Renesas 71T75802S166PFGI
- Part No.:
- 71T75802S166PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71T75802S166PFGI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,713
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Product details
Overview
71T75802S166PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, pipelined outputs, and JTAG IEEE 1149.1 compliance - deployed in high-speed networking line cards and packet buffer subsystems.
For engineers reviewing the 71T75802S166PFGI datasheet, 71T75802S166PFGI pinout, 71T75802S166PFGI application, or 71T75802S166PFGI equivalent, key selection criteria include burst mode timing (linear/interleaved), byte-write granularity (BW1–BW4), industrial temperature support (–40°C to +85°C), TQFP-100 packaging, and ZBT™ dead-cycle elimination for back-to-back read/write transitions.
Technical Context
The 71T75802S166PFGI implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its internal burst counter enables 4-word interleaved or linear sequences controlled by LBO, while ADV/LD governs external address load versus counter increment.
ZBTTM functionality eliminates bus turnaround latency via internally synchronized output enable and pipelined data paths; the device supports depth expansion using three chip enables (CE1, CE2, CE2) and retains data in ZZ sleep mode with gated clock and guaranteed retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18 Mbit); supports 1M × 18-bit configuration via pin strapping |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time for high-throughput packet buffering |
| Access Time | 3.2 ns clock-to-data - defines minimum latency from CLK rise to valid Q output |
| Supply Voltage | VDD = 2.5 V ±5%, VDDQ = 2.5 V ±5% - dual-rail I/O/core separation reduces noise coupling |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems and telecom infrastructure |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus traffic and improves bandwidth efficiency |
| JTAG Interface | IEEE 1149.1 compliant - enables boundary-scan testing without external test fixtures |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 identifier corner marked; lead-free and RoHS-compliant (PFGI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit synchronous address bus; sampled on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference for all synchronous inputs and registered outputs |
| R/W | Read/Write Control | Synchronous signal determining cycle type; data transfer occurs two clocks later |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter - enables burst sequencing |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence |
| BW1–BW4 | Byte Write Enables | Four independent active-LOW enables for 9-bit byte writes - supports partial-word updates without masking |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH) for depth expansion and deselect control |
| ZZ | Sleep Mode Input | Active-HIGH synchronous entry into low-power sleep; clock gated, data retained |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path with registered input/output latches |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan pins; TRST optional asynchronous reset (TQFP includes TRST) |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates dead cycles between consecutive reads/writes - enables continuous bus utilization at 200 MHz |
| Pipelined Outputs | Internally synchronized OE eliminates need for external OE timing control - simplifies system-level timing closure |
| Individual Byte Write | BW1–BW4 allow selective 9-bit writes without disturbing adjacent bytes - critical for protocol header manipulation |
| 4-Word Burst Mode | Reduces address bus activity by 75% per burst - lowers system-level power and routing complexity |
| Industrial Temp Support | Validated operation from –40°C to +85°C - suitable for base station, router, and industrial controller deployments |
Applications
| Packet Buffering | Network Switch Fabric |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as first-level packet memory with zero-turnaround burst reads/writes. Use Value: 200 MHz clock rate and 3.2 ns access enable line-rate buffering for 10 GbE+ interfaces without pipeline stalls. | Use Scenario: Temporary storage of cell/packet metadata during crossbar arbitration in modular chassis switches. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing deterministic, pipelined access for fabric scheduler lookups. Use Value: ZBTTM eliminates bus turnaround delays, allowing back-to-back read-after-write operations essential for real-time scheduling decisions. |
| Telecom Line Cards | Industrial PLC Memory Expansion |
Use Scenario: Frame buffering and protocol translation in TDM-over-IP gateways and SDH/SONET add-drop multiplexers. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE partitioning) supporting simultaneous ingress/egress data streams. Use Value: Three chip enables (CE1/CE2/CE2) simplify depth expansion across multiple devices without external logic. | Use Scenario: Extending local data memory for motion control algorithms in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfacing directly with FPGA-based control processors via synchronous bus. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation during thermal cycling and power-save modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1305KV18-200BZI | 1M × 18-bit organization; 200 MHz; 1.8V core/I/O; different pinout and burst control | Targets lower-voltage systems; lacks JTAG and ZBTTM; requires OE management | Choose for 1.8V designs where ZBT is not required and JEDEC BGA footprint is acceptable |
| AS7C33128P-20BIN | 1M × 32-bit; 200 MHz; 3.3V supply; no burst counter or JTAG; asynchronous OE | Higher density but higher voltage; no zero-turnaround; limited industrial temp support | Choose only if 3.3V compatibility and maximum density outweigh ZBT timing advantages |
Compared with CY7C1305KV18-200BZI and AS7C33128P-20BIN, the 71T75802S166PFGI uniquely delivers ZBTTM, JTAG testability, and industrial temperature support in a 2.5V 512K×36 package - making it optimal for telecom and networking applications demanding deterministic, low-latency memory access.
