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Renesas 71V016SA12BFG8

Part No.:
71V016SA12BFG8
Manufacturer:
Renesas
Category:
Memory
Package:
48-LFBGA
Datasheet:
Aetrix71V016SA12BFG8.pdf
Description:
IC SRAM 1MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,239

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Product details

Overview

71V016SA12BFG8 from Renesas Electronics is a 1,048,576-bit (64K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.

For engineers reviewing the 71V016SA12BFG8 datasheet, 71V016SA12BFG8 pinout, 71V016SA12BFG8 application, or 71V016SA12BFG8 equivalent, key selection criteria include 12 ns read cycle time, 48-ball FBGA (BFG48) package compatibility, byte-selectable 16-bit data bus, low-power standby current (40 mA max), and industrial-grade reliability for real-time control subsystems.

Technical Context

The 71V016SA12BFG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture allows independent access to upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during read/write cycles.

Timing is governed by three independent control paths: CS-controlled, OE-controlled, and BHE/BLE-controlled write operations, each with defined setup/hold and pulse-width requirements (e.g., tWP = 8 ns min, tAS = 0 ns). All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V supply.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1,048,576-bit (64K × 16) - supports 16-bit microprocessor data buses without external multiplexing
Access Time (tAA)12 ns max - enables direct interface with 83 MHz bus systems (1/12 ns ≈ 83 MHz)
Supply Voltage3.15 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±5% regulation variation
Operating Temperature–40°C to +85°C - qualified for industrial automation, motor drives, and outdoor instrumentation
Standby Current (ISB)40 mA max - reduces power in idle states while maintaining data retention
I/O InterfaceLVTTL-compatible - ensures seamless signal integrity with FPGA, ASIC, and MCU I/O banks rated for 3.3 V
Package48-ball plastic FBGA (BFG48), 7 mm × 7 mm - supports high-density PCB layouts with fine-pitch routing

Pinout & Package

71V016SA12BFG8 is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 0.8 mm ball pitch and 7 mm × 7 mm body size. The package supports automated optical inspection and reflow soldering per IPC-J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus accepting full 64K word locations; no internal latching required
I/O0–I/O7Lower Byte Data I/OBidirectional 8-bit data path enabled only when BLE = LOW; tristated otherwise
I/O8–I/O15Upper Byte Data I/OBidirectional 8-bit data path enabled only when BHE = LOW; tristated otherwise
CSChip SelectActive-low global enable; device enters standby (high-Z I/O, low ISB) when HIGH
OEOutput EnableActive-low control for output drivers; allows read data gating without deselecting chip
WEWrite EnableActive-low write strobe; initiates write cycle when CS and byte enables are also active
BHEHigh Byte EnableActive-low control for upper byte (I/O8–I/O15); enables partial writes to top half of data bus
BLELow Byte EnableActive-low control for lower byte (I/O0–I/O7); enables partial writes to bottom half of data bus
VDDPower Supply3.3 V core and I/O supply; requires local 0.1 µF ceramic decoupling per VDD ball
VSSGroundReference return for all signals and power; multiple balls ensure low-inductance grounding

Key Features

FeatureDesign Value
Byte-selectable 16-bit interfaceIndependent BHE/BLE pins allow simultaneous or staggered 8-bit writes-critical for mixed-endian processor interfaces
12 ns guaranteed access timeMeets timing closure for 83 MHz synchronous bus protocols without wait states
Industrial temperature qualificationValidated operation from –40°C to +85°C ensures reliability in uncontrolled environments like factory floors
Low-power standby mode40 mA max ISB enables energy-sensitive applications such as battery-backed data loggers
48-ball FBGA footprint7 mm × 7 mm body with 0.8 mm pitch balances density, thermal performance, and manufacturability

Applications

Industrial PLC Memory BufferMedical Imaging Frame Store

Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers requiring deterministic memory access.

IC Role / Device Role / Timing Role: Primary 64K × 16 working memory bank interfaced directly to ARM9 or ColdFire MCU local bus.

Use Value: 12 ns tAA eliminates wait states, enabling 100+ kcycles/s scan rates; industrial temp rating ensures uptime in cabinet-mounted enclosures.

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames before compression and transmission.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer between ADC interface and DSP engine, operating in burst-read mode.

Use Value: Bidirectional LVTTL I/O sustains >60 MB/s sustained throughput; low tCLZ (4 ns) minimizes bus turnaround latency.

