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Renesas 71T75802S150PFG8

Part No.:
71T75802S150PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75802S150PFG8.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,796

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Product details

Overview

71T75802S150PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M x 18-bit organization (18 Mbit), 200 MHz operation, 3.2 ns clock-to-data access, zero bus turnaround architecture, and pipelined burst reads/writes. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75802S150PFG8 datasheet, 71T75802S150PFG8 pinout, 71T75802S150PFG8 application, or 71T75802S150PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 test interface availability.

Technical Context

The 71T75802S150PFG8 implements a fully synchronous, clock-edge-triggered architecture with registered address, control, and data paths. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD governs address load versus counter increment.

ZBT™ operation eliminates dead cycles between consecutive read/write operations via internally synchronized output buffer enable and single R/W control. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and includes a synchronous ZZ sleep mode for power reduction while retaining data.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization1M x 18-bit (18,874,368-bit capacity), configured as 1,048,576 words × 18 bits
Max Clock Frequency200 MHz - enables 5 ns cycle time for high-throughput buffering in packet-switching ASIC interfaces
Access Time3.2 ns clock-to-data - guarantees deterministic read latency for real-time traffic shaping logic
Supply VoltagesVDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O) - requires dual 2.5V rails with independent decoupling
Burst Capability4-word burst (linear/interleaved) - reduces address bus overhead in sequential access patterns like FIFO fill/empty
Operating Temperature–40°C to +85°C - qualified for industrial-grade deployment in base station and edge router environments
JTAG ComplianceIEEE 1149.1 - enables boundary-scan testing without external test fixtures on dense PCBs

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5313 drw 02ra (1M x 18 configuration).

Pin/Terminal Circuit Role Design Meaning
A0–A19Address InputsSynchronous 20-bit address bus; A0–A19 used for full 1M-word addressing (220 = 1,048,576)
CLKClock InputRising-edge-triggered master clock; all synchronous registers (address/control/data) sample on this edge
R/WRead/Write ControlSingle synchronous signal defining cycle type; determines direction two clocks after assertion
ADV/LDAdvance Burst / Load AddressLow = load new external address; High = increment internal burst counter - enables burst chaining
LBOLinear/Interleaved Burst OrderStatic input selecting burst sequence; low = linear (0,1,2,3), high = interleaved (0,2,1,3)
CE1, CE2, CE2Chip EnablesThree independent enables (CE1/CE2 active-low, CE2 active-high); any false deselects device in two cycles
OEOutput EnableAsynchronous; drives I/O pins to high-Z when high - usable for bus sharing without timing constraints
ZZSleep ModeSynchronous high-level entry into low-power retention mode; CLK gated internally, data retained
I/O0–I/O15, I/OP1–I/OP2Data I/O18-bit bidirectional synchronous data path (16 data + 2 parity pins); registered input/output paths
TMS, TDI, TCK, TDOJTAG Test InterfaceBoundary-scan controller pins compliant with IEEE 1149.1; TDO is output-only, others are inputs

Key Features

Feature Design Value
ZBTTM Zero Bus TurnaroundEliminates idle cycles between read/write transitions - enables back-to-back memory accesses at full 200 MHz throughput
Internally Synchronized OERemoves need for external OE timing control - simplifies system-level bus arbitration and reduces layout complexity
4-Word Pipelined BurstDelivers four consecutive data words per address load - cuts address bus transactions by 75% in sequential streaming
Individual Byte Write (BW1–BW2)Two active-low byte write enables for 9-bit subword writes - supports partial updates without read-modify-write overhead
Three Chip EnablesEnables seamless depth expansion across multiple devices - supports memory width scaling without glue logic
2.5V Core + I/O SupplyDual 2.5V domains isolate core logic noise from I/O signaling - improves signal integrity in mixed-voltage systems

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in a multi-gigabit switch ASIC pipeline.

IC Role / Device Role / Timing Role: High-speed synchronous buffer providing zero-turnaround read/write for ingress/egress queues.

Use Value: 3.2 ns access and 200 MHz clock sustain 4 Gbps sustained bandwidth with deterministic latency for QoS enforcement.

Use Scenario: Frame assembly/disassembly in SONET/SDH framer modules operating at OC-48 rates.

IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting simultaneous header processing and payload storage.

Use Value: 4-word burst mode reduces address bus toggling by 75%, lowering EMI and power in dense line card layouts.

Industrial PLC Data Logging Test Equipment Pattern Memory

Use Scenario: Capturing sensor timestamped samples at 100 kSPS for deterministic control loop execution.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory interfaced to FPGA-based real-time controller.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncooled enclosures.

Use Scenario: Storing stimulus/response vectors in automated boundary-scan test systems.

IC Role / Device Role / Timing Role: JTAG-configurable memory enabling in-system verification without physical probe access.

Use Value: IEEE 1149.1 compliance allows full boundary-scan visibility of I/O states during vector playback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1315KV181M x 18, 165 MHz max, 3.5 ns access, 3.3V core/I/O, no JTAGLower speed, higher voltage, no built-in test interface - suitable for cost-sensitive non-telecom designsSelect when 3.3V infrastructure exists and JTAG is unnecessary; verify timing margins at 165 MHz
AS7C31026B1M x 18, asynchronous interface, 15 ns access, 3.3V only, no burst or ZBTFully asynchronous operation, no pipelining or burst - fits legacy controllers lacking clock-synchronous timingChoose only for retrofit into non-pipelined systems; cannot replace 71T75802S150PFG8 in ZBT-timed pipelines

Compared with CY7C1315KV18 and AS7C31026B, the 71T75802S150PFG8 delivers 21% higher bandwidth (200 vs. 165 MHz), integrated JTAG for production testability, and true zero-turnaround operation essential for telecom packet buffers - making it irreplaceable in latency-critical synchronous architectures.

Availability

71T75802S150PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.

Supply support for 71T75802S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71T75802S150PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in packet-switching, baseband processing, and real-time control applications demanding deterministic burst performance.

FAQ

What memory organization does the 71T75802S150PFG8 support?

The 71T75802S150PFG8 is configured as 1M x 18-bit (1,048,576 words × 18 bits), delivering 18,874,368 total bits. It does not support the 512K x 36-bit variant - that configuration applies to the 71T75602 family member. Pinout and timing parameters are specific to the 1M x 18 structure in the 71T75802S150PFG8.

Does the 71T75802S150PFG8 support JTAG boundary scan?

Yes, the 71T75802S150PFG8 includes a fully compliant IEEE 1149.1 JTAG interface with TMS, TDI, TCK, and TDO pins. TRST is optional and available only in BGA packages; the TQFP-100 version (71T75802S150PFG8) omits TRST but retains full boundary-scan functionality via the four mandatory JTAG signals.

What is the function of the ADV/LD and LBO pins on the 71T75802S150PFG8?

On the 71T75802S150PFG8, ADV/LD controls burst sequencing: sampled low at CLK rise, it loads a new external address; sampled high, it advances the internal 4-word burst counter. LBO selects burst order - low enables linear (0,1,2,3), high enables interleaved (0,2,1,3) - and must remain static during operation.

Can the 71T75802S150PFG8 operate in industrial temperature range?

Yes, the 71T75802S150PFG8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly confirmed in the datasheet (Section 8, "Recommended Operating Temperature and Supply Voltage") and applies to the PFG8 suffix variant, ensuring reliability in base station, router, and factory automation environments.

How does the ZBTTM feature eliminate dead cycles in the 71T75802S150PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S150PFG8 removes dead cycles by synchronizing output buffer enable internally and using a single R/W control pin. This allows immediate transition from read to write (or vice versa) without bus float time - verified in functional timing diagrams where consecutive read/write cycles occur with no intervening idle clocks.

71T75802S150PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71T75802S150PFG8 FAQ

1.How can I place an order for 71T75802S150PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75802S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75802S150PFG8 reliable?

The price and inventory of 71T75802S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S150PFG8 is usually 5 days.

3.What payment methods are accepted for 71T75802S150PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75802S150PFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75802S150PFG8?

71T75802S150PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75802S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75802S150PFG8?

For technical support, including 71T75802S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S150PFG8 requirements.

6.How does Aetrix verify that 71T75802S150PFG8 is sourced from the original manufacturer or authorized distributors?

All 71T75802S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S150PFG8 meets industry standards.

7.What is the process for return or replacement of 71T75802S150PFG8?

All 71T75802S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S150PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75802S150PFG8 part is unused and in its original packaging.

Return procedure for 71T75802S150PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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