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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71T75902S75BGG

Name: 71T75902S75BGG
Brand: Renesas
SKU: 71T75902S75BGG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71T75902S75BGG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71T75902S75BGG.pdf

Description:: IC SRAM 18MBIT PARALLEL 119PBGA

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Product details

Overview

71T75902S75BGG from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M × 18-bit (18 Mbit) organization, 7.5 ns clock-to-data access, flow-through outputs, and integrated burst counter. It eliminates bus turnaround dead cycles between read/write operations and supports linear/interleaved 4-word bursts in high-speed networking and packet buffering applications.

For engineers reviewing the 71T75902S75BGG datasheet, 71T75902S75BGG pinout, 71T75902S75BGG application, or 71T75902S75BGG equivalent, this device delivers deterministic low-latency memory access with JTAG boundary scan, synchronous OE elimination, and industrial-grade temperature support (–40°C to +85°C) in BGA packaging.

Technical Context

The 71T75902S75BGG implements a zero-bus-turnaround architecture using synchronous address/control latching on CLK rising edge and data transfer one cycle later. Its internal burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequences - all fully synchronized to CLK without external timing control.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for flexible depth expansion, individual byte write (BW1/BW2), and a synchronous ZZ sleep input enabling full retention at <60 mA standby current. All I/Os are 2.5V-compatible with VDDQ separate from core VDD.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1M × 18-bit (18,874,368 bits); supports 18-bit parallel data path with dual parity bits via I/OP1/I/OP2
Clock Frequency / Access Time	100 MHz max (tCYC = 10 ns); tCD = 7.5 ns guarantees deterministic read latency for real-time packet processing
Supply Voltages	VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); independent rails enable mixed-voltage system interfacing
Burst Capability	4-word synchronous burst (linear or interleaved); reduces address bus traffic by 75% per burst sequence
Operating Temperature	–40°C to +85°C (industrial grade); validated for telecom infrastructure and industrial control environments
Power Management	IZZ = 40–60 mA in full sleep mode (ZZ HIGH); ISB1 = 40–60 mA CMOS standby; supports dynamic power gating
JTAG Interface	IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables in-system test and debug without external probes

Pinout & Package

Packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-standard footprint (12 mm × 12 mm), with 2.5V I/O compatibility and industrial-temperature qualification.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLK	System Clock Input	Primary timing reference; all synchronous operations (address, control, data) referenced to rising edge
R/W	Read/Write Control	Synchronous signal defining cycle type; determines whether next-cycle data is read out or written in
ADV/LD	Burst Counter Control	HIGH increments internal burst counter; LOW loads new external address - enables seamless burst chaining
CE1, CE2, CE2	Chip Enable Inputs	Three independent enables (CE1/CE2 active-low, CE2 active-high) allow multi-chip depth expansion without glue logic
BW1, BW2	Byte Write Enables	Active-low controls for two 9-bit bytes; permits partial-word writes without masking logic or extra cycles
OE	Output Enable	Asynchronous; eliminates need for precise OE timing - can be tied LOW for continuous read operation
ZZ	Sleep Mode Input	Synchronous HIGH gates internal clock and reduces supply current to IZZ level while retaining memory contents
TMS/TDI/TCK/TDO/TRST	JTAG Test Interface	Fully compliant IEEE 1149.1 boundary scan; TRST optional asynchronous reset (BGA only)
I/O0–I/O31, I/OP1–I/OP2	Data I/O Pins	32-bit bidirectional bus (18 data + 2 parity + 12 reserved); flow-through output path avoids output register delay
VDD, VDDQ, VSS	Power & Ground	Dual-supply design: VDD powers core logic, VDDQ powers I/O drivers - decouples noise-sensitive domains

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between consecutive reads/writes - enables back-to-back memory transactions at full clock rate
Flow-Through Output Architecture	No output register; data appears on I/O pins with fixed 7.5 ns tCD delay - simplifies timing closure in high-speed designs
Integrated 4-Word Burst Counter	Reduces address bus activity and controller overhead; LBO pin selects linear or interleaved addressing for cache-line alignment
Internally Synchronized OE	Removes requirement for OE timing coordination - allows static OE tie-down while maintaining full read/write functionality
Separate VDDQ Supply	Enables interfacing with 2.5V I/O systems while maintaining 2.5V core logic - improves noise immunity and signal integrity
JTAG Boundary Scan (IEEE 1149.1)	Supports automated PCB test, interconnect verification, and in-system debugging without physical probe access

Applications

High-Speed Packet Buffering	Network Switch Fabric Memory
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in layer-2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary data buffer SRAM providing deterministic 7.5 ns read access and zero-turnaround write-read transitions. Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles and supporting burst-aligned DMA transfers.	Use Scenario: Serving as shared memory for crossbar arbitration logic in modular chassis-based routers. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM acting as low-latency fabric lookup and queue management memory. Use Value: Delivers consistent sub-8 ns access with burst capability to sustain concurrent read/write requests across multiple ports.
Telecom Line Card Buffering	Industrial Real-Time Control FIFO
Use Scenario: Temporary storage of TDM voice frames and signaling messages in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Industrial-temperature-rated SRAM buffering time-critical telephony data with guaranteed retention in sleep mode. Use Value: Supports –40°C to +85°C operation and ZZ-controlled power-down during idle periods - reducing thermal load in dense line cards.	Use Scenario: Implementing deterministic-depth FIFOs for motion control PLCs requiring jitter-free data handoff between FPGA and MCU. IC Role / Device Role / Timing Role: Flow-through-output SRAM used as dual-port buffer with ADV/LD-driven burst reads for servo loop updates. Use Value: Eliminates output register uncertainty; fixed tCD ensures repeatable 7.5 ns latency critical for sub-microsecond control loops.

