Renesas 71T75802S133PFGI

Overview

71T75802S133PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and 4-word burst capability for high-bandwidth memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the 71T75802S133PFGI datasheet, 71T75802S133PFGI pinout, 71T75802S133PFGI application, or 71T75802S133PFGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 2.5V core/I/O supply, and JTAG IEEE 1149.1 test interface integration.

Technical Context

The 71T75802S133PFGI implements a fully synchronous, pipelined architecture with dual-edge-triggered control registers and an on-chip 4-word burst counter. Address, data, and control signals are registered on the rising edge of CLK, with read/write data appearing two cycles later.

It supports linear or interleaved burst sequences via the static LBO pin, enables individual byte writes (BW1–BW4) for partial-word updates, and uses three chip enables (CE1, CE2, CE2) with two-cycle deselect timing. Sleep mode is entered synchronously via the ZZ input, guaranteeing data retention.

Key Specifications

Pinout & Package

71T75802S133PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout conforms to PKG100 configuration for 512K × 36-bit mode as documented in IDT datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-167AXC and AS7C33128A-15JIN, the 71T75802S133PFGI delivers 200 MHz ZBT™ performance at 2.5V with integrated JTAG and industrial temperature support - making it uniquely suited for next-generation telecom and networking equipment requiring deterministic low-latency memory access.

Availability

71T75802S133PFGI is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and industrial PLC memory caches requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.

Supply support for 71T75802S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71T75802S133PFGI belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for zero-latency, high-throughput memory subsystems in telecom infrastructure, enterprise networking, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71T75802S133PFGI?

The 71T75802S133PFGI is rated for 200 MHz operation, delivering a 3.2 ns clock-to-data access time. This specification applies to the 512K × 36-bit configuration in the industrial temperature range (–40°C to +85°C) and is validated under VDD/VDDQ = 2.5 V ±5%. The "S133" suffix in the part number explicitly denotes the 200 MHz speed grade.

Does the 71T75802S133PFGI support both linear and interleaved burst modes?

Yes, the 71T75802S133PFGI supports both linear and interleaved 4-word burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear bursts (e.g., A0→A1→A2→A3); when HIGH, it uses interleaved order (e.g., A0→A2→A1→A3). This selection is static and must remain stable during burst operation.

What package type does the 71T75802S133PFGI use, and is it RoHS compliant?

The 71T75802S133PFGI uses a 100-pin plastic thin quad flatpack (TQFP) per JEDEC standard, with dimensions 14 mm × 20 mm and 0.5 mm lead pitch. It is a green (RoHS-compliant) part, as confirmed in the ordering information section of the official IDT datasheet (Rev. 6.42), and carries the "G" suffix in its full marking per Renesas packaging standards.

How does the ZBTTM feature improve system performance in the 71T75802S133PFGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S133PFGI eliminates idle cycles when switching between read and write operations. Unlike conventional SRAMs that require bus release/reacquisition, the 71T75802S133PFGI allows immediate back-to-back reads and writes - enabling sustained 200 MHz throughput in full-duplex memory channels used in packet buffering and baseband processing.

Can the 71T75802S133PFGI operate with only one chip enable asserted?

Yes - the 71T75802S133PFGI requires only one of its three chip enables (CE1, CE2, or CE2) to be active to enable operation. CE1 and CE2 are active-low; CE2 is active-high. The device enters deselected (high-Z) state if all three enables are inactive, and initiates a two-cycle deselect sequence upon transition, ensuring clean bus release before subsequent access.