Availability
71T75802S166PFGI is available at Aetrix Electronics and suitable for packet buffering, network switch fabric, and telecom line card applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.
Supply support for 71T75802S166PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications and computing infrastructure.
The 71T75802S166PFGI belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for high-speed networking equipment requiring zero bus turnaround, burst capability, and industrial reliability.
FAQ
What memory organization does the 71T75802S166PFGI support?
The 71T75802S166PFGI supports a 512K × 36-bit organization (18 Mbit total), and can be configured as 1M × 18-bit via pin strapping. This dual-mode flexibility allows system designers to optimize bus width and density based on controller interface requirements while maintaining full 71T75802S166PFGI compatibility.
Does the 71T75802S166PFGI support burst mode, and how is it controlled?
Yes, the 71T75802S166PFGI supports 4-word burst mode with selectable linear or interleaved sequences. The LBO pin selects burst order (LOW = linear, HIGH = interleaved), and ADV/LD controls whether an external address is loaded (LOW) or the internal counter is advanced (HIGH). All burst operations are fully synchronous and occur two clocks after command assertion.
What is the purpose of the ZZ pin on the 71T75802S166PFGI?
ZZ is the synchronous sleep mode input on the 71T75802S166PFGI. When driven HIGH, it gates the internal clock and reduces power consumption to its lowest level while guaranteeing data retention. This feature enables dynamic power management in systems like telecom line cards that require periodic low-power states without losing buffered packet data.
How many chip enable signals does the 71T75802S166PFGI have, and what are their polarities?
The 71T75802S166PFGI has three chip enable signals: CE1 and CE2 are active LOW, while CE2 is active HIGH. Chip selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This asymmetric enable scheme supports flexible depth expansion and hierarchical memory decoding without external logic inversion.
Is the 71T75802S166PFGI compatible with JTAG boundary-scan testing?
Yes, the 71T75802S166PFGI includes a full IEEE 1149.1-compliant JTAG interface with TMS, TDI, TCK, TDO, and optional TRST pins. The TAP controller supports boundary-scan testing of PCB interconnects and is functional in both TQFP and BGA packages - enabling in-system validation without physical probe access to the 71T75802S166PFGI.
71T75802S166PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71T75802S166PFGI FAQ
1.How can I place an order for 71T75802S166PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71T75802S166PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71T75802S166PFGI reliable?
The price and inventory of 71T75802S166PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S166PFGI is usually 5 days.
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4.How is shipping managed for 71T75802S166PFGI?
71T75802S166PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71T75802S166PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71T75802S166PFGI?
For technical support, including 71T75802S166PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S166PFGI requirements.
6.How does Aetrix verify that 71T75802S166PFGI is sourced from the original manufacturer or authorized distributors?
All 71T75802S166PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S166PFGI meets industry standards.
7.What is the process for return or replacement of 71T75802S166PFGI?
All 71T75802S166PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S166PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71T75802S166PFGI part is unused and in its original packaging.
Return procedure for 71T75802S166PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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