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Renesas 71V016SA12BF8

Part No.:
71V016SA12BF8
Manufacturer:
Renesas
Category:
Memory
Package:
48-LFBGA
Datasheet:
Aetrix71V016SA12BF8.pdf
Description:
IC SRAM 1MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,370

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Product details

Overview

71V016SA12BF8 from Renesas Electronics is a 3.3V, 1-Megabit (64K × 16) high-speed CMOS static RAM with 12 ns access time, industrial-grade temperature range (–40°C to +85°C), LVTTL-compatible I/O, and byte-enable control - used in real-time embedded controllers requiring deterministic memory access without refresh overhead.

For engineers reviewing the 71V016SA12BF8 datasheet, 71V016SA12BF8 pinout, 71V016SA12BF8 application, or 71V016SA12BF8 equivalent, this page delivers verified timing specs, FBGA-48 package mapping, byte-select functionality, standby current (ISB = 40 mA), and industrial-temperature validation - all critical for legacy system replacement and avionics data buffering.

Technical Context

The 71V016SA12BF8 implements fully static asynchronous circuitry with no clocks or refresh required. Its dual-byte enable (BHE/BLE) supports independent 8-bit read/write operations on upper and lower data bytes, while the single 3.3V supply simplifies power rail design.

It features three distinct enable paths: chip select (CS), output enable (OE), and byte enables (BHE/BLE), each with defined timing windows (tCLZ = 4 ns, tOE = 6 ns, tBE = 6 ns). All inputs and outputs are LVTTL-compatible, ensuring interoperability with legacy 3.3V logic families.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size64K × 16-bit (1,048,576 bits) - provides word-aligned storage for 16-bit microcontrollers and DSPs.
Access Time12 ns max - guarantees sub-83 MHz bus operation with margin for PCB trace delays.
Supply Voltage3.15 V to 3.6 V - compatible with standard 3.3V LVTTL systems; no level-shifting needed.
Operating Temperature–40°C to +85°C - qualified for industrial and extended-temperature embedded applications.
Standby Current40 mA max (ISB) - enables low-power hold mode during processor sleep without data loss.
I/O InterfaceLVTTL-compatible bidirectional I/O - directly interfaces with FPGA I/O banks and MCU data buses.
Package48-ball FBGA (7 mm × 7 mm, BFG48) - compact footprint suitable for space-constrained PCB layouts.

Pinout & Package

71V016SA12BF8 is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 0.8 mm ball pitch and bottom-side thermal pad. The package supports automated optical inspection and reflow soldering per IPC-J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus for full 64K-word addressing; no internal multiplexing.
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit data path enabled only when BLE = L; isolated from high byte during partial writes.
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit data path enabled only when BHE = L; allows independent 16-bit or byte-level transfers.
CSChip SelectActive-low global enable; device enters standby (ISB1 = 10 mA) when high.
OEOutput EnableActive-low control for output drivers; tOE = 6 ns ensures fast read response after CS assertion.
WEWrite EnableActive-low write strobe; tWP = 8 ns minimum pulse width defines shortest write cycle.
BHEHigh-Byte EnableActive-low control for I/O8–I/O15; enables high-byte reads/writes without affecting low byte.
BLELow-Byte EnableActive-low control for I/O0–I/O7; permits byte-granular memory updates in mixed-data-width systems.
VDDPower Supply3.3V primary supply; two dedicated VDD balls reduce IR drop and switching noise.
VSSGroundGround reference; four VSS balls provide low-inductance return paths for I/O and core logic.

Key Features

FeatureDesign Value
Byte-select architectureIndependent BHE/BLE pins enable true 8-bit partial writes - avoids read-modify-write cycles in 16-bit systems.
Zero-refresh static operationFully asynchronous design eliminates clock tree, refresh controller, and associated timing constraints.
Industrial temperature qualification–40°C to +85°C operation validated across speed grade and package - suitable for motor drives and railway control units.
Low-Z output enable timingtOLZ = 0 ns ensures immediate data bus availability after OE assertion - critical for burst-mode DMA transfers.
Green packaging optionHalogen-free, RoHS-compliant BFG48 package meets IPC-1752A material declaration requirements.

Applications

Industrial PLC Memory BufferAvionics Data Logger

Use Scenario: Stores real-time sensor fusion data from multiple CAN and analog channels in programmable logic controllers during deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-blocking 12 ns read/write access to CPU and DMA engines without arbitration delay.

Use Value: Eliminates wait states in 16-bit bus interfaces and sustains >83 MB/s sustained throughput under worst-case temperature conditions.

Use Scenario: Captures flight-critical telemetry (GPS, IMU, engine parameters) at 10 kHz sampling rate in airborne black box recorders.

IC Role / Device Role / Timing Role: High-reliability buffer holding pre-triggered snapshots before flash write; operates continuously across –40°C to +85°C ambient.

Use Value: Enables zero-latency capture with byte-enable granularity - allowing selective overwrite of non-critical fields without disturbing mission-critical headers.

