Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71T75902S75PFGI8

Part No.:
71T75902S75PFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71T75902S75PFGI8.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,560

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71T75902S75PFGI8 from IDT (now Renesas) is a 2.5V synchronous ZBT™ SRAM with 1M × 18-bit organization (18,874,368 bits), 7.5 ns clock-to-data access time, flow-through outputs, and integrated burst counter supporting 4-word linear or interleaved bursts. It enables zero-bus-turnaround operation in high-speed packet buffering and network switch fabric applications.

For engineers reviewing the 71T75902S75PFGI8 datasheet, 71T75902S75PFGI8 pinout, 71T75902S75PFGI8 application, or 71T75902S75PFGI8 equivalent, key selection criteria include its 100 MHz system timing capability, synchronous OE-free output control via internal buffer enable, triple chip enable architecture for depth expansion, and IEEE 1149.1 JTAG boundary scan support for production testability.

Technical Context

The 71T75902S75PFGI8 implements a synchronous, clock-driven interface where address/control latching occurs on the rising CLK edge, and data transfer occurs one cycle later. Its ZBT™ architecture eliminates dead cycles between read/write transitions using an advance/load (ADV/LD) signal to manage burst sequencing and address loading.

It features a synchronous 4-word burst counter with LBO-selectable linear/interleaved addressing, individual byte write enables (BW1/BW2), and three chip enables (CE1, CE2 active-low; CE2 active-high) enabling flexible memory depth expansion. Sleep mode (ZZ) and clock enable (CEN) provide dynamic power management without compromising data retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1M × 18-bit (18,874,368 bits); supports 36-bit wide data paths via dual 18-bit I/O banks.
Clock Frequency / tCYC 100 MHz maximum (tCYC = 10 ns); enables real-time packet buffering in telecom line cards.
Access Time (tCD) 7.5 ns max clock-to-data; guarantees deterministic latency for time-critical switching logic.
Supply Voltages VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); separate rails allow independent I/O voltage scaling.
Operating Temperature –40°C to +85°C (industrial grade); qualified for base station and industrial control environments.
Power Modes Full sleep (IZZ ≤ 60 mA), clock-running standby (ISB2 ≤ 125 mA), and idle (ISB3 ≤ 80 mA) support thermal-aware system power budgets.
JTAG Compliance IEEE 1149.1 compliant boundary scan; enables in-system test and debug without external probes.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT document 5319 drw 02a (PKG100).

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled.
CLK System Clock Input Rising-edge-triggered master timing reference; all synchronous operations referenced to this edge.
R/W Read/Write Control Synchronous command input determining data direction for next-cycle transfer (HIGH = read, LOW = write).
ADV/LD Burst Address Control Loads new external address (LOW) or increments internal burst counter (HIGH); defines burst initiation and sequencing.
CE1, CE2, CE2 Chip Enables Three independent enables (CE1/CE2 active-low, CE2 active-high); any false condition deselects device in one cycle.
BW1, BW2 Byte Write Enables Active-low synchronous controls for 9-bit byte writes; allows partial-word updates without masking logic.
OE Output Enable Asynchronous tri-state control; eliminates need for external OE timing coordination in read-heavy systems.
ZZ Sleep Mode Input Active-high synchronous entry into full sleep; reduces supply current to ≤60 mA while retaining memory contents.
TMS, TDI, TCK, TDO JTAG Test Interface IEEE 1149.1 boundary scan pins; enable structural testing and debug without interrupting normal operation.
I/O0–I/O31, I/OP1–I/OP2 Data I/O Bus 36-bit bidirectional flow-through data path (18-bit × 2 banks); no output register - data appears after tCD delay.

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between consecutive reads/writes by overlapping address setup and data transfer phases.
Internally Synchronized OE Removes requirement for precise OE timing control - outputs auto-tri-state when not selected or during write cycles.
4-Word Burst Counter Reduces address bus traffic by 75% during sequential accesses; LBO pin selects linear or interleaved sequence order.
Triple Chip Enable Architecture Enables seamless depth expansion across multiple devices without external decode logic or glue logic.
Separate VDD/VDDQ Supplies Allows independent core and I/O voltage domains - critical for mixed-voltage system integration and noise isolation.
Industrial Temperature Range Rated for –40°C to +85°C operation; qualified for deployment in uncontrolled ambient environments like outdoor telecom cabinets.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in multi-gigabit switches and routers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns access.

Use Value: Enables zero-bus-turnaround burst transfers to sustain 10 Gbps+ line rates without pipeline stalls.

Use Scenario: Supporting ATM cell processing and header modification in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing burst-aligned data storage for real-time frame reassembly.

Use Value: 4-word burst capability reduces address bus overhead by 75%, improving effective throughput in time-sensitive control planes.

Base Station Baseband Processing Industrial PLC Data Logging

Use Scenario: Temporary storage of IQ samples and channel estimation results in LTE/5G remote radio units.

IC Role / Device Role / Timing Role: Low-power, industrial-grade SRAM interfacing directly with FPGA-based DSP engines.

