C331024B-200BIN1M × 36-bit, 200 MHz, but asynchronous OE and no JTAG - lacks boundary scan and pipelined output enableFits cost-sensitive industrial PLCs where testability and precise timing control are secondaryChoose when eliminating JTAG complexity and accepting higher timing margin risk is acceptable

Compared with CY7C1315KV18-200BZI and AS7C331024B-200BIN, the 71T75602S166PFGI8 delivers unique ZBTTM bus efficiency and integrated JTAG - making it optimal for high-reliability, high-throughput telecom and networking systems where deterministic latency and in-system testability are mandatory.

Availability

71T75602S166PFGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and high-performance computing applications requiring stable component supply, long lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71T75602S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions.

The 71T75602S166PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, switch fabric, and network processor subsystems.

FAQ

What is the memory organization and density of the 71T75602S166PFGI8?

The 71T75602S166PFGI8 is configured as 512K × 36-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. This organization supports parallel 36-bit data paths ideal for high-throughput packet buffering in telecom line cards and switch fabrics where wide bus interfaces maximize bandwidth efficiency.

Does the 71T75602S166PFGI8 support burst mode, and how is burst order controlled?

Yes, the 71T75602S166PFGI8 supports 4-word burst mode with selectable linear or interleaved sequences. Burst order is controlled by the static LBO (Linear/Interleaved Burst Order) pin: LBO = low selects linear addressing, while LBO = high selects interleaved. The internal burst counter advances on each rising CLK edge when ADV/LD is high.

What is the role of the ZZ pin on the 71T75602S166PFGI8, and does it retain data in sleep mode?

The ZZ pin is the synchronous sleep mode input on the 71T75602S166PFGI8. When asserted high, it gates the internal clock and reduces power consumption to its lowest level. Crucially, data retention is guaranteed during sleep mode - ensuring no loss of buffered packet data or configuration state when the device enters low-power standby.

How many chip enable signals does the 71T75602S166PFGI8 have, and what are their polarities?

The 71T75602S166PFGI8 has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. Chip selection requires CE1 = low, CE2 = low, and CE2 = high simultaneously. Any deviation initiates a two-cycle deselect sequence, tri-stating the data bus - enabling clean depth expansion in multi-SRAM memory banks.

Is the 71T75602S166PFGI8 compatible with industrial temperature requirements, and what is its rated range?

Yes, the 71T75602S166PFGI8 is qualified for industrial temperature operation across –40°C to +85°C ambient conditions. This rating is explicitly confirmed in the datasheet (Section 8, Table 05) and makes the device suitable for deployment in base stations, optical transport units, and factory automation controllers operating outside climate-controlled environments.

71T75602S166PFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

71T75602S166PFGI8 FAQ

1.How can I place an order for 71T75602S166PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75602S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75602S166PFGI8 reliable?

The price and inventory of 71T75602S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75602S166PFGI8 is usually 5 days.

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4.How is shipping managed for 71T75602S166PFGI8?

71T75602S166PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75602S166PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75602S166PFGI8?

For technical support, including 71T75602S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75602S166PFGI8 requirements.

6.How does Aetrix verify that 71T75602S166PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71T75602S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75602S166PFGI8 meets industry standards.

7.What is the process for return or replacement of 71T75602S166PFGI8?

All 71T75602S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71T75602S166PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75602S166PFGI8 part is unused and in its original packaging.

Return procedure for 71T75602S166PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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