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Renesas 71V016SA12BFGI

Part No.:
71V016SA12BFGI
Manufacturer:
Renesas
Category:
Memory
Package:
48-LFBGA
Datasheet:
Aetrix71V016SA12BFGI.pdf
Description:
IC SRAM 1MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,180

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Product details

Overview

71V016SA12BFGI from Renesas Electronics is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM operating at 3.3 V, with 12 ns access time, industrial temperature range (–40°C to +85°C), and FBGA-48 (7 mm × 7 mm) packaging. It features separate byte enable (BHE/BLE), LVTTL-compatible I/Os, and fully static asynchronous operation-used in real-time embedded controllers, network packet buffers, and FPGA configuration memory.

For engineers reviewing the 71V016SA12BFGI datasheet, 71V016SA12BFGI pinout, 71V016SA12BFGI application, or 71V016SA12BFGI equivalent, key selection criteria include its 12 ns read cycle time, industrial-grade reliability, byte-select capability, low-power standby current (40 mA max), and compatibility with legacy SRAM-based bus interfaces in telecom and industrial control systems.

Technical Context

The 71V016SA12BFGI implements a fully static asynchronous architecture with no clocks or refresh required. Its address decoding supports concurrent access via A0–A15, while independent BHE and BLE pins enable selective 8-bit writes without disturbing adjacent bytes.

Operation relies on three core control signals: CS (chip select), WE (write enable), and OE (output enable), each with defined timing windows (e.g., tACS ≤ 12 ns, tOE ≤ 6 ns). All I/Os are bidirectional and LVTTL-compatible, supporting direct interfacing with 3.3 V microcontrollers and FPGAs without level translation.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization64K × 16-bit (1,048,576 bits); supports word-wide data transfers in 16-bit bus systems.
Access Time (tAA)12 ns max; enables integration into 83 MHz synchronous bus designs with sufficient setup/hold margin.
Supply Voltage3.15 V to 3.6 V; compatible with standard 3.3 V power rails and tolerant of typical PCB voltage drop.
Operating Temperature–40°C to +85°C; qualified for industrial environments including factory automation and outdoor base stations.
Standby Current (ISB)40 mA max; reduces system power during idle cycles without requiring deep-sleep sequencing.
I/O InterfaceLVTTL-compatible inputs/outputs; eliminates need for external level shifters when interfacing with 3.3 V logic families.
Package48-ball FBGA (BFG48), 7 mm × 7 mm, 0.8 mm pitch; supports high-density PCB layouts with improved thermal dissipation vs. SOJ/TSOP.

Pinout & Package

71V016SA12BFGI is housed in a 48-ball plastic FBGA (BFG48) package per JEDEC MO-276AB, with 0.8 mm ball pitch and 7 mm × 7 mm body size. The package supports reflow soldering and provides low-inductance I/O paths suitable for high-speed memory access.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus; selects one of 65,536 memory locations for read/write operations.
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit data path enabled by BLE; allows partial-word writes without affecting upper byte.
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit data path enabled by BHE; supports independent high-byte manipulation.
CSChip SelectActive-low global enable; places device in active or high-Z state based on address decode assertion.
WEWrite EnableActive-low write strobe; controls direction of I/O buffers and initiates write cycle timing (tWP ≥ 8 ns).
OEOutput EnableActive-low output control; enables data output within 6 ns (tOE), independent of WE state.
BHEHigh-Byte EnableActive-low; gates I/O8–I/O15 during read/write, enabling byte-level granularity.
BLELow-Byte EnableActive-low; gates I/O0–I/O7 during read/write, enabling byte-level granularity.
VDDPower Supply3.3 V supply input; requires local decoupling (e.g., 0.1 µF ceramic) near ball D1/E1.
VSSGroundReference ground plane connection; multiple VSS balls (B1, D3, E4, G1, H3) reduce ground bounce.

Key Features

FeatureDesign Value
Byte-select write capabilityIndependent BHE and BLE pins allow 8-bit writes to either half of the 16-bit word-reducing bus contention and eliminating read-modify-write overhead.
Fast output enabletOE ≤ 6 ns ensures rapid data availability after OE assertion, critical for burst-mode CPU or DMA transfers.
Low-power standby modeISB ≤ 40 mA at max VDD enables energy-efficient operation in always-on industrial modules without external power gating.
Industrial temperature qualificationRated for –40°C to +85°C operation with full AC/DC specifications guaranteed-no derating required across the range.
FBGA-48 mechanical compatibility7 mm × 7 mm footprint matches common FPGA and SoC memory interface layouts, easing board reuse across speed grades (10/12/15/20 ns).

Applications

Network Packet BufferFPGA Configuration Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches before forwarding decisions.

IC Role / Device Role / Timing Role: Asynchronous dual-port buffer holding up to 64K 16-bit words; accessed by MAC controller and switching fabric simultaneously.

