Renesas 71T75802S166PFG8

Overview

71T75802S166PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround between read/write cycles, and pipelined burst outputs. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and interleaved/linear 4-word bursts.

For engineers reviewing the 71T75802S166PFG8 datasheet, 71T75802S166PFG8 pinout, 71T75802S166PFG8 application, or 71T75802S166PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) tolerance, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 test interface availability.

Technical Context

The 71T75802S166PFG8 implements a fully synchronous, clock-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter supports both linear and interleaved 4-word sequences selected by the static LBO pin, while ADV/LD controls external address load versus internal counter advance.

ZBT™ operation eliminates dead cycles via internally synchronized output buffer enable-removing OE timing constraints-and uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion. The device integrates IEEE 1149.1 JTAG boundary scan with optional TRST, and supports power-down via synchronous ZZ input.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT document 5313 drw 02r (PKG100, 512K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1305KV18-200BZC and AS7C33128PFS-20BIN, the 71T75802S166PFG8 uniquely delivers ZBTTM timing, programmable burst order, and integrated JTAG - making it irreplaceable in high-performance, test-critical telecom and packet-processing systems where deterministic latency and production test coverage are mandatory.

Availability

71T75802S166PFG8 is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in 10G/25G Ethernet equipment, and baseband processing in wireless base stations requiring stable component supply across extended product lifecycles.

Supply support for 71T75802S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71T75802S166PFG8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet infrastructure and real-time control systems demanding predictable timing and robust testability.

FAQ

What memory organization does the 71T75802S166PFG8 support?

The 71T75802S166PFG8 supports 512K × 36-bit organization as its primary configuration, and can also operate in 1M × 18-bit mode. This dual-mode flexibility allows system designers to choose between wider data paths for burst efficiency or narrower buses for pin-count-constrained layouts - both validated in the same 71T75802S166PFG8 silicon.

Does the 71T75802S166PFG8 require external output enable (OE) control?

No. The 71T75802S166PFG8 features internally synchronized output buffer enable, eliminating the need for external OE timing control. OE may be tied low permanently in most applications. This simplifies timing closure and removes OE-related skew concerns - a key advantage of the ZBTTM architecture implemented in the 71T75802S166PFG8.

What is the function of the ADV/LD and LBO pins on the 71T75802S166PFG8?

On the 71T75802S166PFG8, ADV/LD determines whether the internal burst counter loads a new external address (ADV/LD = LOW) or advances to the next burst address (ADV/LD = HIGH). LBO selects burst sequence order: LOW = linear, HIGH = interleaved. Both pins are synchronous inputs critical to burst operation - their states directly define how the 71T75802S166PFG8 executes 4-word read/write sequences.

Is JTAG boundary scan supported on the 71T75802S166PFG8?

Yes. The 71T75802S166PFG8 includes full IEEE 1149.1-compliant JTAG boundary scan with TMS, TDI, TCK, TDO, and optional TRST pins. This enables structural testing of PCB interconnects and I/O pin functionality - essential for high-reliability deployments. The JTAG circuit is disabled by default unless explicitly enabled via pin strapping or initialization sequence in the 71T75802S166PFG8.

What power-down capability does the 71T75802S166PFG8 offer?

The 71T75802S166PFG8 supports synchronous sleep mode via the ZZ input: when ZZ is driven HIGH, the internal clock is gated and the device enters its lowest power state while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C), making the 71T75802S166PFG8 suitable for power-aware telecom and embedded systems requiring rapid wake-up with no data reload.