Renesas 71T75902S75PFG8

Overview

71T75902S75PFG8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M × 18-bit (18 Mbit) organization, 7.5 ns clock-to-data access, flow-through outputs, and integrated burst counter. It supports interleaved/linear 4-word bursts, individual byte write control via BW1/BW2, and IEEE 1149.1 JTAG boundary scan. Used in high-speed packet buffering and cache coherency logic in telecom switching fabrics.

For engineers reviewing the 71T75902S75PFG8 datasheet, 71T75902S75PFG8 pinout, 71T75902S75PFG8 application, or 71T75902S75PFG8 equivalent, key selection criteria include ZBT™ zero-bus-turnaround timing, 2.5V core/I/O supply compatibility, TQFP-100 package footprint, industrial temperature support (–40°C to +85°C), and JTAG testability for system-level validation.

Technical Context

The 71T75902S75PFG8 implements a synchronous dual-edge-triggered architecture where address/control latching occurs on the rising CLK edge, with data output valid after a fixed 7.5 ns tCD delay. Its ZBTTM feature eliminates dead cycles between read/write transitions by decoupling burst address advancement (ADV/LD) from data transfer timing.

Burst sequencing is controlled statically by LBO (Linear/Interleaved), while internal flow-through output path bypasses output registers-enabling deterministic latency without OE-controlled gating. Clock Enable (CEN) suspends all synchronous operation without affecting output state, and ZZ input enables full-sleep mode with guaranteed data retention at ≤60 mA ISB3 current.

Key Specifications

Pinout & Package

71T75902S75PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT datasheet 5319 drw 02a (PKG100).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18 and AS7C31026B, the 71T75902S75PFG8 uniquely delivers 2.5V-compatible ZBTTM timing, JTAG testability, and industrial temperature support in a single TQFP-100 package - making it optimal for space-constrained, high-reliability telecom and industrial control memory subsystems.

Availability

71T75902S75PFG8 is available at Aetrix Electronics and suitable for packet buffering, cache coherency directory storage, and telecom line card control memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71T75902S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71T75902S75PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-bus-turnaround applications in high-speed networking equipment, where deterministic latency and burst efficiency are critical to system throughput.

FAQ

What does the 'S75' in 71T75902S75PFG8 indicate?

The 'S75' suffix in 71T75902S75PFG8 denotes the speed grade: 7.5 ns clock-to-data access time (tCD). This is confirmed in the AC Electrical Characteristics table (5319 tbl 24a), where tCD is specified as ≤7.5 ns for commercial/industrial grades. The 71T75902S75PFG8 is rated for 100 MHz operation with this timing guarantee under VDD = 2.5 V ±5% and –40°C to +85°C conditions.

Does 71T75902S75PFG8 support both linear and interleaved burst modes?

Yes, the 71T75902S75PFG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A1, A2, A3 per 5319 tbl 10 and 5319 tbl 11). This selection is static and must remain stable during burst operation.

Is JTAG functionality available in the TQFP package of 71T75902S75PFG8?

Yes, JTAG boundary scan (IEEE 1149.1) is fully supported in the 71T75902S75PFG8 TQFP-100 package. Pins TMS (38), TDI (39), TCK (43), and TDO (42) are assigned per 5319 drw 02a. TRST is omitted in TQFP but optional in BGA; all four primary JTAG signals are present and functional in the PFG8 variant.

How does the 71T75902S75PFG8 handle power-down and data retention?

The 71T75902S75PFG8 enters full-sleep mode when ZZ is driven HIGH, reducing supply current to ≤60 mA (ISB3, 5319 tbl 22a) while guaranteeing data retention. Sleep mode is synchronous and gated by CLK; data remains valid throughout sleep, and normal operation resumes within one clock cycle after ZZ returns LOW.

Can BW1 and BW2 be tied low permanently on 71T75902S75PFG8?

Yes, BW1 and BW2 may be tied LOW permanently on the 71T75902S75PFG8 if full 18-bit word writes are always required. Per datasheet section "Features", this configuration enables write access to all bytes simultaneously. No timing penalty or functional limitation applies - the device treats asserted BW1/BW2 as enabling their respective 9-bit byte lanes.