Renesas 71V016SA10BFG

Overview

71V016SA10BFG from Renesas Electronics is a 64K × 16-bit (1 Mbit), 3.3 V high-speed CMOS static RAM with 10 ns access time, industrial-grade temperature range (–40°C to +85°C), LVTTL-compatible I/O, and dual byte enable (BHE/BLE) for flexible data bus control in embedded memory subsystems.

For engineers reviewing the 71V016SA10BFG datasheet, 71V016SA10BFG pinout, 71V016SA10BFG application, or 71V016SA10BFG equivalent, this device serves as a drop-in replacement for legacy SRAMs in real-time control, FPGA configuration storage, and network packet buffering where deterministic low-latency read/write cycles and byte-select capability are critical.

Technical Context

The 71V016SA10BFG implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process technology optimized for stable operation across industrial temperatures. Its dual-byte enable logic (BHE/BLE) enables independent 8-bit access to upper and lower data bytes without external gating.

It supports three distinct write control modes-chip-select (CS), output-enable (OE), and byte-enable (BHE/BLE)-with guaranteed timing parameters including tAA ≤ 10 ns, tRC = 10 ns, and tWP ≥ 7 ns. All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V supply.

Key Specifications

Pinout & Package

71V016SA10BFG is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 7 mm × 7 mm footprint and 0.8 mm ball pitch, optimized for high-density PCB layouts and thermal performance in industrial modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C1008-10TIN, the 71V016SA10BFG uniquely delivers 16-bit parallel access, industrial-grade 10 ns timing in FBGA, and hardware byte masking-enabling direct integration into high-density FPGA-based systems without glue logic or package conversion.

Availability

71V016SA10BFG is available at Aetrix Electronics and suitable for industrial automation, medical imaging equipment, and network infrastructure requiring stable component supply, long-lifecycle support, and verified green-process compliance.

Supply support for 71V016SA10BFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V016SA10BFG belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and precise timing control are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V016SA10BFG?

The 71V016SA10BFG does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: tRC = 10 ns minimum cycle time supports up to 100 MHz effective bus bandwidth in burst-read scenarios. Real-world throughput depends on controller handshake timing and bus width utilization-not clock rate.

Does the 71V016SA10BFG require external refresh circuitry?

No, the 71V016SA10BFG is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its internal latching design retains data indefinitely as long as VDD remains within 3.15–3.6 V and ambient temperature stays within –40°C to +85°C. This eliminates timing overhead and system complexity associated with DRAM refresh management.

Can the 71V016SA10BFG be used with 5 V logic systems?

No-the 71V016SA10BFG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH threshold is specified at ≥2.0 V-not 5 V tolerant. Interfacing with 5 V systems requires level-shifting circuitry; direct connection risks damage and violates DC electrical specifications.

What is the function of the BHE and BLE pins on the 71V016SA10BFG?

The BHE (High-Byte Enable) and BLE (Low-Byte Enable) pins on the 71V016SA10BFG provide independent control over the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When asserted low, each enables its respective 8-bit segment for read or write; both must be low for full 16-bit word access. This eliminates external byte-mask logic in mixed-width bus architectures.

Is the 71V016SA10BFG pin-compatible with earlier IDT versions like the IDT71V016SA10BFG?

Yes-the 71V016SA10BFG is a Renesas-branded continuation of the original IDT71V016SA10BFG, retaining identical pinout, timing, electrical characteristics, and FBGA (BFG48) package. Renesas acquired IDT in 2019 and maintains full backward compatibility; no PCB or firmware changes are required when migrating from IDT-marked units.