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Renesas 71T75802S166PFGI8
- Part No.:
- 71T75802S166PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71T75802S166PFGI8.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,234
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Product details
Overview
71T75802S166PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M x 18-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround, pipelined outputs, and JTAG IEEE 1149.1 compliance - deployed in high-speed network packet buffers and telecom line cards.
For engineers reviewing the 71T75802S166PFGI8 datasheet, 71T75802S166PFGI8 pinout, 71T75802S166PFGI8 application, or 71T75802S166PFGI8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW2), industrial temperature range (–40°C to +85°C), TQFP-100 packaging, and synchronous ZBT™ architecture eliminating dead cycles between read/write transitions.
Technical Context
The 71T75802S166PFGI8 implements a fully synchronous, pipelined memory interface with positive-edge-triggered registers for address, data, and control signals. Its on-chip burst counter enables 4-word interleaved or linear bursts initiated by ADV/LD and selected via LBO.
ZBT™ operation is achieved through internally synchronized output buffer enable (eliminating external OE timing constraints) and dual-cycle deselect logic. The device supports depth expansion via three chip enables (CE1, CE2, CE2) and low-power sleep mode via synchronous ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M x 18-bit (18,874,368-bit capacity), configured as 1,048,576 words × 18 bits |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time for sustained high-throughput data buffering |
| Access Time | 3.2 ns clock-to-data - guarantees deterministic read latency for real-time packet processing |
| Supply Voltage | VDD = 2.5 V ±5%, VDDQ = 2.5 V ±5% - dual-rail I/O/core supply ensures signal integrity at 200 MHz |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems and telecom infrastructure |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus overhead and improves bandwidth efficiency |
| Power Management | Synchronous ZZ input enables sleep mode with guaranteed data retention - cuts dynamic power during idle periods |
Pinout & Package
71T75802S166PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI8 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | Synchronous 20-bit address bus; sampled on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to rising edge |
| R/W | Read/Write Control | Synchronous command signal determining load-cycle direction; data transfer occurs two cycles later |
| ADV/LD | Burst Counter Control | HIGH advances internal burst counter; LOW loads new external address - enables pipelined burst sequencing |
| BW1, BW2 | Byte Write Enables | Active-low per-byte controls for 18-bit I/O (BW1: I/O[0:7], BW2: I/O[8:15]); supports partial writes without masking logic |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and bank selection |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence |
| ZZ | Sleep Mode Input | Synchronous HIGH gates internal clock and reduces power consumption while retaining memory contents |
| TMS, TDI, TCK, TDO | JTAG Boundary Scan | IEEE 1149.1-compliant test interface for production testing and system-level diagnostics |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates dead bus cycles between read/write transitions - enables back-to-back memory accesses without turnaround penalty |
| Pipelined Outputs | Internally synchronized output buffer enable removes need for external OE timing control - simplifies PCB layout and timing closure |
| 4-Word Burst Mode | Single address initiates four consecutive data transfers - increases effective bandwidth by up to 4× vs. non-burst operation |
| Individual Byte Write | Dedicated BW1/BW2 pins allow selective 8-bit or 9-bit writes to 18-bit data bus - avoids full-word overwrites and reduces bus contention |
| JTAG Boundary Scan | Fully compliant IEEE 1149.1 interface with TMS/TDI/TCK/TDO - supports automated test, debug, and system-level interconnect verification |
Applications
| Packet Buffering in Switch ASICs | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switching fabric. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.2 ns read access and zero-turnaround burst writes. Use Value: Enables line-rate packet processing at 200 MHz clock speed while minimizing buffer underflow/overflow in bursty traffic patterns. | Use Scenario: Frame buffering and header manipulation in OC-192/STM-64 SONET/SDH line interface modules. IC Role / Device Role / Timing Role: Synchronous ZBT™ SRAM providing pipelined 4-word bursts to match serial framer data rates and reduce CPU overhead. Use Value: Eliminates bus turnaround dead cycles during mixed read/write operations required for real-time frame reassembly and error correction. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
Use Scenario: Cyclic acquisition and timestamped storage of sensor data streams in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM (–40°C to +85°C) serving as deterministic-access scratchpad for time-critical I/O scanning routines. Use Value: Guarantees reliable operation across wide ambient ranges while supporting burst-mode logging to minimize CPU polling frequency. | Use Scenario: Temporary storage of uncompressed DICOM image frames during real-time MRI or CT scan reconstruction pipelines. IC Role / Device Role / Timing Role: Low-latency 18-Mbit SRAM buffering full-frame pixel data for parallel processing engines with strict timing deadlines. Use Value: Delivers 3.2 ns clock-to-data access and pipelined outputs to sustain >1.6 GB/s throughput required for multi-slice volumetric rendering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-200BZI | 200 MHz QDR II+ SRAM, 512K × 18, differential clock inputs, no ZBT™ architecture | Requires external OE control and lacks zero-turnaround; suited for QDR-optimized systems with separate read/write ports | Select when dual-port bandwidth outweighs ZBT™ bus efficiency; verify layout compatibility with differential CLK pair |
| AS7C31026B-20JCIN | 200 MHz async SRAM, 1M × 16, single VDD, no burst mode or JTAG | No pipelining, no burst counter, asynchronous interface increases timing margin requirements and limits max throughput | Choose only for cost-sensitive legacy designs where synchronous features are unused; not drop-in compatible |
Compared with CY7C1315KV18-200BZI and AS7C31026B-20JCIN, the 71T75802S166PFGI8 uniquely delivers ZBTTM zero-turnaround operation, integrated burst counter, and JTAG testability - making it optimal for high-efficiency, testable, industrial-grade synchronous memory subsystems.
