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Renesas 71T75802S200PFGI
- Part No.:
- 71T75802S200PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71T75802S200PFGI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,802
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Product details
Overview
71T75802S200PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M x 18-bit (18 Mbit) organization, 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.
For engineers reviewing the 71T75802S200PFGI datasheet, 71T75802S200PFGI pinout, 71T75802S200PFGI application, or 71T75802S200PFGI equivalent, key selection criteria include its 200 MHz synchronous timing, 4-word interleaved/linear burst capability, JTAG IEEE 1149.1 compliance, industrial temperature support (–40°C to +85°C), and TQFP-100 packaging with 2.5V core/I/O supplies.
Technical Context
The 71T75802S200PFGI implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ mode eliminates dead cycles between consecutive reads and writes via internal burst counter management and ADV/LD-controlled address loading or incrementing.
It supports dual-mode burst sequencing (linear or interleaved) selected by static LBO input, features three chip enables (CE1/CE2/CE2) for depth expansion, and integrates boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) for testability - all operating at 2.5V with separate VDD (core) and VDDQ (I/O) supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M x 18-bit (18,874,368-bit capacity), supporting high-bandwidth data paths in packet buffering applications |
| Clock Frequency | 200 MHz maximum - enables 5 ns cycle time for real-time telecom and networking systems |
| Access Time | 3.2 ns clock-to-data (tCD) - guarantees deterministic output timing for pipelined system designs |
| Supply Voltages | VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O) - ensures signal integrity and compatibility with 2.5V logic families |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for deployment in base station and industrial control environments |
| Burst Capability | 4-word burst (interleaved or linear) - reduces address bus overhead and improves throughput in sequential access patterns |
| JTAG Support | IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST) - enables in-system test and debug without external probes |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI suffix). Pinout validated per IDT document 5313 drw 02ra for 1M x 18 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge synchronous reference for all registered inputs/outputs; defines tCD and tCO timing windows |
| A0–A19 | Address inputs | 20-bit address bus for 1M-word addressing; sampled synchronously on CLK rise with ADV/LD low |
| I/O0–I/O15, I/OP1–I/OP2 | Data I/O bus | 18-bit bidirectional synchronous data path (16 data + 2 parity bits); registered on CLK edge |
| CE1, CE2, CE2 | Chip enable controls | Three independent enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and deselect sequencing |
| R/W | Read/write control | Synchronous signal determining access type; latched with address to initiate load cycle two clocks later |
| ADV/LD | Burst address control | High = advance internal burst counter; low = load new external address - enables seamless burst chaining |
| LBO | Burst order select | Static input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence per IEEE Std 1149.1 |
| ZZ | Sleep mode input | Active-high synchronous entry into low-power retention mode; preserves data while gating internal clock |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - enables back-to-back memory accesses without bus idle time |
| Internally synchronized OE | Output enable is asynchronous but internally synchronized; allows fixed low OE tie for simplified board design |
| Single R/W control pin | Reduces control bus complexity versus separate RD/WR signals - simplifies FPGA/CPU interface logic |
| 4-word burst counter | Generates four sequential addresses from one load cycle - cuts address bus activity by 75% in streaming applications |
| Individual byte write (BW1–BW2) | Two 9-bit byte write enables for 18-bit configuration - enables partial-word updates without read-modify-write overhead |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in ASIC-based switch fabric buffers. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.2 ns tCD and zero-turnaround burst reads/writes. Use Value: Enables full-line-rate 10Gbps packet processing by eliminating bus turnaround stalls during header inspection and payload reassembly. |
Use Scenario: Caching protocol translation tables and signaling message queues in 3G/4G baseband processing units. IC Role / Device Role / Timing Role: Synchronous cache memory interfacing directly with DSP or ARM-based control processors via 200 MHz bus. Use Value: Supports real-time jitter-sensitive operations (e.g., SS7/MAP signaling) with guaranteed industrial-temp stability and JTAG testability. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
|
Use Scenario: Capturing sensor timestamp sequences and motion control event logs in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile-buffered SRAM storing time-critical I/O snapshots with sleep-mode (ZZ) power reduction between cycles. Use Value: Maintains data integrity across wide temperature swings (–40°C to +85°C) while enabling low-power standby during idle intervals. |
