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Renesas 71V016SA10PHG8
- Part No.:
- 71V016SA10PHG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
71V016SA10PHG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,928
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Product details
Overview
71V016SA10PHG8 from Renesas is a 64K × 16-bit, 1 Mbit high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.
For engineers reviewing the 71V016SA10PHG8 datasheet, 71V016SA10PHG8 pinout, 71V016SA10PHG8 application, or 71V016SA10PHG8 equivalent, key selection criteria include 10 ns read cycle timing, TSOP-44 package compatibility, byte-level write control, low-power standby current (45 mA max), and industrial-grade reliability for real-time control subsystems.
Technical Context
The 71V016SA10PHG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture enables independent 8-bit writes to upper (I/O8–I/O15) and lower (I/O0–I/O7) data lanes without external logic.
All control inputs (CS, OE, WE, BHE, BLE) are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V; bidirectional I/Os drive ±8 mA outputs and tolerate ±5 µA leakage. The device supports three distinct write control modes-CS-, WE-, or byte-enable–triggered-with guaranteed tWP = 7 ns minimum pulse width.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports word-wide or byte-wide data transfers |
| Access Time (tAA) | 10 ns max; enables direct interface with 100 MHz bus systems without wait states |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V LVTTL power domains |
| Operating Temperature | –40°C to +85°C; qualified for industrial control and automotive under-hood applications |
| Standby Current (ISB) | 45 mA max at fMAX; reduces system power during idle cycles without sacrificing wake-up latency |
| I/O Compatibility | LVTTL; eliminates level-shifting requirements when interfacing with FPGA I/O banks or microcontroller GPIO |
| Package | 44-pin TSOP Type II (PHG44); JEDEC-standard footprint with 0.8 mm pitch for high-density PCB layouts |
Pinout & Package
71V016SA10PHG8 is housed in a 44-pin Plastic Thin Small Outline Package (TSOP Type II, PHG44), 12.0 × 20.0 mm body size, 0.8 mm lead pitch, and JEDEC MO-143AC compliant. Pin 1 is marked by a notch or dot on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 64K memory locations; no internal latching |
| CS | Chip Select | Active-low global enable; places device in active or high-Z state based on logic level |
| OE | Output Enable | Active-low control for output drivers; enables read data only when CS and OE both low |
| WE | Write Enable | Active-low signal initiating write cycle; combined with BHE/BLE determines byte write scope |
| BHE | High-Byte Enable | Active-low control for I/O8–I/O15; allows isolated 8-bit writes to upper data byte |
| BLE | Low-Byte Enable | Active-low control for I/O0–I/O7; enables independent lower-byte writes |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit LVTTL-compliant I/O; direction controlled by CS/OE/WE state per cycle |
| VDD | Power Supply | 3.3 V core and I/O supply; requires local 0.1 µF ceramic decoupling per VDD pin |
| VSS | Ground | Signal and power ground reference; two dedicated pins minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables zero-wait-state operation with 100 MHz synchronous peripherals and FPGAs |
| Independent byte write control | Eliminates need for external byte-mask logic in mixed-data-width systems |
| Single 3.3 V supply | Reduces board-level power conversion complexity and component count |
| Industrial temperature range | Validated operation across –40°C to +85°C without derating or thermal management |
| Low dynamic standby current | 45 mA max ISB ensures <150 mW standby power at 3.3 V, critical for battery-backed systems |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Real-time buffering of sensor input streams and control command queues in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM providing deterministic 10 ns read/write response for deterministic scan-cycle execution. Use Value: Byte-enable capability allows selective update of status registers and I/O mapping tables without disturbing adjacent memory regions. |
Use Scenario: Temporary storage of digitized X-ray or ultrasound frames prior to compression and transmission. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer interfaced directly to ADC/DAC controllers and DMA engines. Use Value: 16-bit bus width and 10 ns access support >80 MB/s sustained throughput for real-time image capture pipelines. |
| Avionics Display Controller Cache | Test Equipment Pattern Memory |
|
Use Scenario: Storing display list instructions and pixel attribute data in ruggedized cockpit display units. IC Role / Device Role / Timing Role: Non-refreshing memory serving as instruction/data cache for graphics co-processors operating in harsh EMI environments. Use Value: Industrial temperature rating and LVTTL compatibility ensure reliable operation without thermal throttling or signal integrity degradation. |
