Renesas 71V016SA12BFG
- Part No.:
- 71V016SA12BFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
71V016SA12BFG.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48CABGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,271
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Product details
Overview
71V016SA12BFG from Renesas Electronics is a 1,048,576-bit (64K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/Os, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and networking equipment.
For engineers reviewing the 71V016SA12BFG datasheet, 71V016SA12BFG pinout, 71V016SA12BFG application, or 71V016SA12BFG equivalent, key selection criteria include 12 ns read cycle timing, FBGA-48 package compatibility, byte-wide write control, low-power standby current (40 mA max), and industrial-grade reliability for real-time data buffering.
Technical Context
The 71V016SA12BFG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture allows independent 8-bit writes to upper (I/O8–I/O15) and lower (I/O0–I/O7) data lanes without external logic.
Timing is controlled via three independent enable paths: CS-driven, OE-driven, and BHE/BLE-driven write cycles, each with defined setup/hold and pulse-width requirements (e.g., tWP ≥ 8 ns, tAS = 0 ns). All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V ±0.3 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1 Mbit total); supports word-wide (16-bit) or byte-wide (8-bit) data transfers |
| Access Time (tAA) | 12 ns max; enables direct interface with 80 MHz bus systems without wait states |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V LVTTL logic rails and power domains |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including base station control and motor drives |
| Standby Current (ISB) | 40 mA max; reduces system power during idle periods without sacrificing wake-up latency |
| I/O Compatibility | LVTTL; eliminates level-shifting requirements when interfacing with FPGA I/O banks or microcontroller GPIO |
| Package | 48-ball FBGA (BFG48), 7 mm × 7 mm, 0.8 mm pitch; supports high-density PCB layouts with improved thermal dissipation vs. SOJ/TSOP |
Pinout & Package
71V016SA12BFG is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 7 mm × 7 mm footprint and 0.8 mm ball pitch. The package supports automated optical inspection (AOI) and offers superior thermal performance over SOJ/TSOP alternatives.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 64K memory locations; no internal latching required |
| I/O0–I/O7 | Lower Byte Data I/O | Bidirectional 8-bit data path enabled only when BLE = L; isolated from upper byte during partial writes |
| I/O8–I/O15 | Upper Byte Data I/O | Bidirectional 8-bit data path enabled only when BHE = L; prevents bus contention in mixed-byte systems |
| CS | Chip Select | Active-low global enable; places device in standby (high-Z I/O) when deasserted |
| OE | Output Enable | Active-low control for read data output; decouples memory access from bus arbitration timing |
| WE | Write Enable | Active-low signal initiating write cycle; defines tWC (12 ns min) and tWP (8 ns min) timing windows |
| BHE | High Byte Enable | Active-low control enabling I/O8–I/O15; allows 8-bit writes without disturbing lower byte |
| BLE | Low Byte Enable | Active-low control enabling I/O0–I/O7; supports byte-aligned firmware updates and buffer management |
| VDD | Power Supply | 3.3 V core and I/O supply; requires local 0.1 µF ceramic decoupling per VDD ball |
| VSS | Ground | Signal and power ground reference; multiple VSS balls reduce ground bounce in high-speed reads/writes |
Key Features
| Feature | Design Value |
|---|---|
| Byte-selectable write capability | Independent BHE/BLE pins enable true 8-bit writes-critical for legacy ISA bus emulation and EEPROM replacement |
| Zero-bus-turnaround read/write switching | tOH = 4 ns ensures stable data hold after address change, eliminating dead cycles between back-to-back accesses |
| Low-latency output enable | tOE = 6 ns max guarantees fast read response under dynamic bus arbitration, reducing CPU wait states |
| Industrial-grade reliability | Qualified across –40°C to +85°C with 10 µA max input leakage and 5 mA output drive-suitable for uncontrolled ambient deployments |
| Green-compliant packaging | BFG48 package meets RoHS and halogen-free requirements per Renesas ordering code "G" suffix |
Applications
| Industrial PLC Data Buffering | Network Packet Memory |
|---|---|
Use Scenario: Storing real-time sensor values and control commands in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed static RAM providing non-refreshed, sub-15 ns read/write access for cyclic data exchange between CPU and I/O modules. Use Value: Eliminates DRAM refresh overhead and enables guaranteed 12 ns access within tight 50 µs PLC scan windows. | Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or filtering decisions. IC Role / Device Role / Timing Role: Asynchronous SRAM acting as packet buffer memory with byte-enable support for variable-length frame headers and payloads. Use Value: BHE/BLE pins allow header-only writes without corrupting payload bytes, improving throughput in cut-through switching architectures. |
| Medical Imaging Frame Store | Avionics Display Controller Cache |
