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Renesas 71T75802S200PFG8
- Part No.:
- 71T75802S200PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71T75802S200PFG8.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,608
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Product details
Overview
71T75802S200PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization, supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround between read/write cycles, and pipelined burst outputs. It serves as high-speed buffer/cache in network packet processors and telecom line cards requiring deterministic latency.
For engineers reviewing the 71T75802S200PFG8 datasheet, 71T75802S200PFG8 pinout, 71T75802S200PFG8 application, or 71T75802S200PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) requirements, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 test interface availability.
Technical Context
The 71T75802S200PFG8 implements a fully synchronous, clock-edge-triggered architecture with registered address, data, and control paths. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD governs address load versus counter increment.
ZBTTM functionality eliminates dead cycles via synchronized output buffer enable and single R/W control, while three chip enables (CE1, CE2, CE2) and individual byte write (BW1–BW4) support depth expansion and granular memory updates without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18 Mbit); supports 1M × 18-bit mode via configuration |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time for high-throughput packet buffering |
| Access Time | 3.2 ns clock-to-data - guarantees deterministic read latency for real-time systems |
| Supply Voltages | VDD = 2.5 V ±5% (core); VDDQ = 2.5 V ±5% (I/O) - requires dual 2.5V rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded networking hardware |
| Burst Capability | 4-word interleaved/linear burst - reduces address bus traffic in sequential access patterns |
| JTAG Interface | IEEE 1149.1 compliant - enables boundary-scan testing and in-system debug |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free (Pb-free) and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master timing reference for all synchronous registers |
| A0–A18 | Address inputs | 19-bit address bus for 512K × 36 configuration; A19 unused in this variant |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data path with registered input/output; P1–P4 are parity or byte-enable pins |
| R/W | Read/Write control | Single synchronous signal defining cycle type; no separate RD/WR pins required |
| ADV/LD | Address advance/load | Low = load external address; High = increment internal burst counter |
| LBO | Burst order select | Static input: Low = linear burst; High = interleaved burst sequence |
| CE1, CE2, CE2 | Chip enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) for multi-chip depth expansion |
| BW1–BW4 | Byte write enables | Four active-low signals controlling 9-bit byte writes; all may be tied low for full-word writes |
| ZZ | Sleep mode | Active-high synchronous entry into low-power retention mode; data retained |
| TMS, TDI, TCK, TDO | JTAG test interface | Boundary-scan pins compliant with IEEE 1149.1; TRST optional (not on TQFP) |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes - increases effective bus utilization by up to 33% in mixed-access workloads |
| Pipelined Output Registers | Two-cycle output latency ensures deterministic timing alignment with system clock - simplifies timing closure in FPGA-ASIC interfaces |
| Internally Synchronized OE | Output enable is internally synchronized - removes need for external OE timing control or skew compensation |
| Individual Byte Write Control | Four independent BWx signals allow selective 9-bit writes - avoids read-modify-write overhead in partial updates |
| 200 MHz Burst Performance | Supports sustained 4-word bursts at 200 MHz - delivers 2.88 Gbps peak bandwidth (36 bits × 200 MHz) |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.2 ns read access. Use Value: Enables wire-speed processing of 10 Gbps+ Ethernet frames without packet loss due to buffer latency jitter. | Use Scenario: Caching protocol state tables and signaling message queues in SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: Synchronous burst-capable memory providing predictable access for real-time control plane operations. Use Value: Supports 4-word interleaved burst reads to feed DSP-based framer logic without stalling on address setup. |
| Baseband Processor Memory | Industrial PLC Data Logging |