Use Scenario: Holding stimulus/response patterns in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access memory enabling precise timing alignment between pattern generation and measurement capture. Use Value: Guaranteed 10 ns tAA and tWC allow sub-100 ns pattern loop execution, critical for high-speed parametric testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 1 Mbit (64K × 16), 10 ns, 3.3 V, SOIC-44; higher ICC (180 mA vs. 160 mA), no BHE/BLE pins | Requires external byte masking logic; less suitable for partial-word updates | Preferred where board space permits SOIC and byte masking is handled externally |
| AS6C1008-10TIN | 1 Mbit (128K × 8), 10 ns, 3.3 V, TSOP-32; 8-bit bus, no byte enables, lower ISB (30 mA) | Requires data bus widening or dual-device configuration for 16-bit interfaces | Optimal for cost-sensitive 8-bit systems where 16-bit width is not mandatory |
Compared with CY62167EV30LL-10ZSXI and AS6C1008-10TIN, the 71V016SA10PHG8 uniquely delivers native 16-bit width, integrated BHE/BLE, and TSOP-44 packaging-enabling compact, low-component-count designs for deterministic real-time memory access.
Availability
71V016SA10PHG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics display systems, and automated test equipment requiring stable component supply and long-term lifecycle continuity.
Supply support for 71V016SA10PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V016SA10PHG8 belongs to Renesas' legacy high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and precise timing control are essential.
FAQ
What is the maximum operating frequency supported by the 71V016SA10PHG8?
The 71V016SA10PHG8 does not operate on a clock; it is an asynchronous SRAM. Its 10 ns access time (tAA) and 10 ns cycle time (tRC) define its maximum effective bandwidth-supporting up to 100 million random accesses per second in burst-free operation. System-level timing depends on controller setup/hold margins, not an internal clock frequency.
Does the 71V016SA10PHG8 require external refresh circuitry?
No, the 71V016SA10PHG8 is a fully static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and within specification. This eliminates refresh overhead and timing uncertainty found in DRAMs, making it ideal for deterministic real-time systems.
Can the 71V016SA10PHG8 be used with a 5 V microcontroller interface?
No-the 71V016SA10PHG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH is specified at ≥ 2.0 V-not 5 V tolerant. Direct connection to 5 V logic will exceed voltage ratings and risk damage. Level translation is mandatory for 5 V host interfaces.
What is the function of the BHE and BLE pins on the 71V016SA10PHG8?
BHE (High-Byte Enable) and BLE (Low-Byte Enable) are active-low control inputs that independently gate writes to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When only one is asserted, the corresponding 8-bit portion is written while the other remains unchanged-enabling efficient partial-word updates without read-modify-write sequences.
Is the 71V016SA10PHG8 RoHS-compliant and halogen-free?
Yes-the 71V016SA10PHG8 is a green part (per ordering code suffix 'G') and complies with RoHS Directive 2011/65/EU and JEDEC JS709B for halogen content. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and meets Renesas' material declaration standards.
71V016SA10PHG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3.15V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
71V016SA10PHG8 FAQ
1.How can I place an order for 71V016SA10PHG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA10PHG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA10PHG8 reliable?
The price and inventory of 71V016SA10PHG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA10PHG8 is usually 5 days.
3.What payment methods are accepted for 71V016SA10PHG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA10PHG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V016SA10PHG8?
71V016SA10PHG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA10PHG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA10PHG8?
For technical support, including 71V016SA10PHG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA10PHG8 requirements.
6.How does Aetrix verify that 71V016SA10PHG8 is sourced from the original manufacturer or authorized distributors?
All 71V016SA10PHG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA10PHG8 meets industry standards.
7.What is the process for return or replacement of 71V016SA10PHG8?
All 71V016SA10PHG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA10PHG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA10PHG8 part is unused and in its original packaging.
Return procedure for 71V016SA10PHG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V016SA10PHG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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