Avionics Data RecorderTest Equipment Pattern Memory

Use Scenario: Non-volatile event capture in flight data recorders where SRAM retains critical telemetry during power loss.

IC Role / Device Role / Timing Role: Battery-backed memory node holding last 30 seconds of sensor data prior to crash-triggered save.

Use Value: Full static operation requires zero refresh overhead; ISB1 = 10 µA enables >72-hour backup runtime on coin cell.

Use Scenario: Storage of stimulus/response patterns in automated test equipment for semiconductor validation.

IC Role / Device Role / Timing Role: Dual-port accessible memory mapped into tester controller's address space for rapid pattern loading.

Use Value: Separate BHE/BLE enables independent write of upper/lower bytes-accelerating pattern generation for multi-pin DUTs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI45 ns access time, 512K × 16 density, 3.3 V supply, TSOP-44 packageSlower speed but higher density; lacks byte enables; suited for non-real-time bufferingSelect only if system clock < 22 MHz and board layout cannot accommodate FBGA
AS6C1008-12TIN12 ns access, 128K × 8 density, 3.3 V supply, SOJ-32 package8-bit bus width, no BHE/BLE, commercial temp only (0°C to +70°C)Use only for cost-sensitive, non-industrial designs with narrow data paths and no byte-write requirement

Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12BFG8 uniquely delivers 12 ns access, industrial temperature support, byte-select capability, and FBGA packaging-making it the only option for space-constrained, real-time embedded systems demanding deterministic 16-bit memory access.

Availability

71V016SA12BFG8 is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics data recorders, and automated test equipment requiring stable component supply across extended product lifecycles.

Supply support for 71V016SA12BFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V016SA12BFG8 belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded control and instrumentation systems.

FAQ

What is the maximum operating frequency supported by the 71V016SA12BFG8?

The 71V016SA12BFG8 does not operate on a clock signal-it is a fully static asynchronous SRAM. Its 12 ns access time (tAA) supports reliable interfacing with bus systems running up to approximately 83 MHz (1/12 ns), assuming zero wait-state timing margins. System-level frequency depends on controller timing constraints, not an internal clock.

Does the 71V016SA12BFG8 require external refresh circuitry?

No, the 71V016SA12BFG8 is a static RAM and contains no capacitive storage cells. It retains data indefinitely as long as VDD remains within specification (3.15 V–3.6 V) and ambient temperature stays within –40°C to +85°C. No refresh cycles, timers, or external support circuitry are needed.

Can the 71V016SA12BFG8 be used with a 5 V microcontroller interface?

No-the 71V016SA12BFG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic violates absolute maximum ratings and risks permanent damage. Level-shifting circuitry is mandatory for 5 V host interfaces.

What is the purpose of the BHE and BLE pins on the 71V016SA12BFG8?

The BHE (High Byte Enable) and BLE (Low Byte Enable) pins on the 71V016SA12BFG8 independently control access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When asserted low, they enable reads/writes to their respective 8-bit segments-enabling efficient partial-word transfers without affecting the other byte, essential for mixed-data-width processors.

Is the 71V016SA12BFG8 RoHS-compliant and halogen-free?

Yes-the 71V016SA12BFG8 is a green part per Renesas' ordering nomenclature ('G' suffix), meaning it complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. This is confirmed in the "Ordering Information" section of the official Renesas datasheet (Rev. Jun.23.20).

71V016SA12BFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-LFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (7x7)

71V016SA12BFG8 FAQ

1.How can I place an order for 71V016SA12BFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V016SA12BFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V016SA12BFG8 reliable?

The price and inventory of 71V016SA12BFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12BFG8 is usually 5 days.

3.What payment methods are accepted for 71V016SA12BFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12BFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V016SA12BFG8?

71V016SA12BFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V016SA12BFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V016SA12BFG8?

For technical support, including 71V016SA12BFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12BFG8 requirements.

6.How does Aetrix verify that 71V016SA12BFG8 is sourced from the original manufacturer or authorized distributors?

All 71V016SA12BFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12BFG8 meets industry standards.

7.What is the process for return or replacement of 71V016SA12BFG8?

All 71V016SA12BFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12BFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V016SA12BFG8 part is unused and in its original packaging.

Return procedure for 71V016SA12BFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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