Renesas 71T75802S200PFGI8

Overview

71T75802S200PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM configured as 512K × 36-bit (18 Mbit), supporting 200 MHz operation with 3.2 ns clock-to-data access, zero bus turnaround between read/write cycles, and pipelined burst outputs - deployed in high-speed networking line cards and packet buffer subsystems.

For engineers reviewing the 71T75802S200PFGI8 datasheet, 71T75802S200PFGI8 pinout, 71T75802S200PFGI8 application, or 71T75802S200PFGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface, and 2.5V I/O supply (VDDQ) decoupling requirements.

Technical Context

The 71T75802S200PFGI8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge; it uses an internal burst counter for 4-word interleaved or linear sequences controlled by LBO, and supports pipelined output enable via internally synchronized OE gating.

It integrates three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, individual byte write (BW1–BW4) for granular 9-bit writes, and a dedicated ZZ input for synchronous sleep mode with guaranteed data retention - all operating under 2.5V ±5% core (VDD) and I/O (VDDQ) supplies.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm; pinout validated per PKG100 configuration for 512K × 36 mode (71T75802 variant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV25-200AXC and AS7C33128PFS-20BIN, the 71T75802S200PFGI8 uniquely delivers ZBT™ timing, integrated JTAG, and synchronous sleep - making it the only option meeting combined high-throughput, testability, and thermal management requirements in next-gen telecom infrastructure.

Availability

71T75802S200PFGI8 is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, industrial control backplanes, and test equipment memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for 71T75802S200PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71T75802S200PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency burst buffering in high-speed packet-switched networks and deterministic real-time control systems.

FAQ

What memory configuration does the 71T75802S200PFGI8 support?

The 71T75802S200PFGI8 is factory-configured as a 512K × 36-bit synchronous SRAM (18 Mbit total), with pin-compatible support for 1M × 18-bit addressing via A19 usage. It does not support other configurations such as 256K × 72 or 2M × 9. The 71T75802S200PFGI8 datasheet confirms this dual-mode capability with distinct pinouts for each organization.

Does the 71T75802S200PFGI8 support both linear and interleaved burst modes?

Yes, the 71T75802S200PFGI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear order (A0, A1, A2, A3), and LBO = HIGH selects interleaved order (A0, A2, A1, A3). This behavior is explicitly defined in the functional timing diagrams and burst sequence tables of the 71T75802S200PFGI8 datasheet.

What is the role of the ZZ pin on the 71T75802S200PFGI8?

The ZZ pin on the 71T75802S200PFGI8 is a synchronous sleep mode input: when driven HIGH, it gates the internal clock and places the device into its lowest-power state while guaranteeing data retention. It is not a reset or shutdown pin - all register states and memory contents remain intact. The 71T75802S200PFGI8 resumes normal operation synchronously upon ZZ returning LOW.

Is JTAG functionality available on the 71T75802S200PFGI8 in TQFP packaging?

Yes, the 71T75802S200PFGI8 includes full IEEE 1149.1 JTAG boundary scan (TMS, TDI, TCK, TDO) in its TQFP-100 package, as confirmed by pin assignments in the PKG100 drawings. TRST is omitted in TQFP but is optional and BGA-only; the core JTAG chain remains fully functional for test and debug without TRST.

How does the 71T75802S200PFGI8 handle byte write operations?

The 71T75802S200PFGI8 supports individual 9-bit byte writes via four active-low signals: BW1 controls I/O[0:7] and I/OP1; BW2 controls I/O[8:15] and I/OP2; BW3 controls I/O[16:23] and I/OP3; BW4 controls I/O[24:31] and I/OP4. All BWx signals must be valid during load-write cycles (ADV/LD = LOW, R/W = LOW), and the selected bytes are written two clocks later - as verified in the synchronous truth table and write operation timing diagrams for the 71T75802S200PFGI8.