High-Speed Packet Buffering

Network Switch Fabric Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in layer-2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: Primary data buffer SRAM providing deterministic 7.5 ns read access and zero-turnaround write-read transitions.

Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles and supporting burst-aligned DMA transfers.

Use Scenario: Serving as shared memory for crossbar arbitration logic in modular chassis-based routers.

IC Role / Device Role / Timing Role: Synchronous ZBT SRAM acting as low-latency fabric lookup and queue management memory.

Use Value: Delivers consistent sub-8 ns access with burst capability to sustain concurrent read/write requests across multiple ports.

Telecom Line Card Buffering

Industrial Real-Time Control FIFO

Use Scenario: Temporary storage of TDM voice frames and signaling messages in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Industrial-temperature-rated SRAM buffering time-critical telephony data with guaranteed retention in sleep mode.

Use Value: Supports –40°C to +85°C operation and ZZ-controlled power-down during idle periods - reducing thermal load in dense line cards.

Use Scenario: Implementing deterministic-depth FIFOs for motion control PLCs requiring jitter-free data handoff between FPGA and MCU.

IC Role / Device Role / Timing Role: Flow-through-output SRAM used as dual-port buffer with ADV/LD-driven burst reads for servo loop updates.

Use Value: Eliminates output register uncertainty; fixed tCD ensures repeatable 7.5 ns latency critical for sub-microsecond control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18	1M × 18, 2.5V, 8 ns access; no JTAG; only TQFP package; no ZZ sleep mode	Lacks boundary scan and deep-sleep capability; limited to commercial temp range (0°C to +70°C)	Choose for cost-sensitive, non-JTAG, non-industrial designs where sleep mode is unnecessary.
AS7C31026B	1M × 18, 3.3V core/I/O; 10 ns access; asynchronous interface; no burst counter or ZBT architecture	Requires external burst logic and OE timing control; incompatible voltage domain; higher latency	Use only if legacy 3.3V system integration is mandatory and ZBT performance is not required.

Compared with CY7C1315KV18 and AS7C31026B, the 71T75902S75BGG uniquely combines industrial temperature support, IEEE 1149.1 JTAG, synchronous OE elimination, and true zero-turnaround operation - making it the sole option for high-reliability, high-throughput, testable embedded memory subsystems.

Availability

71T75902S75BGG is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and industrial real-time control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71T75902S75BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71T75902S75BGG belongs to IDT's ZBT SRAM product line, engineered specifically for low-latency, high-bandwidth data buffering in networking infrastructure and real-time embedded systems where deterministic timing and bus efficiency are critical.

FAQ

What is the maximum operating frequency of the 71T75902S75BGG?

The 71T75902S75BGG supports a maximum clock frequency of 100 MHz, corresponding to a minimum clock cycle time (tCYC) of 10 ns. This is validated across the industrial temperature range (–40°C to +85°C) with 2.5V ±5% supplies. The 7.5 ns clock-to-data access time (tCD) ensures predictable read latency under worst-case conditions.

Does the 71T75902S75BGG support both linear and interleaved burst modes?

Yes, the 71T75902S75BGG supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3). This is confirmed in the Linear and Interleaved Burst Sequence Tables within the official datasheet.

What package type does the 71T75902S75BGG use, and is it RoHS compliant?

The 71T75902S75BGG uses a 119-ball fine-pitch BGA package (BGG119), JEDEC-standard footprint measuring 12 mm × 12 mm. Per IDT/Renesas documentation, this variant is RoHS-compliant and qualifies as a green part - meeting lead-free soldering requirements and environmental regulations for industrial deployment.

How does the ZZ pin function in the 71T75902S75BGG?

The ZZ pin on the 71T75902S75BGG is a synchronous sleep mode input. When driven HIGH, it internally gates the clock and reduces core supply current to IZZ = 40–60 mA while guaranteeing full data retention. ZZ has an internal pulldown resistor, so it defaults to inactive (normal operation) when left unconnected - no external pull-up required.

Is JTAG boundary scan available on all 71T75902S75BGG packages?

JTAG boundary scan (IEEE 1149.1) is fully supported on the 71T75902S75BGG in its BGA (BGG119) package, including dedicated TMS, TDI, TCK, TDO, and optional TRST pins. The TQFP variant lacks TRST and has different pin assignments; however, the BGG suffix confirms the BGA version with full JTAG implementation as specified in Pin Configuration Table 25a.

71T75902S75BGG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 18Mbit

Memory Organization:: 1M x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 2.375V ~ 2.625V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71T75902S75BGG FAQ

1.How can I place an order for 71T75902S75BGG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75902S75BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75902S75BGG reliable?

The price and inventory of 71T75902S75BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75902S75BGG is usually 5 days.

3.What payment methods are accepted for 71T75902S75BGG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75902S75BGG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75902S75BGG?

71T75902S75BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75902S75BGG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75902S75BGG?

For technical support, including 71T75902S75BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75902S75BGG requirements.

6.How does Aetrix verify that 71T75902S75BGG is sourced from the original manufacturer or authorized distributors?

All 71T75902S75BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75902S75BGG meets industry standards.

7.What is the process for return or replacement of 71T75902S75BGG?

All 71T75902S75BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71T75902S75BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75902S75BGG part is unused and in its original packaging.

Return procedure for 71T75902S75BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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