Use Value: Full sleep mode (IZZ ≤ 60 mA) and –40°C to +85°C rating ensure reliable operation in outdoor RF enclosures.

Use Scenario: Cyclic data capture from analog sensors and fieldbus interfaces in factory automation controllers.

IC Role / Device Role / Timing Role: Deterministic-access memory for timestamped event logging with guaranteed data retention during brownouts.

Use Value: ZZ-controlled sleep mode maintains memory state at minimal current, extending backup battery life in standalone loggers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33 3.3V core/I/O supply; 1M × 18 organization; 8 ns access; no JTAG; only linear burst mode. Requires 3.3V infrastructure; lacks IEEE 1149.1 testability and interleaved burst flexibility. Select when legacy 3.3V systems demand drop-in replacement and JTAG is unnecessary.
AS7C31026B 2.5V core/I/O; 1M × 18; 10 ns access; asynchronous interface; no burst counter or ZBT functionality. Higher latency; no zero-turnaround capability; requires external OE timing control and address sequencing logic. Select only for cost-sensitive, non-real-time applications where burst efficiency and deterministic timing are not required.

Compared with CY7C1362BV33 and AS7C31026B, the 71T75902S75PFGI8 uniquely delivers 2.5V ZBT™ operation with JTAG testability, 7.5 ns access, and selectable burst modes - making it optimal for new designs requiring low-latency, testable, and thermally robust packet memory.

Availability

71T75902S75PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71T75902S75PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71T75902S75PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking, telecom, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71T75902S75PFGI8?

The 71T75902S75PFGI8 supports a maximum clock frequency of 100 MHz, corresponding to a minimum clock cycle time (tCYC) of 10 ns. This is validated under commercial and industrial temperature conditions with VDD and VDDQ at 2.5 V ±5%. The 7.5 ns clock-to-data access time (tCD) ensures deterministic timing for high-speed packet processing applications.

Does the 71T75902S75PFGI8 support both linear and interleaved burst modes?

Yes, the 71T75902S75PFGI8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved addressing (A0, A1, A2, A3 in bit-reversed order). This flexibility accommodates different cache line and DMA engine requirements.

How does the ZBT™ architecture eliminate bus turnaround delays in the 71T75902S75PFGI8?

The 71T75902S75PFGI8 achieves zero bus turnaround by decoupling address loading from data transfer using the ADV/LD signal. When ADV/LD = LOW, a new external address is loaded; when ADV/LD = HIGH, the internal burst counter advances. This allows immediate transition between read and write cycles without inserting idle cycles - a key advantage over conventional pipelined SRAMs.

What power-saving modes are available on the 71T75902S75PFGI8?

The 71T75902S75PFGI8 offers four distinct power states: active operation (IDD ≤ 295 mA), deselected standby (ISB1 ≤ 60 mA), clock-running standby (ISB2 ≤ 125 mA), and full sleep mode (IZZ ≤ 60 mA). Sleep mode is entered synchronously via the ZZ pin and maintains full data retention while minimizing current draw - critical for energy-constrained deployments.

Is JTAG boundary scan supported on the 71T75902S75PFGI8, and which package includes TRST?

Yes, the 71T75902S75PFGI8 includes full IEEE 1149.1-compliant JTAG boundary scan with TMS, TDI, TCK, and TDO pins. The optional TRST (JTAG reset) pin is available only in the 119-ball BGA package (BG119/BGG119), not in the 100-pin TQFP variant. In TQFP, JTAG reset occurs automatically at power-up or via TMS/TCK sequences per IEEE 1149.1.

71T75902S75PFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP

71T75902S75PFGI8 FAQ

1.How can I place an order for 71T75902S75PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71T75902S75PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71T75902S75PFGI8 reliable?

The price and inventory of 71T75902S75PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71T75902S75PFGI8 is usually 5 days.

3.What payment methods are accepted for 71T75902S75PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71T75902S75PFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71T75902S75PFGI8?

71T75902S75PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71T75902S75PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71T75902S75PFGI8?

For technical support, including 71T75902S75PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71T75902S75PFGI8 requirements.

6.How does Aetrix verify that 71T75902S75PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71T75902S75PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71T75902S75PFGI8 meets industry standards.

7.What is the process for return or replacement of 71T75902S75PFGI8?

All 71T75902S75PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71T75902S75PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71T75902S75PFGI8 part is unused and in its original packaging.

Return procedure for 71T75902S75PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71T75902S75PFGI8 Tags

  • 71T75902S75PFGI8
  • 71T75902S75PFGI8 PDF
  • 71T75902S75PFGI8 Datasheet
  • 71T75902S75PFGI8 Specifications
  • 71T75902S75PFGI8 Images
  • Renesas
  • Renesas 71T75902S75PFGI8
  • Buy 71T75902S75PFGI8
  • 71T75902S75PFGI8 Price
  • 71T75902S75PFGI8 Distributor
  • 71T75902S75PFGI8 Supplier
  • 71T75902S75PFGI8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER