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Renesas 71T75802S150PFG

Part No.:
71T75802S150PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75802S150PFG.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,253

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Product details

Overview

71T75802S150PFG from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit (18-Mbit) organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75802S150PFG datasheet, 71T75802S150PFG pinout, 71T75802S150PFG application, or 71T75802S150PFG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) support, industrial temperature range (–40°C to +85°C), and JTAG IEEE 1149.1 test interface integration.

Technical Context

The 71T75802S150PFG implements a fully synchronous, clock-edge-triggered architecture with pipelined input and output registers. Its ZBT™ core eliminates dead cycles between consecutive reads and writes by overlapping address/control latching and data transfer phases - enabled via ADV/LD-controlled burst counter and internally synchronized OE.

Burst sequencing (linear or interleaved) is selected statically via LBO pin, while four-word bursts are executed using internal address incrementing. The device supports individual byte write control (BW1–BW4), three chip enables (CE1/CE2/CE2) for depth expansion, and IEEE 1149.1-compliant boundary scan with optional TRST reset.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18,874,368-bit capacity); supports 1M × 18-bit mode via configuration
Max Clock Frequency200 MHz - enables 5 ns cycle time for high-throughput packet buffering in telecom ASIC interfaces
Access Time3.2 ns clock-to-data - guarantees deterministic read latency for real-time traffic shaping
Supply VoltagesVDD = 2.5 V ±5% (core); VDDQ = 2.5 V ±5% (I/O) - separates power domains to reduce noise coupling
Operating Temperature–40°C to +85°C - qualified for industrial-grade embedded networking equipment
Burst Capability4-word linear or interleaved burst - reduces address bus overhead in sequential data streaming
JTAG SupportIEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST - enables in-system test and debug without external logic

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT71T75802 PKG100 drawing (Rev 6.42).

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Input19-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLKClock InputPrimary timing reference; all synchronous inputs sampled on rising edge; OE is asynchronous
R/WRead/Write ControlSynchronous signal defining load-cycle operation type; determines burst direction at cycle initiation
ADV/LDBurst Counter ControlLOW loads new external address; HIGH advances internal burst counter - enables pipelined burst execution
BW1–BW4Byte Write EnablesActive-low synchronous controls for 9-bit byte segments; allows partial-word writes without masking logic
CE1, CE2, CE2Chip Enable InputsThree independent enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and deselect control
ZZSleep Mode InputActive-high synchronous entry into low-power retention mode; gates internal clock and reduces IDD to minimum
TMS/TDI/TCK/TDO/TRSTJTAG InterfaceBoundary scan test pins compliant with IEEE 1149.1; TRST is optional asynchronous reset (BGA only)

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates bus turnaround dead cycles between reads and writes - increases effective bandwidth in burst-intensive systems
Pipelined Output BufferInternally synchronized OE removes need for external timing control - simplifies PCB layout and reduces system jitter
Four-Word Burst ModesConfigurable linear or interleaved sequences via LBO pin - matches CPU/cache burst patterns without glue logic
Individual Byte WriteIndependent BW1–BW4 control enables precise 9-bit segment updates - avoids full-word read-modify-write overhead
Power-Down Sleep ModeZZ input gates clock and cuts dynamic power while retaining data - extends uptime in thermally constrained chassis

Applications

Network Packet Processor BufferTelecom Line Card FIFO

Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit line cards before classification or forwarding.

IC Role / Device Role / Timing Role: High-speed dual-port buffer with zero-turnaround burst reads/writes synchronized to ASIC clock domain.

Use Value: 3.2 ns access and 200 MHz throughput enable line-rate processing of 10Gbps+ traffic without backpressure stalls.

Use Scenario: Temporary storage of TDM voice channels and signaling data in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous FIFO with programmable burst depth and industrial temp tolerance for field-deployed hardware.

Use Value: –40°C to +85°C rating and VDDQ isolation ensure stable operation in uncontrolled outdoor cabinets.

Baseband Processor CacheRadar Signal Processing Buffer

Use Scenario: Holding intermediate FFT results and coefficient tables in LTE/5G baseband SoCs during channel estimation.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed via burst-aligned AXI interface with deterministic pipeline stages.

Use Value: Pipelined outputs and ADV/LD-controlled counter reduce instruction stall cycles by up to 30% vs. standard SRAM.