Use Scenario: Holding stimulus/response vectors in automated test equipment (ATE) pattern generators for semiconductor validation. IC Role / Device Role / Timing Role: Deterministic-access memory delivering precise 200 MHz burst sequences to DUT interface logic. Use Value: Ensures sub-5 ns timing correlation between pattern generation and measurement capture - critical for high-speed IO characterization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71T75602S200PFGI | 512K x 36-bit organization, same 200 MHz speed, identical TQFP-100 package and pinout | Higher data width (36-bit) suits wider bus architectures; requires different address decoding (A0–A18 vs A0–A19) | Select when system bus width matches 36-bit interface and memory density requirement is 18 Mbit in x36 format |
| AS7C3256A-20TIN | Commercial-grade 32K x 8-bit async SRAM, no ZBT, no burst, no JTAG, 20 ns access, SOIC-28 | Lacks pipelining, burst, and zero-turnaround - unsuitable for high-throughput streaming; limited to simple storage | Only viable for cost-sensitive, non-real-time applications where 200 MHz sync timing and burst capability are unnecessary |
Compared with 71T75802S200PFGI, the 71T75602S200PFGI offers identical timing and package but trades depth for width (1Mx18 → 512Kx36), while the AS7C3256A-20TIN lacks all advanced ZBT features and cannot support deterministic high-speed packet buffering.
Availability
71T75802S200PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71T75802S200PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71T75802S200PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency, high-throughput buffering in telecom, networking, and real-time embedded systems.
FAQ
What is the memory organization and total capacity of the 71T75802S200PFGI?
The 71T75802S200PFGI is configured as 1M x 18-bit, delivering 18,874,368 bits (18 Mbit) of synchronous SRAM. This organization supports 18-bit data buses and uses address lines A0–A19 for full 1M-word addressing - confirmed in the functional description and pin configuration diagrams for the PKG100 1M x 18 variant.
Does the 71T75802S200PFGI support burst mode, and how is burst order selected?
Yes, the 71T75802S200PFGI supports 4-word burst mode using an on-chip counter. Burst order is selected via the LBO pin: LBO = low enables linear sequence (A0, A1, A2, A3), while LBO = high selects interleaved order (A0, A2, A1, A3). This behavior is defined in the Interleaved and Linear Burst Sequence Tables and validated in timing diagrams.
What are the supply voltage requirements for the 71T75802S200PFGI?
The 71T75802S200PFGI requires two independent 2.5V supplies: VDD = 2.5V ±5% for core logic and VDDQ = 2.5V ±5% for I/O drivers. These values are specified in the Recommended DC Operating Conditions table and enforced across commercial (0°C to +70°C) and industrial (–40°C to +85°C) grades.
Is JTAG boundary scan supported on the 71T75802S200PFGI, and which pins are used?
Yes, the 71T75802S200PFGI includes IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to dedicated balls/pins in both TQFP-100 and BGA-119 packages - explicitly documented in Pin Definitions and Configuration drawings (e.g., 5313 tbl 02, tbl 25a/b).
How does the Zero Bus Turnaround (ZBT™) feature operate in the 71T75802S200PFGI?
ZBT™ eliminates dead cycles between consecutive read and write operations by overlapping bus control transitions. When ADV/LD is high, the internal burst counter advances and R/W is ignored - allowing immediate continuation of burst transfers without bus release/reacquisition. This is implemented in hardware and verified in the Synchronous Truth Table and Functional Timing Diagrams.
71T75802S200PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71T75802S200PFGI FAQ
1.How can I place an order for 71T75802S200PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71T75802S200PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71T75802S200PFGI reliable?
The price and inventory of 71T75802S200PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75802S200PFGI is usually 5 days.
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71T75802S200PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71T75802S200PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71T75802S200PFGI?
For technical support, including 71T75802S200PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75802S200PFGI requirements.
6.How does Aetrix verify that 71T75802S200PFGI is sourced from the original manufacturer or authorized distributors?
All 71T75802S200PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75802S200PFGI meets industry standards.
7.What is the process for return or replacement of 71T75802S200PFGI?
All 71T75802S200PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71T75802S200PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71T75802S200PFGI part is unused and in its original packaging.
Return procedure for 71T75802S200PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71T75802S200PFGI Tags
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