Renesas 71V016SA10PHGI

Overview

71V016SA10PHGI from Renesas Electronics is a 1 Mbit (64K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, industrial temperature range (–40°C to +85°C), and TSOP-44 packaging. It supports byte-wide and word-wide read/write operations via dedicated BHE/BLE pins and features LVTTL-compatible I/O for seamless integration into legacy and modern embedded memory subsystems.

For engineers reviewing the 71V016SA10PHGI datasheet, 71V016SA10PHGI pinout, 71V016SA10PHGI application, or 71V016SA10PHGI equivalent, key selection criteria include its 10 ns read cycle time, industrial-grade reliability, TSOP-44 footprint compatibility, and support for asynchronous byte-select control in space-constrained industrial controllers and communications buffers.

Technical Context

This device implements a fully static asynchronous architecture-no clocks or refresh required-with independent chip select (CS), output enable (OE), write enable (WE), and dual byte enables (BHE/BLE) enabling precise control over 16-bit data bus partitioning. Its LVTTL-compatible bidirectional I/Os operate at 3.3 V with VIH = 2.0 V min and VIL = 0.8 V max.

Timing is defined by overlapping control signals: read cycles require CS and OE low with WE high; write cycles require CS, WE, and at least one byte enable low. The 10 ns speed grade guarantees tAA ≤ 10 ns, tRC ≤ 10 ns, and tOE ≤ 5 ns under industrial conditions (VDD = 3.15–3.6 V, TA = –40°C to +85°C).

Key Specifications

Pinout & Package

71V016SA10PHGI is housed in a 44-pin Plastic Thin Small Outline Package (TSOP Type II), JEDEC MO-143AC compliant, with 0.8 mm lead pitch and body dimensions of 12.0 × 18.4 mm. Pin 1 is marked by a notch or dot; package is lead-free and RoHS-compliant per ordering suffix "G" and "I".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62167EV30LL-10ZSXI and IS61LV25616AL-10TLI, the 71V016SA10PHGI offers tighter industrial standby current (10 µA vs. 15–25 µA), guaranteed BHE/BLE timing (tBE ≤ 5 ns), and native TSOP-II compatibility - making it optimal for thermally demanding, power-sensitive, and pinout-constrained designs.

Availability

71V016SA10PHGI is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging subsystems, avionics data loggers, and test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V016SA10PHGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with deep expertise in memory, microcontrollers, and analog products.

The 71V016SA series was developed by IDT (acquired by Renesas in 2019) specifically for high-reliability, low-latency asynchronous memory applications in industrial and communications equipment requiring deterministic timing and extended temperature operation.

FAQ

What is the maximum operating frequency supported by the 71V016SA10PHGI?

The 71V016SA10PHGI is an asynchronous SRAM and does not use a clock signal, so it has no maximum operating frequency specification. Instead, its performance is defined by timing parameters: tRC ≤ 10 ns (read cycle time) and tWC ≤ 10 ns (write cycle time). These values allow reliable interfacing with bus systems running up to 100 MHz (10 ns period), assuming proper setup/hold timing is met. The 71V016SA10PHGI achieves this without clock domain constraints or refresh overhead.

Does the 71V016SA10PHGI support battery backup operation?

Yes, the 71V016SA10PHGI supports battery backup via its low standby current: ISB1 = 10 µA (full static standby) and ISB = 30–45 mA (dynamic standby) at VDD = 3.6 V. When VDD drops below the minimum operating voltage (3.15 V), the device enters a data-retention mode where data is preserved as long as VDD remains above ~1.5 V and ambient temperature stays within specification. This makes the 71V016SA10PHGI suitable for non-volatile logging and configuration storage with external backup batteries or supercapacitors.

Can the 71V016SA10PHGI be used with 5 V TTL logic interfaces?

No, the 71V016SA10PHGI is strictly a 3.3 V LVTTL device and is not 5 V tolerant. Its absolute maximum input voltage is VDD + 0.5 V = 4.1 V, and VIH is specified as ≥2.0 V (not 2.0 V ± 0.5 V). Driving its inputs directly from 5 V TTL outputs risks permanent damage and violates the 71V016SA10PHGI's recommended operating conditions. Interfacing with 5 V systems requires level-shifting circuitry - such as dual-supply translators (e.g., TXB0108) or resistor-divider networks validated for timing compliance.

What is the meaning of the "PHGI" suffix in 71V016SA10PHGI?

In the 71V016SA10PHGI part number, "PHG" denotes the 44-pin TSOP Type II package (PHG44), and "I" indicates industrial temperature range (–40°C to +85°C). The "10" specifies the 10 ns speed grade (tAA ≤ 10 ns, tRC ≤ 10 ns), and "SA" identifies the 3.3 V core voltage and advanced CMOS process. The full designation confirms that the 71V016SA10PHGI is a 10 ns industrial-grade TSOP-packaged SRAM - distinct from commercial-grade (no "I") or FBGA-packaged (e.g., "BFGI") variants of the same speed and voltage.

How does the 71V016SA10PHGI handle simultaneous read and write operations on the same address?

The 71V016SA10PHGI does not support true simultaneous read/write (i.e., no dual-port architecture). If CS is active and both OE and WE are asserted low at the same time, the device enters an undefined state per the truth table: outputs go high-impedance (High-Z) and internal write behavior is not guaranteed. To avoid bus contention or data corruption, system design must ensure mutually exclusive OE and WE assertion - typically using a controller that sequences reads and writes with appropriate interlocks. This behavior is inherent to the 71V016SA10PHGI's single-port asynchronous architecture.