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Renesas 71V016SA10BFG8

Part No.:
71V016SA10BFG8
Manufacturer:
Renesas
Category:
Memory
Package:
48-LFBGA
Datasheet:
Aetrix71V016SA10BFG8.pdf
Description:
IC SRAM 1MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,223

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Product details

Overview

71V016SA10BFG8 from Renesas Electronics is a 1,048,576-bit (64K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/Os, and industrial temperature range (–40°C to +85°C). It features separate upper/lower byte enables, chip select plus output enable control, and is used in real-time embedded controllers requiring deterministic low-latency memory access.

For engineers reviewing the 71V016SA10BFG8 datasheet, 71V016SA10BFG8 pinout, 71V016SA10BFG8 application, or 71V016SA10BFG8 equivalent, key selection criteria include tAA ≤ 10 ns, tRC = 10 ns, BHE/BLE byte-select capability, FBGA-48 package compatibility, and industrial-grade reliability for avionics and industrial PLC memory buffers.

Technical Context

The 71V016SA10BFG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture (BHE/BLE) supports independent 8-bit data path control, while the dedicated OE pin enables fast 5 ns output enable timing.

All address (A0–A15), control (CS, WE, OE, BHE, BLE), and bidirectional I/O (I/O0–I/O15) signals are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V. The device operates across –40°C to +85°C with guaranteed ICC ≤ 170 mA (dynamic) and ISB1 ≤ 10 µA (full standby).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size64K × 16-bit (1,048,576 bits); supports word-wide data transfers without external multiplexing
Access Time (tAA)≤10 ns; guarantees data valid within 10 ns of address stabilization for tight real-time timing budgets
Cycle Time (tRC)10 ns; enables maximum 100 MHz random read/write throughput in burst-free operation
Supply Voltage3.3 V ±0.15 V (3.15–3.6 V); compatible with standard LVTTL logic rails and eliminates level-shifting needs
Operating Temperature–40°C to +85°C; qualified for industrial control, railway, and aerospace edge computing environments
I/O InterfaceLVTTL-compatible bidirectional I/Os; interfaces directly with FPGA I/O banks and microcontroller data buses
Package48-ball FBGA (BFG48), 7 mm × 7 mm, 0.8 mm pitch; supports high-density PCB layouts with thermal efficiency

Pinout & Package

71V016SA10BFG8 is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 7 mm × 7 mm footprint and 0.8 mm ball pitch. The package supports reflow soldering and provides low-inductance signal paths for high-speed memory access.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus; selects one of 64K memory locations; fully static-no setup/hold timing constraints beyond tAS/tAH
CSChip SelectActive-low enable; places device in active or standby mode; tACS ≤ 10 ns ensures fast bank selection
WEWrite EnableActive-low write control; initiates write cycle when CS and BHE/BLE are asserted; tWP ≥ 7 ns minimum pulse width
OEOutput EnableActive-low output control; enables I/O drivers with tOE ≤ 5 ns; allows shared bus arbitration without bus contention
BHEHigh-Byte EnableActive-low control for I/O8–I/O15; enables 8-bit upper-word writes/reads independent of lower byte
BLELow-Byte EnableActive-low control for I/O0–I/O7; enables 8-bit lower-word operations; supports byte-level memory mapping
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O bus; tristated when CS high or OE high; supports simultaneous read/write with byte granularity
VDDPower Supply3.3 V main supply; decoupling required per Renesas layout guidelines to maintain tAA/tRC stability
VSSGroundSignal and power ground reference; requires low-impedance plane connection to minimize noise coupling into I/O paths

Key Features

FeatureDesign Value
10 ns access & cycle timeEnables deterministic sub-100 ns memory latency for real-time interrupt service routines and DMA buffering
Independent byte enables (BHE/BLE)Permits partial-word writes without read-modify-write cycles-critical for protocol stack buffer management
Single 3.3 V supplyEliminates dual-rail power design complexity and reduces BOM count in LVTTL-based systems
Industrial temperature rangeValidated operation from –40°C to +85°C ensures reliability in uncontrolled environmental deployments
FBGA-48 packageProvides compact footprint and superior thermal dissipation vs. SOJ/TSOP-ideal for space-constrained modules

Applications

Industrial PLC Memory BufferAvionics Data Logger

Use Scenario: Storing sensor acquisition buffers and control state tables in programmable logic controllers operating in factory-floor environments with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM interface for fast register backup and deterministic I/O scan cycle execution.

Use Value: 10 ns tAA ensures zero-cycle wait-state operation with Cortex-M7 or SH-4 microcontrollers, eliminating pipeline stalls during critical control loops.

Use Scenario: Capturing high-rate flight telemetry (GPS, IMU, engine parameters) in airborne black box recorders where power may be interrupted unexpectedly.

IC Role / Device Role / Timing Role: High-reliability volatile buffer between ADC/FPGA capture engine and flash storage controller.

