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Renesas 71T75902S75PFGI

Part No.:
71T75902S75PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75902S75PFGI.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,800

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Product details

Overview

71T75902S75PFGI from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M × 18-bit organization (18,874,368 bits), 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and integrated burst counter. It supports zero bus turnaround between read/write cycles and operates across industrial temperature range (–40°C to +85°C) in a 100-pin TQFP package - used in high-speed packet buffering and network switch data planes.

For engineers reviewing the 71T75902S75PFGI datasheet, 71T75902S75PFGI pinout, 71T75902S75PFGI application, or 71T75902S75PFGI equivalent, key selection considerations include its synchronous ZBT architecture, 4-word burst capability (linear/interleaved), individual byte write control (BW1/BW2), JTAG IEEE 1149.1 compliance, and dual 2.5V supply (VDD/VDDQ) requirements.

Technical Context

The 71T75902S75PFGI implements a synchronous, clock-driven interface with all address/control inputs registered on the rising edge of CLK (except asynchronous OE). Its ZBT architecture eliminates dead cycles via internal burst counter and ADV/LD-controlled address loading or incrementing - enabling seamless back-to-back reads/writes without bus idle time.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for flexible depth expansion, flow-through output path (no output register), and full JTAG boundary-scan support (TMS/TDI/TCK/TDO/TRST). Sleep mode (ZZ input) reduces current to ≤60 mA in full standby while guaranteeing data retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1M × 18-bit (18,874,368 bits); supports 18-bit parallel data path with I/O[0:15] + I/OP1/I/OP2
Clock Frequency 100 MHz (tCYC = 10 ns min); enables deterministic 7.5 ns clock-to-data access for timing-critical buffering
Supply Voltages VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); separate supplies allow I/O voltage domain isolation
Burst Capability 4-word burst (linear or interleaved via LBO pin); reduces address bus traffic by 75% per burst sequence
Operating Temperature –40°C to +85°C (industrial grade); validated for sustained operation in telecom and industrial control environments
Power Consumption IZZ ≤ 60 mA in full sleep mode (ZZ high); ISB1 = 40–60 mA in CMOS standby; supports low-power system states
JTAG Compliance IEEE 1149.1 compliant (TMS/TDI/TCK/TDO/TRST); enables in-system testability and debug without external probes

Pinout & Package

71T75902S75PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout validated per IDT datasheet 5319 (Rev. Apr.07.20), PKG100 configuration.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLK System Clock Input Rising-edge-triggered master clock; all synchronous timing referenced to this signal (OE excluded)
R/W Read/Write Control Synchronous signal defining cycle type; determines whether next-cycle data transfer is read (H) or write (L)
ADV/LD Advance Burst / Load Address Controls burst counter (HIGH) or loads new external address (LOW); critical for burst sequencing and address management
BW1, BW2 Byte Write Enables Active-low synchronous controls for 9-bit byte writes; BW1 → I/O[0:7]+I/OP1, BW2 → I/O[8:15]+I/OP2
CE1, CE2, CE2 Chip Enable Inputs Three enables for depth expansion: CE1/CE2 active-low, CE2 active-high; any false enable deselects device in one cycle
OE Output Enable Asynchronous control; drives I/O pins to high-Z when HIGH - eliminates need for precise timing coordination
ZZ Sleep Mode Input Active-high synchronous entry to lowest-power state; gates internal clock and retains memory contents
TMS, TDI, TCK, TDO, TRST JTAG Boundary-Scan Interface IEEE 1149.1-compliant test access port; TRST optional asynchronous reset (internal pullup)
VDD, VDDQ, VSS Power & Ground VDD = 2.5 V core supply; VDDQ = 2.5 V I/O supply; VSS = common ground; decoupling required per datasheet layout guidelines

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between consecutive read/write operations - enables continuous data streaming in packet buffers
Flow-Through Outputs No output register; data appears on I/O pins after tCD delay (≤7.5 ns), reducing latency vs. registered-output SRAMs
Internally Synchronized OE OE is the only asynchronous signal; all other controls are synchronous - simplifies timing closure in high-speed designs
4-Word Burst Counter Reduces address bus activity by 75% per burst; LBO pin selects linear or interleaved order for cache-line alignment
Individual Byte Write Independent BW1/BW2 control allows partial 9-bit word writes - avoids read-modify-write overhead in protocol stacks
JTAG Boundary Scan Fully IEEE 1149.1-compliant TAP controller with TRST option - supports production test, diagnostics, and in-field verification

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in switching fabric ASICs before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with deterministic 7.5 ns access and zero-turnaround burst reads/writes.

Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle time and supporting 4-word burst efficiency.

Use Scenario: Acting as shared memory between DSPs and FPGA-based framer/mapper logic in OC-192/STM-64 line cards.

IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing 18-bit wide, 100 MHz data exchange with burst-aligned addressing.

Use Value: Matches DSP/FPGA bus widths and timing margins; JTAG support enables field-upgradable firmware validation.

Industrial PLC Data Exchange High-Speed Test Equipment Memory

Use Scenario: Real-time I/O mapping and cyclic process data storage in modular programmable logic controllers.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM with robust power-down (ZZ) and CMOS standby modes.

Use Value: Ensures deterministic response under thermal stress; byte-write capability supports partial tag updates without full-word overwrite.

Use Scenario: Capturing high-speed digital waveforms or protocol traces in automated test equipment (ATE) systems.

IC Role / Device Role / Timing Role: Flow-through output SRAM delivering sub-8 ns valid data windows for precise sampling alignment.

Use Value: Reduces setup/hold margin pressure on capture logic; burst mode accelerates trace dump transfers to host processor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous ZBT SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1301DV33-100AXC 3.3V core/I/O supply; 1M × 18, same 100 MHz speed but no JTAG; TQFP-100, commercial temp only Lacks industrial temp rating and IEEE 1149.1 test interface; requires 3.3V supply redesign Select only if system already uses 3.3V rails and JTAG test is not required.
AS7C31026B-10JIN 2.5V, 1M × 18, 10 ns access (100 MHz), no burst counter or ZBT; standard sync SRAM with output register Higher latency (tCD = 10 ns), no zero-turnaround, no ADV/LD or burst control - simpler but less efficient for streaming Choose when deterministic burst behavior is unnecessary and lower cost outweighs performance loss.

Compared with CY7C1301DV33-100AXC and AS7C31026B-10JIN, the 71T75902S75PFGI uniquely delivers industrial-temperature ZBT operation with JTAG and true flow-through outputs - making it optimal for telecom infrastructure where timing determinism, testability, and thermal resilience are non-negotiable.

Availability

71T75902S75PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data exchange, high-speed test equipment memory, and embedded real-time control systems requiring stable component supply across extended temperature ranges.

Supply support for 71T75902S75PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71T75902S75PFGI belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking ASICs, switches, and routers - emphasizing deterministic timing, burst efficiency, and industrial reliability.

FAQ

What is the maximum operating frequency of the 71T75902S75PFGI?

The 71T75902S75PFGI supports a maximum clock frequency of 100 MHz, corresponding to a minimum clock cycle time (tCYC) of 10 ns. This is validated across the industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 2.5 V ±5%. The 7.5 ns clock-to-data access (tCD) ensures tight timing margins for high-speed interfaces.

Does the 71T75902S75PFGI support burst read and write operations?

Yes, the 71T75902S75PFGI supports 4-word burst operations for both reads and writes using its internal synchronous burst counter. The LBO pin selects between linear and interleaved burst sequences, and the ADV/LD signal controls whether a new external address is loaded (LOW) or the counter is incremented (HIGH).

What is the function of the ZZ pin on the 71T75902S75PFGI?

The ZZ pin on the 71T75902S75PFGI is the synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device into full sleep mode with supply current reduced to ≤60 mA (IZZ), while guaranteeing data retention. ZZ has an internal pulldown resistor and is sampled synchronously on the rising edge of CLK.

How does the 71T75902S75PFGI achieve zero bus turnaround (ZBT)?

The 71T75902S75PFGI achieves ZBT through its synchronous architecture with registered address/control inputs, flow-through outputs, and a dedicated burst counter. By allowing immediate transition from write to read (or vice versa) within a single clock cycle - without bus idle time - it eliminates dead cycles inherent in traditional pipelined SRAMs.

Is JTAG boundary scan supported on the 71T75902S75PFGI?

Yes, the 71T75902S75PFGI includes full IEEE 1149.1-compliant JTAG boundary-scan functionality with TMS, TDI, TCK, TDO, and optional TRST pins. This enables in-system test, interconnect verification, and debug without requiring physical probe access - critical for high-density telecom PCBs.

71T75902S75PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP

71T75902S75PFGI FAQ

1.How can I place an order for 71T75902S75PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75902S75PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75902S75PFGI reliable?

The price and inventory of 71T75902S75PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75902S75PFGI is usually 5 days.

3.What payment methods are accepted for 71T75902S75PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75902S75PFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75902S75PFGI?

71T75902S75PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75902S75PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75902S75PFGI?

For technical support, including 71T75902S75PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75902S75PFGI requirements.

6.How does Aetrix verify that 71T75902S75PFGI is sourced from the original manufacturer or authorized distributors?

All 71T75902S75PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75902S75PFGI meets industry standards.

7.What is the process for return or replacement of 71T75902S75PFGI?

All 71T75902S75PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71T75902S75PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75902S75PFGI part is unused and in its original packaging.

Return procedure for 71T75902S75PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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