Renesas 71T75802S133PFGI8

Overview

71T75802S133PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and JTAG IEEE 1149.1 compliance. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic burst read/write latency.

For engineers reviewing the 71T75802S133PFGI8 datasheet, 71T75802S133PFGI8 pinout, 71T75802S133PFGI8 application, or 71T75802S133PFGI8 equivalent, key selection criteria include ZBT™ burst timing behavior, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and 2.5V I/O supply (VDDQ) decoupling requirements.

Technical Context

The 71T75802S133PFGI8 implements a fully synchronous, rising-edge-triggered architecture with registered address, control, and data paths. Its on-chip 4-word burst counter supports both linear and interleaved sequences selected by the static LBO pin, enabling efficient memory access without external address generation logic.

ZBTTM functionality eliminates dead cycles between consecutive reads and writes by internally managing bus direction transitions; output enable (OE) is asynchronous but internally synchronized via pipelined output registers, removing need for precise OE timing control in high-speed systems.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5313 drw 02r (PKG100 configuration for 512K × 36).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-167BAXI and AS7C33128PFS-133JCN, the 71T75802S133PFGI8 uniquely delivers 200 MHz ZBT™ operation with integrated burst counter and IEEE 1149.1 JTAG in a 2.5V industrial-grade TQFP package - making it optimal for high-speed telecom and networking datapaths requiring testability and timing precision.

Availability

71T75802S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, and baseband processor memory applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.

Supply support for 71T75802S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance mixed-signal solutions for communications and computing infrastructure.

The 71T75802S133PFGI8 belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for high-speed packet-processing systems where zero bus turnaround, burst efficiency, and deterministic timing are mandatory for line-rate performance.

FAQ

What is the maximum operating frequency of the 71T75802S133PFGI8?

The 71T75802S133PFGI8 is rated for 200 MHz operation, corresponding to a 5 ns clock period and 3.2 ns clock-to-data access time. This specification applies to the 512K × 36 configuration in industrial temperature range and requires strict adherence to setup/hold timing margins on all synchronous inputs relative to the CLK rising edge.

Does the 71T75802S133PFGI8 support both linear and interleaved burst modes?

Yes, the 71T75802S133PFGI8 supports both linear and interleaved 4-word burst sequences. The LBO pin selects the mode: LBO = LOW configures linear burst order (A0, A0+1, A0+2, A0+3), while LBO = HIGH selects interleaved order (A0, A0+2, A0+1, A0+3). LBO is a static input and must remain stable during burst operation.

How does the ZBTTM feature eliminate dead cycles in the 71T75802S133PFGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S133PFGI8 internally manages bus direction transitions between consecutive read and write operations. Unlike conventional SRAMs that require idle cycles to change bus direction, the 71T75802S133PFGI8 allows immediate back-to-back read/write cycles without inserting dead cycles - preserving full bandwidth in high-throughput datapaths.

What is the function of the ADV/LD pin in the 71T75802S133PFGI8?

The ADV/LD pin in the 71T75802S133PFGI8 controls burst address sequencing: when sampled LOW at the CLK rising edge, it loads a new external address; when sampled HIGH, it advances the internal 4-word burst counter. This dual-mode operation enables flexible memory access patterns - external address loading for random access and counter advancement for sequential bursts - all synchronized to CLK.

Is JTAG boundary-scan supported on the 71T75802S133PFGI8, and which pins are used?

Yes, the 71T75802S133PFGI8 includes IEEE 1149.1-compliant JTAG boundary-scan. Pins TMS, TDI, TCK, and TDO are dedicated to the JTAG interface; TRST is optional and available only in BGA packages (not present in the TQFP variant of 71T75802S133PFGI8). All JTAG pins have internal pull-ups except ZZ, which has an internal pulldown.