Renesas 71T75802S200BGGI

Overview

71T75802S200BGGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit or 1M × 18-bit configurable memory organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75802S200BGGI datasheet, 71T75802S200BGGI pinout, 71T75802S200BGGI application, or 71T75802S200BGGI equivalent, key selection criteria include ZBT™ burst timing compliance, 119-ball BGA (BGG) package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface, and 2.5V I/O supply (VDDQ) decoupling requirements.

Technical Context

The 71T75802S200BGGI implements a fully synchronous, clock-edge-triggered architecture with registered address, control, and data paths. Its on-chip burst counter supports 4-word linear or interleaved sequences controlled by the static LBO pin, while ADV/LD determines whether external addresses are loaded or internal counter advanced.

ZBT™ operation eliminates dead cycles between consecutive reads/writes via internally synchronized output buffer enable and single R/W control - eliminating need for external OE management. Sleep mode (ZZ input) gates internal clock and guarantees data retention at minimal power.

Key Specifications

Pinout & Package

Packaged in a 119-ball fine-pitch BGA (BGG119) per JEDEC MO-205AC, with 1.0 mm ball pitch and 13 × 13 array. Pinout optimized for signal integrity: dedicated VDD/VDDQ/VSS balls distributed across perimeter and center, differential JTAG pins isolated in corner quadrant, and I/O banks grouped by byte (I/O[0:7]+I/OP1, etc.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C1315KV18-200BZI and AS7C331024B-200BIN, the 71T75802S200BGGI uniquely delivers ZBT™-optimized zero-turnaround operation, integrated burst counter, and industrial-temperature 119-ball BGA packaging - making it irreplaceable in latency-critical, burst-oriented telecom and networking datapaths.

Availability

71T75802S200BGGI is available at Aetrix Electronics and suitable for packet buffering, network processor caching, and telecom line card memory applications requiring stable component supply, long-term industrial temperature qualification, and JTAG-testable BGA packaging.

Supply support for 71T75802S200BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF power solutions for communications infrastructure.

The 71T75802S200BGGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-oriented memory subsystems in network processors, switches, and baseband units where deterministic timing and bus efficiency are critical.

FAQ

What memory configurations does the 71T75802S200BGGI support?

The 71T75802S200BGGI supports two pin-compatible memory organizations: 512K × 36-bit (18,874,368 bits) and 1M × 18-bit (18,874,368 bits), selected via address pin decoding (A18/A19 usage). Both configurations operate at 200 MHz with identical timing and ZBT™ functionality - enabling flexible board design without hardware changes.

How does the ZBTTM feature improve system performance in the 71T75802S200BGGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S200BGGI eliminates mandatory idle cycles between consecutive read and write operations. By synchronizing output buffer enable internally and using a single R/W control, the 71T75802S200BGGI achieves continuous bus utilization - increasing effective bandwidth by up to 33% in mixed-access workloads typical of packet buffering.

What is the role of the ADV/LD and LBO pins in the 71T75802S200BGGI?

In the 71T75802S200BGGI, ADV/LD controls burst sequencing: LOW loads a new external address, HIGH advances the internal 4-word burst counter. LBO selects burst order - LOW enables linear (0,1,2,3), HIGH enables interleaved (0,2,1,3) - matching CPU cache line fetch patterns. Both are synchronous inputs critical to burst-mode efficiency.

Does the 71T75802S200BGGI support JTAG boundary scan, and which pins are involved?

Yes, the 71T75802S200BGGI supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (ball U6) implement the test interface. All JTAG pins have internal pull-ups except TRST (pull-up) and ZZ (pull-down), enabling robust test access without external biasing in the 119-ball BGA layout.

What power supply requirements must be met for reliable operation of the 71T75802S200BGGI?

The 71T75802S200BGGI requires two independent 2.5 V ±5% supplies: VDD (core logic) and VDDQ (I/O drivers), each with dedicated decoupling. VDD and VDDQ may be supplied from the same regulator only if ripple is <30 mV p-p and transient response meets tR/tF < 2 ns. Ground planes must be solid and split only between analog/digital domains - never under the BGA footprint.