Use Value: Full industrial temp rating and <10 µA ISB1 current allow safe holdover during brownout events without battery backup.

Railway Signaling ControllerMedical Imaging Front-End

Use Scenario: Real-time track occupancy table updates and interlocking logic state storage in EN 5012x-certified signaling hardware deployed outdoors.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for safety-critical state machines with strict WCET requirements.

Use Value: Guaranteed 10 ns timing across –40°C to +85°C eliminates derating margins, reducing worst-case execution time analysis overhead.

Use Scenario: Temporary frame buffering in portable ultrasound or X-ray image processors where EMI resilience and thermal stability are essential.

IC Role / Device Role / Timing Role: Low-noise, low-power SRAM for pixel data staging before compression and transmission.

Use Value: 7 pF CI/O capacitance and LVTTL compatibility minimize signal integrity risk on high-speed parallel video buses near RF-sensitive analog sections.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-10ZSXI1 Mbit (64K × 16), 10 ns, 3.3 V, TSOP-44; no BHE/BLE pins-uses full-word I/O onlyLacks byte-enable capability; requires external logic for partial-word writesSelect when board layout already uses TSOP-44 and byte granularity is not required
IS61LV25616AL-10TLI256K × 16-bit (4 Mbit), 10 ns, 3.3 V, TSOP-44; larger density but same timing and voltageHigher capacity suits longer buffer depths but consumes more power (ICC up to 190 mA)Choose when >1 Mbit memory depth is needed and TSOP-44 footprint is acceptable

Compared with CY62167EV30LL-10ZSXI and IS61LV25616AL-10TLI, the 71V016SA10BFG8 uniquely delivers byte-select control in an FBGA-48 package with industrial temp validation-enabling compact, thermally robust designs where partial-word access and space efficiency are mandatory.

Availability

71V016SA10BFG8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics data loggers, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V016SA10BFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V016SA10BFG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time control and data acquisition systems.

FAQ

What is the maximum operating frequency supported by the 71V016SA10BFG8?

The 71V016SA10BFG8 does not use a clock and is asynchronous, so it has no operating frequency specification. Its 10 ns cycle time (tRC) supports effective random-access throughput up to 100 MHz in practice. Timing is governed by address setup/hold and control signal propagation-not a system clock-making it ideal for microcontroller and FPGA-based systems without synchronous memory controllers.

Does the 71V016SA10BFG8 require external refresh circuitry?

No, the 71V016SA10BFG8 is a fully static RAM and requires no refresh circuitry. Its internal latches retain data indefinitely as long as VDD is applied and CS remains inactive (high) or the device is deselected. This eliminates refresh overhead and timing uncertainty found in DRAM, simplifying system design for real-time applications.

Can the 71V016SA10BFG8 operate reliably at –40°C?

Yes, the 71V016SA10BFG8 is explicitly qualified for industrial temperature operation from –40°C to +85°C. All AC and DC specifications-including tAA ≤ 10 ns, tRC = 10 ns, and ICC ≤ 170 mA-are guaranteed across this full range, as confirmed in the Renesas datasheet revision Jun.23.20 under "Industrial" grade listings.

What is the function of the BHE and BLE pins on the 71V016SA10BFG8?

The BHE (High-Byte Enable) and BLE (Low-Byte Enable) pins on the 71V016SA10BFG8 provide independent control over the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When asserted low with CS and WE, they allow byte-granularity reads and writes-enabling efficient handling of 8-bit peripheral registers or mixed-endian data structures without full-word read-modify-write sequences.

Is the 71V016SA10BFG8 RoHS-compliant and halogen-free?

Yes, the 71V016SA10BFG8 is a green part compliant with RoHS Directive 2011/65/EU and halogen-free per IEC 61249-2-21. The "G" in the part number denotes green packaging, and Renesas confirms compliance in the ordering information section (Page 8, Jun.23.20 datasheet), including restricted hazardous substance status.

71V016SA10BFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-LFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3.15V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (7x7)

71V016SA10BFG8 FAQ

1.How can I place an order for 71V016SA10BFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V016SA10BFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V016SA10BFG8 reliable?

The price and inventory of 71V016SA10BFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA10BFG8 is usually 5 days.

3.What payment methods are accepted for 71V016SA10BFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA10BFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V016SA10BFG8?

71V016SA10BFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V016SA10BFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V016SA10BFG8?

For technical support, including 71V016SA10BFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA10BFG8 requirements.

6.How does Aetrix verify that 71V016SA10BFG8 is sourced from the original manufacturer or authorized distributors?

All 71V016SA10BFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA10BFG8 meets industry standards.

7.What is the process for return or replacement of 71V016SA10BFG8?

All 71V016SA10BFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA10BFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V016SA10BFG8 part is unused and in its original packaging.

Return procedure for 71V016SA10BFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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