My Inquiry
My Account
Renesas 71T75802S166BG
- Part No.:
- 71T75802S166BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71T75802S166BG.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,505
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71T75802S166BG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M x 18-bit (18 Mbit) organization, 200 MHz operation (3.2 ns clock-to-data), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.
For engineers reviewing the 71T75802S166BG datasheet, 71T75802S166BG pinout, 71T75802S166BG application, or 71T75802S166BG equivalent, key selection criteria include ZBT™ burst timing compliance, 119-ball BGA (BG119) package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface, and 2.5V core/I/O voltage tolerance.
Technical Context
The 71T75802S166BG implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ mode eliminates dead cycles between consecutive reads and writes by overlapping bus control transitions with data transfer.
Burst operation uses an internal counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word sequences. The device integrates asynchronous OE for output tri-state control and synchronous CEN for clock gating, while ZZ enables low-power sleep mode with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M × 18-bit (18,874,368-bit capacity); supports depth expansion via three chip enables |
| Clock Frequency | 200 MHz maximum - enables 5 ns cycle time for high-throughput packet buffering |
| Access Time | 3.2 ns clock-to-data - fixed latency critical for deterministic real-time systems |
| Supply Voltage | VDD = 2.5 V ±5%, VDDQ = 2.5 V ±5% - dual-rail I/O/core separation reduces noise coupling |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded networking equipment |
| Burst Capability | 4-word interleaved or linear burst - reduces address setup overhead per data word |
| JTAG Interface | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST - enables boundary-scan testing in dense PCBs |
Pinout & Package
Packaged in a JEDEC-standard 119-ball grid array (BG119, BGG119), the 71T75802S166BG uses a 12 mm × 12 mm footprint with 0.8 mm ball pitch and thermal pad. Pin functions are validated per Renesas datasheet 5313, revision Sep.27.21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | Synchronous 20-bit address bus; sampled on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference for all synchronous operations |
| R/W | Read/Write Control | Determines access type at burst initiation; ignored during counter advancement (ADV/LD = HIGH) |
| ADV/LD | Burst Counter Control | LOW loads external address; HIGH increments internal burst counter - enables pipelined burst chaining |
| LBO | Burst Order Select | Static input: LOW = linear sequence, HIGH = interleaved - matches memory controller addressing mode |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes; all may be tied LOW for full-word writes |
| I/O0–I/O15, I/OP1–I/OP2 | Data I/O Bus | 18-bit bidirectional synchronous data path (16 data + 2 parity pins); registered on CLK edge |
| ZZ | Sleep Mode Input | Active-HIGH signal gates internal clock and reduces power consumption while retaining memory contents |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | Boundary-scan support per IEEE 1149.1; TRST is optional asynchronous reset (BGA only) |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between read/write transitions - increases effective bus utilization by up to 30% in burst-intensive applications |
| Internally Synchronized OE | Removes need for precise OE timing control - simplifies PCB layout and reduces timing closure effort |
| 4-Word Pipelined Burst | Delivers four consecutive data words per address load - cuts address bus traffic and improves throughput in sequential access patterns |
| Individual Byte Write Control | Enables selective 9-bit updates without disturbing adjacent bytes - essential for protocol header modification in packet processing |
| Power-Down Sleep Mode (ZZ) | Reduces active current to minimum while preserving data - extends uptime in battery-backed or thermally constrained systems |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.2 ns access and zero-turnaround burst reads/writes. Use Value: Enables line-rate processing of 10 GbE traffic by eliminating bus dead cycles during header inspection and payload modification. | Use Scenario: Caching voice codec parameters and signaling messages in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing reliable, jitter-free storage for real-time telephony control data. Use Value: Guarantees –40°C to +85°C operation and JTAG testability for field-deployed telecom infrastructure with >10-year service life. |
| Baseband Processor Memory | Industrial PLC Data Logging |
