Renesas 71T75802S200BGGI8

Overview

71T75802S200BGGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit or 1M × 18-bit configurable memory organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71T75802S200BGGI8 datasheet, 71T75802S200BGGI8 pinout, 71T75802S200BGGI8 application, or 71T75802S200BGGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, 119-ball BGA (BGG) package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface, and 2.5V I/O supply (VDDQ) decoupling requirements.

Technical Context

The 71T75802S200BGGI8 implements a fully synchronous, clock-edge-triggered architecture with dual-register pipeline stages: address/control inputs latched on rising CLK edges, and data I/O registered for deterministic 2-cycle latency. Its ZBT™ core eliminates dead cycles between consecutive reads/writes by overlapping bus turnaround with internal memory access.

Burst sequencing is controlled via LBO (Linear/Interleaved) and ADV/LD (Advance/Load), enabling four-word bursts per address. The device integrates a boundary-scan JTAG TAP controller compliant with IEEE 1149.1, with optional TRST, and supports power-down via synchronous ZZ input while retaining data.

Key Specifications

Pinout & Package

71T75802S200BGGI8 is packaged in a 119-ball grid array (BGA) with 1.0 mm ball pitch, JEDEC-standard footprint (BGG119), and integrated thermal pad. Pin functions are defined per the BG119 configuration for 512K × 36 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1305KV18-200BZI and AS7C33128P-20BIN, the 71T75802S200BGGI8 uniquely delivers ZBT™-optimized burst control, integrated IEEE 1149.1 testability, and synchronous power-down - making it optimal for new industrial networking designs demanding deterministic latency and test coverage.

Availability

71T75802S200BGGI8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card caches, baseband processor memory, and industrial PLC data log applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 71T75802S200BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75802S200BGGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-processing systems where deterministic timing and burst efficiency are critical.

FAQ

What memory configurations does the 71T75802S200BGGI8 support?

The 71T75802S200BGGI8 supports two configurable memory organizations: 512K × 36 bits (18,874,368 bits total) and 1M × 18 bits. Configuration is determined by address decoding and pin strapping - no internal mode register. In 512K × 36 mode, A0–A18 are used; A19 is NC. In 1M × 18 mode, A0–A19 are active, and I/O pins I/O16–I/O31 and I/OP3–I/OP4 become NC.

How does the ZBTTM feature improve system performance in the 71T75802S200BGGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71T75802S200BGGI8 eliminates idle cycles between consecutive read and write operations by overlapping bus direction control with internal memory access. This allows immediate transition from a write burst to a read burst (or vice versa) without waiting for bus stabilization, increasing effective bandwidth by up to 33% in burst-intensive applications like packet buffering.

What is the function of the ADV/LD and LBO pins on the 71T75802S200BGGI8?

On the 71T75802S200BGGI8, ADV/LD controls burst sequencing: sampled LOW at rising CLK, it loads a new external address; sampled HIGH, it advances the internal burst counter. LBO selects burst order: LOW enables linear sequence (A0, A1, A2, A3), HIGH enables interleaved (A0, A2, A1, A3). Both are synchronous inputs critical for deterministic burst behavior in pipelined systems.

Does the 71T75802S200BGGI8 support JTAG boundary-scan testing?

Yes, the 71T75802S200BGGI8 includes a full IEEE 1149.1-compliant JTAG boundary-scan interface with TMS, TDI, TCK, TDO, and optional TRST pins. All JTAG pins have internal pull-ups (except TRST, which is pull-up, and ZZ, which is pull-down), enabling in-system testability without external biasing. The TAP controller is functional in both commercial and industrial temperature grades.

What power supply requirements must be met for reliable operation of the 71T75802S200BGGI8?

The 71T75802S200BGGI8 requires two regulated 2.5 V supplies: VDD (core logic, ±5%) and VDDQ (I/O drivers, ±5%). These must be independently decoupled per datasheet guidelines. VDD and VDDQ may ramp simultaneously; no strict sequencing is required, but no I/O pin voltage may exceed VDDQ during power-up. Ground (VSS) connections must be low-inductance and distributed across the BGA thermal pad and perimeter balls.