Renesas 71T75802S200PFG

Overview

71T75802S200PFG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M x 18-bit organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, pipelined outputs, and JTAG IEEE 1149.1 compliance - deployed in high-speed network packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71T75802S200PFG datasheet, 71T75802S200PFG pinout, 71T75802S200PFG application, or 71T75802S200PFG equivalent, key selection criteria include burst mode timing (linear/interleaved), byte-write granularity (BW1–BW2 for 18-bit I/O), industrial temperature support (–40°C to +85°C), TQFP-100 packaging, and ZBT™ bus efficiency in backplane interface designs.

Technical Context

The 71T75802S200PFG implements a fully synchronous, rising-edge-triggered architecture with registered address, control, and data paths. Its on-chip burst counter supports 4-word interleaved or linear sequences controlled by the static LBO pin, while ADV/LD determines whether external addresses are loaded or the internal counter is advanced.

ZBT™ operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and pipelined register staging - all synchronous inputs (except OE) are sampled on CLK rising edges, with data valid two cycles after address/control registration.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18 and AS7C31026B, the 71T75802S200PFG delivers superior bus utilization via ZBT™, deterministic 2-cycle latency, and industrial-grade power management - making it optimal for cost-sensitive, high-throughput packet buffering where controller simplicity matters.

Availability

71T75802S200PFG is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, baseband processing units, and industrial protocol gateways requiring stable component supply across extended product lifecycles.

Supply support for 71T75802S200PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions.

The 71T75xx family was designed specifically for zero-latency, high-bandwidth memory subsystems in communications infrastructure - emphasizing ZBT™ efficiency, burst predictability, and industrial reliability.

FAQ

What memory organization does the 71T75802S200PFG support?

The 71T75802S200PFG is configured as 1M x 18-bit (18,874,368 bits total), using address lines A0–A19. It is distinct from the 512K x 36 variant (71T75602) - both share the same 71T75802 family silicon but differ in internal memory mapping and pin assignment for I/O width.

Does the 71T75802S200PFG support burst mode, and how is it controlled?

Yes, the 71T75802S200PFG supports 4-word burst mode via its on-chip counter. Burst sequence order (linear or interleaved) is selected by the static LBO pin. The ADV/LD signal controls whether a new external address is loaded (ADV/LD = LOW) or the internal counter is advanced (ADV/LD = HIGH), enabling efficient sequential access without repeated address bus cycles.

What is the function of the ZZ pin on the 71T75802S200PFG?

The ZZ pin on the 71T75802S200PFG is an active-high synchronous sleep mode input. When asserted HIGH, it gates the internal clock and places the device in ultra-low-power state while guaranteeing data retention. This feature is critical for power-constrained telecom modules that require periodic deep-sleep operation without data loss.

How many byte write enables does the 71T75802S200PFG provide, and what is their scope?

The 71T75802S200PFG provides two active-low byte write enables: BW1 and BW2. These control 9-bit subwords within the 18-bit data path (I/O0–I/O15 + I/OP1/I/OP2). BW1 enables the lower 9 bits; BW2 enables the upper 9 bits - allowing partial writes without read-modify-write cycles, essential for protocol header updates.

Is the 71T75802S200PFG compatible with industrial temperature requirements?

Yes, the 71T75802S200PFG is rated for industrial temperature operation from –40°C to +85°C. This qualification is explicitly confirmed in the datasheet's "Recommended Operating Temperature and Supply Voltage" table and applies to the S200 speed grade, making it suitable for deployment in outdoor telecom cabinets and factory-floor networking equipment.