Use Scenario: Capturing high-speed ADC samples from phased-array radar front-ends prior to DSP correlation.

IC Role / Device Role / Timing Role: Time-critical circular buffer with JTAG-accessible debug visibility for real-time waveform validation.

Use Value: IEEE 1149.1 boundary scan enables in-system verification of signal integrity across 100-pin TQFP interconnects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV18-200BZI1M × 18-bit organization; no ZBT™ architecture; 200 MHz max but 4.5 ns access timeLacks zero-bus-turnaround; requires external OE control and has no burst counterChoose when 1M×18 density suffices and ZBT™ timing is not required
AS7C331024B-20JIN32M-bit async SRAM; no clock, no burst, no JTAG; 20 ns access; 3.3V onlyFully asynchronous interface; incompatible timing model and voltage domainSelect only for legacy designs where synchronous timing and low latency are non-critical

Compared with CY7C1315KV18-200BZI and AS7C331024B-20JIN, the 71T75802S150PFG delivers superior deterministic latency (3.2 ns vs. ≥4.5 ns), integrated burst control, and JTAG testability - making it optimal for next-generation telecom and defense signal processing where timing predictability is mandatory.

Availability

71T75802S150PFG is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband processors, and radar signal processing systems requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71T75802S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71T75802S150PFG belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for low-latency, burst-oriented buffering in infrastructure-grade networking and signal processing applications.

FAQ

What is the maximum operating frequency of the 71T75802S150PFG?

The 71T75802S150PFG is rated for 200 MHz operation, delivering a 5 ns clock cycle time and 3.2 ns clock-to-data access. This performance is validated across the full industrial temperature range (–40°C to +85°C) and 2.5 V ±5% supply conditions. The 200 MHz specification applies specifically to the 71T75802 variant, including the 71T75802S150PFG part number.

Does the 71T75802S150PFG support both 512K × 36 and 1M × 18 memory configurations?

Yes, the 71T75802S150PFG supports both configurations. In 512K × 36 mode, it uses A0–A18 address lines and provides 36-bit data I/O (I/O0–I/O31 plus I/OP1–I/OP4). In 1M × 18 mode, it uses A0–A19 and provides 18-bit data I/O (I/O0–I/O15 plus I/OP1–I/OP2), with unused pins configured as NC. Configuration is determined by system address decoding and pin strapping per datasheet Table 25a/b.

How does the ZBTTM feature eliminate dead cycles in the 71T75802S150PFG?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S150PFG eliminates dead cycles by allowing immediate transition between read and write operations without bus idle time. This is achieved through separate input/output registers, pipelined control, and ADV/LD-driven burst counter - enabling the next access to begin on the same clock edge that completes the prior one. No external OE timing control is needed.

What is the function of the ADV/LD pin in the 71T75802S150PFG?

The ADV/LD pin in the 71T75802S150PFG controls burst address generation: when sampled LOW at the rising CLK edge (with chip enabled), it loads a new external address into the internal register; when sampled HIGH, it advances the internal burst counter to generate the next sequential address. This enables fully pipelined burst reads/writes with minimal control overhead.

Is JTAG boundary scan supported on the 71T75802S150PFG, and which pins are used?

Yes, the 71T75802S150PFG supports IEEE 1149.1-compliant boundary scan. Pins TMS (pin 38), TDI (pin 39), TCK (pin 43), TDO (pin 42), and optional TRST (pin 41) are dedicated for JTAG. All five pins are routed to the TQFP-100 package and internally pulled - TMS/TDI/TCK/TRST to VDD, TDO to VSS - ensuring robust test initialization without external biasing.

71T75802S150PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71T75802S150PFG FAQ

1.How can I place an order for 71T75802S150PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75802S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75802S150PFG reliable?

The price and inventory of 71T75802S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S150PFG is usually 5 days.

3.What payment methods are accepted for 71T75802S150PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75802S150PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75802S150PFG?

71T75802S150PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75802S150PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75802S150PFG?

For technical support, including 71T75802S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S150PFG requirements.

6.How does Aetrix verify that 71T75802S150PFG is sourced from the original manufacturer or authorized distributors?

All 71T75802S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S150PFG meets industry standards.

7.What is the process for return or replacement of 71T75802S150PFG?

All 71T75802S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S150PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75802S150PFG part is unused and in its original packaging.

Return procedure for 71T75802S150PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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