Use Scenario: Holding digitized X-ray or ultrasound frames during preprocessing prior to compression or display rendering. IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant (industrial temp-rated) memory storing full 1024×768 pixel buffers at 16-bit depth. Use Value: 64K × 16 organization matches common image line buffers; 12 ns access sustains >80 MB/s sustained bandwidth for real-time preview. | Use Scenario: Caching graphics primitives and font glyphs in flight deck display units requiring certified component lifetime. IC Role / Device Role / Timing Role: Non-volatile-supporting SRAM used as fast-access cache between ARM-based display processor and serial flash storage. Use Value: Industrial temperature rating and green FBGA package meet DO-254/DO-160 environmental compliance for avionics mounting locations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16 organization, 45 ns access, 3.3 V, TSOP-44 package | Slower speed and larger density; suited for cost-sensitive, non-real-time buffering | Select when 45 ns latency is acceptable and board layout accommodates TSOP instead of FBGA |
| IS61LV25616AL-12MLI | 256K × 16 organization, 12 ns access, 3.3 V, TSOP-44 package | Higher density but same speed; lacks industrial temp option in standard grade | Choose for higher capacity needs where industrial qualification is not mandatory and TSOP footprint is preferred |
Compared with CY62167EV30LL-45ZSXI and IS61LV25616AL-12MLI, the 71V016SA12BFG delivers optimal balance of 12 ns speed, industrial temperature support, and compact FBGA packaging-making it ideal for space-constrained, real-time embedded systems where timing determinism and environmental robustness are critical.
Availability
71V016SA12BFG is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet memory, medical imaging frame store, and avionics display controller cache requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V016SA12BFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V016SA12BFG belongs to Renesas' legacy IDT high-speed SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time control and communications systems.
FAQ
What is the maximum operating frequency supported by the 71V016SA12BFG?
The 71V016SA12BFG does not operate on a clock signal-it is an asynchronous SRAM. Its 12 ns access time (tAA) and 12 ns read cycle time (tRC) support reliable interfacing with bus systems running up to approximately 80 MHz (1/12 ns ≈ 83 MHz theoretical limit), assuming zero wait-state timing margins. System-level frequency depends on controller setup/hold times and board trace delays, not an internal clock.
Does the 71V016SA12BFG require refresh circuitry or periodic memory maintenance?
No, the 71V016SA12BFG is a fully static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and operating conditions remain within specification-making it ideal for deterministic real-time systems where refresh-induced latency or unpredictability is unacceptable.
Can the 71V016SA12BFG be used with 5 V logic interfaces?
No-the 71V016SA12BFG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH threshold is specified at ≥ 2.0 V (not 5 V TTL's 2.0 V minimum). Direct connection to 5 V logic risks damage or unreliable operation; level translation is required for mixed-voltage systems.
What is the function of the BHE and BLE pins on the 71V016SA12BFG?
The BHE (High Byte Enable) and BLE (Low Byte Enable) pins on the 71V016SA12BFG provide independent 8-bit write control: BHE enables writes to I/O8–I/O15 (upper byte), BLE enables writes to I/O0–I/O7 (lower byte). When both are active low, full 16-bit word writes occur; either can be asserted alone for byte-aligned updates-essential for firmware patching, protocol header manipulation, and memory-mapped peripheral registers.
Is the 71V016SA12BFG RoHS compliant and halogen-free?
Yes-the "G" suffix in 71V016SA12BFG explicitly denotes Renesas' Green (RoHS-compliant and halogen-free) packaging. This FBGA package meets EU Directive 2011/65/EU (RoHS 2) and IEC 61249-2-21:2012 standards, with lead-free solderability and absence of brominated flame retardants (BFRs), chlorinated flame retardants (CFRs), and antimony trioxide.
71V016SA12BFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (7x7)
71V016SA12BFG FAQ
1.How can I place an order for 71V016SA12BFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA12BFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA12BFG reliable?
The price and inventory of 71V016SA12BFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12BFG is usually 5 days.
3.What payment methods are accepted for 71V016SA12BFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12BFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V016SA12BFG?
71V016SA12BFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA12BFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA12BFG?
For technical support, including 71V016SA12BFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12BFG requirements.
6.How does Aetrix verify that 71V016SA12BFG is sourced from the original manufacturer or authorized distributors?
All 71V016SA12BFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12BFG meets industry standards.
7.What is the process for return or replacement of 71V016SA12BFG?
All 71V016SA12BFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12BFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA12BFG part is unused and in its original packaging.
Return procedure for 71V016SA12BFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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