Radar Signal Processor CacheMedical Imaging Frame Buffer

Use Scenario: Holds intermediate FFT coefficients and beamforming weights in X-band radar front-ends with strict latency budgets.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory supporting pipelined processing chains where clock domain crossing must be avoided.

Use Value: Delivers consistent 12 ns access regardless of address pattern - unlike DRAM, no row/column activation penalties or refresh-induced jitter.

Use Scenario: Buffers uncompressed 12-bit ultrasound image frames (1920×1080 @ 30 fps) in portable diagnostic devices before JPEG compression.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via time-multiplexed CS/OE/WE) serving as line buffer and frame store in ASIC-based imaging pipelines.

Use Value: Supports simultaneous read (DMA to encoder) and write (ADC interface) via byte-enable isolation - preventing bus contention without external logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI45 ns access time; 32K × 16 organization; 2.2–3.6 V supply; 48-TSOP packageLower density and slower speed; suited for cost-sensitive, non-real-time bufferingSelect when 12 ns timing is unnecessary and TSOP layout compatibility is prioritized over FBGA miniaturization.
AS6C1008-12TIN12 ns access; 64K × 16; 3.3 V only; 44-pin SOJ package; ISB = 30 mA typicalSame speed and density but SOJ packaging limits board density and thermal performanceChoose for through-hole prototyping or legacy SOJ socket reuse where FBGA rework capability is unavailable.

Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12BF8 uniquely combines industrial-temperature FBGA packaging, byte-select precision, and 12 ns access in a single 3.3V supply - making it optimal for new designs demanding compactness, thermal robustness, and deterministic timing.

Availability

71V016SA12BF8 is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, radar signal processors, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V016SA12BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V016SA12BF8 belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V016SA12BF8?

The 71V016SA12BF8 does not operate on a clock; it is an asynchronous SRAM. Its 12 ns access time supports effective bus frequencies up to approximately 83 MHz (1/12 ns) in systems with zero wait-state timing. Actual achievable bandwidth depends on system-level timing margins, PCB layout, and controller interface capabilities - but the 71V016SA12BF8 itself imposes no clock requirement or frequency ceiling.

Does the 71V016SA12BF8 require external refresh circuitry?

No, the 71V016SA12BF8 is a fully static RAM and requires no refresh circuitry or periodic access to retain data. Its CMOS latch-based memory cells maintain state indefinitely as long as VDD remains within specification (3.15 V to 3.6 V) and ambient temperature stays within –40°C to +85°C. This eliminates refresh overhead and timing uncertainty inherent in DRAM - a key advantage of the 71V016SA12BF8 in real-time systems.

Can the 71V016SA12BF8 be used with 5V-tolerant microcontrollers?

No - the 71V016SA12BF8 is strictly a 3.3V LVTTL device with VIH(max) = VDD + 0.3 V and VIL(min) = –0.3 V. It is not 5V-tolerant. Direct connection to 5V logic will exceed absolute maximum input voltage ratings and risk permanent damage. Interfacing with 5V systems requires level translation, such as TI SN74AVC4T245 or similar dual-supply translators, to protect the 71V016SA12BF8 inputs and ensure valid signal thresholds.

What is the function of the BHE and BLE pins on the 71V016SA12BF8?

The BHE (High-Byte Enable) and BLE (Low-Byte Enable) pins on the 71V016SA12BF8 independently control access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When BHE = L and BLE = H, only the high byte is active; when BLE = L and BHE = H, only the low byte is active; when both are L, full 16-bit word access occurs. This enables precise byte-granular writes without read-modify-write sequences - a core functional feature of the 71V016SA12BF8.

Is the 71V016SA12BF8 pin-compatible with other speed grades in the same package?

Yes - all 71V016SAxxBF8 variants (e.g., 71V016SA10BF8, 71V016SA15BF8) share identical BFG48 pinout, ball assignment, and electrical interface. Speed grade differences affect only timing parameters (e.g., tAA, tRC) and AC characteristics; DC specifications, pin functions, and package dimensions remain unchanged. This allows drop-in replacement during design optimization or cost/performance trade-offs - provided system timing margins accommodate the selected speed grade's specifications.

71V016SA12BF8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-LFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (7x7)

71V016SA12BF8 FAQ

1.How can I place an order for 71V016SA12BF8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V016SA12BF8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V016SA12BF8 reliable?

The price and inventory of 71V016SA12BF8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12BF8 is usually 5 days.

3.What payment methods are accepted for 71V016SA12BF8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12BF8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V016SA12BF8?

71V016SA12BF8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V016SA12BF8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V016SA12BF8?

For technical support, including 71V016SA12BF8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12BF8 requirements.

6.How does Aetrix verify that 71V016SA12BF8 is sourced from the original manufacturer or authorized distributors?

All 71V016SA12BF8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12BF8 meets industry standards.

7.What is the process for return or replacement of 71V016SA12BF8?

All 71V016SA12BF8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12BF8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V016SA12BF8 part is unused and in its original packaging.

Return procedure for 71V016SA12BF8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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