Use Scenario: Serving as shared instruction/data scratchpad between multiple DSP cores in wireless baseband subsystems. IC Role / Device Role / Timing Role: ZBT™ SRAM interfacing directly to TI C6000 or ADI SHARC buses with zero turnaround between core-initiated reads/writes. Use Value: Reduces inter-core synchronization overhead by eliminating bus idle cycles during context switching. | Use Scenario: Buffering sensor acquisition data streams in ruggedized programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-temperature-rated SRAM with JTAG testability for long-life, field-deployed automation hardware. Use Value: Guarantees data integrity across –40°C to +85°C ambient range and supports in-circuit validation via boundary scan. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-200BZI | 1M × 18-bit only; no 512K × 36 mode; 200 MHz max; different pinout (165-ball BGA) | Requires PCB redesign; lacks TQFP-100 option and ZZ sleep mode | Select only if 1M × 18 configuration suffices and BGA packaging is acceptable |
| AS7C331024B-20JIN | Asynchronous SRAM; no ZBT™, burst, or pipelining; 20 ns access; 3.3V only | Cannot replace in ZBT™-dependent designs; introduces timing uncertainty and bus turnaround penalties | Use only in legacy cost-sensitive systems where deterministic burst timing is not required |
Compared with CY7C1315KV18-200BZI and AS7C331024B-20JIN, the 71T75802S200PFG8 uniquely delivers 512K × 36 ZBT™ operation in TQFP-100 with industrial temp rating and JTAG - making it irreplaceable for new designs requiring zero-turnaround burst performance in space-constrained telecom modules.
Availability
71T75802S200PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71T75802S200PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71T75802S200PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround, burst-oriented applications in high-speed networking and telecom equipment where deterministic latency and bandwidth efficiency are critical.
FAQ
What is the memory organization supported by the 71T75802S200PFG8?
The 71T75802S200PFG8 supports a 512K × 36-bit organization (18 Mbit total), and can also operate in 1M × 18-bit mode depending on address decoding and configuration. This dual-mode capability allows flexible system integration in both wide-data and deep-memory architectures without changing the physical device.
Does the 71T75802S200PFG8 require external output enable (OE) control?
No - the 71T75802S200PFG8 features an internally synchronized output buffer enable, eliminating the need for precise external OE timing. OE is asynchronous but can be tied low for continuous read operation; its state does not affect internal pipelining or ZBTTM behavior, simplifying interface design to FPGAs or ASICs.
What burst modes does the 71T75802S200PFG8 support, and how are they selected?
The 71T75802S200PFG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved (A0, A2, A1, A3). This selection is static and must remain stable during burst execution.
Is the 71T75802S200PFG8 compatible with industrial temperature requirements?
Yes - the 71T75802S200PFG8 is rated for industrial temperature operation from –40°C to +85°C, verified per manufacturer specifications. This makes it suitable for deployment in uncontrolled environments such as outdoor telecom cabinets, factory-floor PLCs, and transportation infrastructure equipment.
What power-saving features does the 71T75802S200PFG8 include?
The 71T75802S200PFG8 includes a synchronous sleep mode activated by the ZZ pin (active HIGH), which gates the internal clock and reduces power consumption to minimum while retaining memory contents. It also supports clock enable (CEN) for dynamic clock suspension during idle periods - both features aid thermal management in dense line cards.
71T75802S200PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71T75802S200PFG8 FAQ
1.How can I place an order for 71T75802S200PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71T75802S200PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71T75802S200PFG8 reliable?
The price and inventory of 71T75802S200PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S200PFG8 is usually 5 days.
3.What payment methods are accepted for 71T75802S200PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75802S200PFG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71T75802S200PFG8?
71T75802S200PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71T75802S200PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71T75802S200PFG8?
For technical support, including 71T75802S200PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S200PFG8 requirements.
6.How does Aetrix verify that 71T75802S200PFG8 is sourced from the original manufacturer or authorized distributors?
All 71T75802S200PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S200PFG8 meets industry standards.
7.What is the process for return or replacement of 71T75802S200PFG8?
All 71T75802S200PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S200PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71T75802S200PFG8 part is unused and in its original packaging.
Return procedure for 71T75802S200PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71T75802S200PFG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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