Renesas 71V016SA10BF

Overview

71V016SA10BF from Renesas Electronics is a 64K × 16-bit (1 Mbit), 3.3V CMOS static RAM with 10 ns access time, industrial temperature range (–40°C to +85°C), LVTTL-compatible I/O, and dual byte enable (BHE/BLE) for flexible data bus control in embedded memory subsystems.

For engineers reviewing the 71V016SA10BF datasheet, 71V016SA10BF pinout, 71V016SA10BF application, or 71V016SA10BF equivalent, this device serves as a high-speed, low-power asynchronous SRAM for real-time buffering, cache extension, and FPGA co-processor memory in industrial controllers, telecom line cards, and test equipment requiring deterministic timing and byte-level write granularity.

Technical Context

The 71V016SA10BF implements fully static asynchronous logic with no clocks or refresh required. Its architecture supports independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes via dedicated BHE and BLE inputs, enabling partial-word updates without read-modify-write cycles.

It features three independent enable controls - Chip Select (CS), Output Enable (OE), and Write Enable (WE) - allowing precise timing control of read, write, and output tri-state behavior. All timing parameters are guaranteed over full industrial temperature and voltage (3.15 V–3.6 V) ranges, with tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns.

Key Specifications

Pinout & Package

71V016SA10BF is housed in a 48-ball plastic FBGA (BFG48) package per JEDEC MO-245, with 0.8 mm ball pitch and 7 mm × 7 mm body size. Pinout follows standard 71V016SA family layout for FBGA variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C1008-10TIN, the 71V016SA10BF uniquely delivers true 16-bit width with independent high/low byte control in a compact FBGA, enabling single-chip 16-bit memory expansion with minimal PCB area and no bus arbitration logic.

Availability

71V016SA10BF is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card data caches, FPGA co-processor local RAM, and test equipment pattern memory requiring stable component supply across extended temperature and long production lifecycles.

Supply support for 71V016SA10BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V016SA series was designed as a drop-in replacement for legacy 5 V SRAMs in 3.3 V systems, emphasizing low-power static operation, industrial temperature resilience, and LVTTL interoperability for memory-constrained real-time controllers.

FAQ

What is the maximum operating frequency supported by the 71V016SA10BF?

The 71V016SA10BF is an asynchronous SRAM with no internal clock; its timing is governed by access and cycle times rather than frequency. With tRC = 10 ns, it supports up to 100 MHz effective bus throughput in systems with zero wait-state interfaces. Actual achievable bandwidth depends on controller handshake timing and bus protocol overhead, not a fixed clock rate.

Does the 71V016SA10BF require external refresh circuitry?

No, the 71V016SA10BF is a fully static CMOS SRAM and requires no refresh cycles or external refresh circuitry. Its memory cells retain data indefinitely as long as VDD is applied and within specification (3.15 V–3.6 V). This eliminates refresh-related timing constraints and simplifies system design versus DRAM solutions.

Can the 71V016SA10BF operate reliably at –40°C?

Yes, the 71V016SA10BF is explicitly rated for industrial temperature operation from –40°C to +85°C. All AC and DC electrical specifications - including tAA = 10 ns, tRC = 10 ns, and ISB1 = 10 µA - are guaranteed across this full range, making it suitable for deployment in unheated outdoor cabinets, factory automation, and transportation electronics.

What is the function of the BHE and BLE pins on the 71V016SA10BF?

The BHE (High Byte Enable) and BLE (Low Byte Enable) pins on the 71V016SA10BF independently control write operations to the upper (I/O8–I/O15) and lower (I/O0–I/O7) byte lanes. When BHE = L and BLE = H, only the high byte is written; when BLE = L and BHE = H, only the low byte is written; both low enables full 16-bit writes - eliminating read-modify-write sequences.

Is the 71V016SA10BF pin-compatible with other speed grades in the same package?

Yes, all 71V016SA variants (10/12/15/20 ns) share identical pinouts and package footprints for each package type (e.g., BFG48). The 71V016SA10BF can be substituted with 71V016SA12BF or 71V016SA15BF in the same BFG48 layout without PCB changes, though timing margins and system performance will scale accordingly.