Use Scenario: Serving as instruction/data scratchpad in LTE/5G baseband ASICs handling OFDM symbol processing. IC Role / Device Role / Timing Role: 200 MHz ZBT SRAM interfacing directly to ASIC's burst-capable memory controller with ADV/LD-driven pipelining. Use Value: Matches ASIC's 5 ns cycle requirement and supports interleaved burst addressing to align with FFT/DFT memory access patterns. | Use Scenario: Buffering sensor acquisition data in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Robust SRAM with sleep mode (ZZ) and wide-temp support acting as nonvolatile write buffer before flash commit. Use Value: Prevents data loss during brownouts via guaranteed data retention in sleep mode and withstands vibration/EMI in industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18 | 1M × 18, 200 MHz, 2.5V, QDR-II+ architecture with separate read/write ports | Higher bandwidth but requires dual-port controller logic; no ZBT™ zero-turnaround behavior | Select when simultaneous read/write concurrency is required over strict ZBT™ timing determinism |
| AS7C31026B | 1M × 18, 166 MHz, 3.3V core/I/O, asynchronous OE, no JTAG or burst counter | Lacks pipelined burst, ZBTTM, and IEEE 1149.1 test interface; limited to commercial temp range | Select for cost-sensitive, non-industrial designs where 200 MHz and JTAG are not required |
Compared with CY7C1315KV18 and AS7C31026B, the 71T75802S166BG uniquely delivers ZBTTM timing determinism, integrated burst counter with LBO selection, and industrial-grade JTAG testability - making it optimal for telecom and networking systems demanding guaranteed sub-5 ns latency and field-test readiness.
Availability
71T75802S166BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71T75802S166BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly IDT) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71T75802S166BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed networking and telecom infrastructure where deterministic latency, burst efficiency, and industrial reliability are mandatory.
FAQ
What is the memory configuration supported by the 71T75802S166BG?
The 71T75802S166BG is configured as 1M × 18-bit (18,874,368 bits), delivering 18-bit-wide data access. It does not support the 512K × 36-bit configuration - that variant is implemented in the 71T75602 family. This fixed 1M × 18 organization ensures consistent timing and pin mapping for telecom and packet-processing applications.
Does the 71T75802S166BG support both linear and interleaved burst modes?
Yes, the 71T75802S166BG supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear addressing (A0, A1, A2, A3); when LBO = HIGH, it uses interleaved order (A0, A2, A1, A3). This flexibility allows alignment with different memory controller architectures.
What package type is used for the 71T75802S166BG?
The 71T75802S166BG uses a 119-ball grid array (BG119/BGG119) package with 0.8 mm pitch and exposed thermal pad. It is distinct from the 100-pin TQFP used by the 71T75602/71T75802 variants without the "S" suffix. The "S" in the part number denotes the BGA package variant.
How does the ZBTTM feature improve system performance in the 71T75802S166BG?
The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S166BG eliminates idle cycles between consecutive read and write operations. By overlapping bus control transitions with data transfers, it enables back-to-back accesses - increasing effective memory bandwidth by up to 30% compared to standard synchronous SRAMs in burst-intensive workloads.
Is JTAG boundary-scan supported on the 71T75802S166BG?
Yes, the 71T75802S166BG includes full IEEE 1149.1-compliant JTAG boundary-scan support with TMS, TDI, TCK, TDO, and optional TRST pins. This capability is implemented in the BG119 package and enables automated PCB test coverage for high-density telecom and networking assemblies.
71T75802S166BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71T75802S166BG FAQ
1.How can I place an order for 71T75802S166BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71T75802S166BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71T75802S166BG reliable?
The price and inventory of 71T75802S166BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S166BG is usually 5 days.
3.What payment methods are accepted for 71T75802S166BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75802S166BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71T75802S166BG?
71T75802S166BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71T75802S166BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71T75802S166BG?
For technical support, including 71T75802S166BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S166BG requirements.
6.How does Aetrix verify that 71T75802S166BG is sourced from the original manufacturer or authorized distributors?
All 71T75802S166BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S166BG meets industry standards.
7.What is the process for return or replacement of 71T75802S166BG?
All 71T75802S166BG units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S166BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71T75802S166BG part is unused and in its original packaging.
Return procedure for 71T75802S166BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71T75802S166BG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