Availability
71T75802S166PFGI8 is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71T75802S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions.
The 71T75802S166PFGI8 belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for high-bandwidth, low-latency applications in networking, telecommunications, and industrial control where deterministic timing and bus efficiency are critical.
FAQ
What memory configuration does the 71T75802S166PFGI8 support?
The 71T75802S166PFGI8 is configured as 1M x 18-bit (1,048,576 words × 18 bits), delivering 18,874,368 total bits of synchronous SRAM. It is distinct from the 512K x 36 variant (71T75602) and is optimized for 18-bit data buses common in telecom framer interfaces and DSP co-processors. This configuration is fixed per the PFGI8 package variant.
Does the 71T75802S166PFGI8 support burst mode, and how is it controlled?
Yes, the 71T75802S166PFGI8 supports 4-word burst mode using its on-chip burst counter. Burst sequencing is controlled by the ADV/LD pin (HIGH advances counter, LOW loads new address) and LBO pin (LOW = linear, HIGH = interleaved). Burst reads/writes occur two clock cycles after command assertion, with data delivered in pipelined fashion without dead cycles.
What is the role of the ZZ pin on the 71T75802S166PFGI8?
The ZZ pin on the 71T75802S166PFGI8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in low-power sleep mode while guaranteeing data retention. It is not an asynchronous reset - operation resumes on next valid CLK edge after ZZ returns LOW, with no initialization delay.
How many byte write enables does the 71T75802S166PFGI8 provide, and what is their function?
The 71T75802S166PFGI8 provides two active-low byte write enables: BW1 controls I/O[0:7] (first byte), and BW2 controls I/O[8:15] (second byte). Since it is a 1M x 18 device, there is no BW3/BW4 functionality - those pins are NC in this configuration. This allows precise 8-bit or 9-bit (I/O[0:8] not supported) partial writes to the 18-bit bus.
Is the 71T75802S166PFGI8 pin-compatible with the 71T75602 series?
No, the 71T75802S166PFGI8 is not pin-compatible with the 71T75602 (512K x 36) despite sharing the same TQFP-100 package. Pin assignments differ significantly - e.g., 71T75802 uses A0–A19 (20 address lines) and BW1/BW2 only, while 71T75602 uses A0–A18 and BW1–BW4. Signal mapping, I/O pin count, and burst control logic are configuration-specific and require board-level redesign.
71T75802S166PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71T75802S166PFGI8 FAQ
1.How can I place an order for 71T75802S166PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71T75802S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71T75802S166PFGI8 reliable?
The price and inventory of 71T75802S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S166PFGI8 is usually 5 days.
3.What payment methods are accepted for 71T75802S166PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75802S166PFGI8 transactions.
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4.How is shipping managed for 71T75802S166PFGI8?
71T75802S166PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71T75802S166PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71T75802S166PFGI8?
For technical support, including 71T75802S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S166PFGI8 requirements.
6.How does Aetrix verify that 71T75802S166PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71T75802S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S166PFGI8 meets industry standards.
7.What is the process for return or replacement of 71T75802S166PFGI8?
All 71T75802S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S166PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71T75802S166PFGI8 part is unused and in its original packaging.
Return procedure for 71T75802S166PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71T75802S166PFGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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