Use Value: 12 ns access time supports line-rate 1 Gbps packet buffering with zero wait states; byte enables allow header-only updates without rewriting payload.

Use Scenario: Holding configuration bitstreams for Xilinx Spartan or Intel Cyclone FPGAs during power-up or dynamic reconfiguration.

IC Role / Device Role / Timing Role: Non-volatile boot memory mapped to FPGA's parallel slave select mode; initialized at power-on reset.

Use Value: Industrial temp rating ensures reliable configuration loading in uncontrolled environments; FBGA package withstands thermal cycling in field-deployed equipment.

Real-Time PLC Data LogDSP Co-Processor Memory

Use Scenario: Capturing sensor readings and actuator commands in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Dedicated scratchpad RAM for cyclic data acquisition buffers, isolated from main program memory.

Use Value: Fully static operation eliminates refresh overhead-guaranteeing sub-microsecond response latency for time-critical I/O servicing.

Use Scenario: Providing fast local memory for TI C6000 or Analog Devices SHARC DSPs executing filter banks or FFTs.

IC Role / Device Role / Timing Role: External data memory bank accessed via EMIF with wait-state-free 16-bit transfers.

Use Value: LVTTL compatibility and 12 ns timing align directly with DSP external memory interface requirements-no glue logic needed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI512K × 16-bit, 45 ns access, 3.3 V, TSOP-44; higher density but slower speed.Suitable for non-real-time logging or firmware storage where bandwidth is secondary to capacity.Select only if >12 ns latency is acceptable and TSOP-44 footprint is preferred over FBGA.
AS6C1008-12TIN128K × 8-bit, 12 ns, 3.3 V, SOJ-32; narrower bus, same speed, different package.Applicable in 8-bit microcontroller systems where 16-bit width is unnecessary.Choose when redesigning for cost-sensitive 8-bit buses and SOJ assembly is mandated.

Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12BFGI uniquely delivers 16-bit width, 12 ns speed, and industrial FBGA packaging in a single device-making it optimal for space-constrained, latency-sensitive embedded memory subsystems requiring byte-granular writes.

Availability

71V016SA12BFGI is available at Aetrix Electronics and suitable for industrial control systems, telecommunications infrastructure, FPGA-based prototyping platforms, and real-time data acquisition requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V016SA12BFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71V016 family-now part of Renesas' legacy SRAM portfolio-was designed specifically for high-reliability, low-latency memory applications in industrial and telecom equipment where asynchronous timing, byte-select flexibility, and extended temperature operation are mandatory.

FAQ

What is the maximum clock frequency supported by the 71V016SA12BFGI?

The 71V016SA12BFGI is a fully static asynchronous SRAM and does not use a clock signal. Its performance is defined by timing parameters such as tRC (12 ns read cycle time) and tAA (12 ns address access time), enabling reliable operation in systems with effective bus frequencies up to ~83 MHz when interfaced with appropriate setup/hold margins.

Does the 71V016SA12BFGI require external refresh circuitry?

No, the 71V016SA12BFGI is a static RAM and contains no capacitive storage cells. It retains data indefinitely as long as VDD is applied and does not require refresh cycles, simplifying system design and eliminating refresh-related timing constraints in the 71V016SA12BFGI implementation.

Can the 71V016SA12BFGI be used with 5 V logic interfaces?

No-the 71V016SA12BFGI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic may damage the device or cause undefined behavior; level translation is required for mixed-voltage systems using the 71V016SA12BFGI.

What is the purpose of the BHE and BLE pins on the 71V016SA12BFGI?

The BHE (high-byte enable) and BLE (low-byte enable) pins on the 71V016SA12BFGI provide independent 8-bit write control. When asserted low, they gate the corresponding I/O byte (I/O8–I/O15 or I/O0–I/O7) during write cycles-enabling partial-word updates without reading-modify-writing the full 16-bit word, which improves efficiency in the 71V016SA12BFGI's memory management.

Is the 71V016SA12BFGI RoHS compliant and halogen-free?

Yes-the 71V016SA12BFGI is a green-part designation ('G' in ordering code) and complies with RoHS Directive 2011/65/EU and JEDEC JS709. It is also halogen-free per J-STD-709, with bromine and chlorine content below 900 ppm each, as confirmed in Renesas' official material declarations for the 71V016SA12BFGI.

71V016SA12BFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-LFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (7x7)

71V016SA12BFGI FAQ

1.How can I place an order for 71V016SA12BFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V016SA12BFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V016SA12BFGI reliable?

The price and inventory of 71V016SA12BFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12BFGI is usually 5 days.

3.What payment methods are accepted for 71V016SA12BFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12BFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V016SA12BFGI?

71V016SA12BFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V016SA12BFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V016SA12BFGI?

For technical support, including 71V016SA12BFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12BFGI requirements.

6.How does Aetrix verify that 71V016SA12BFGI is sourced from the original manufacturer or authorized distributors?

All 71V016SA12BFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12BFGI meets industry standards.

7.What is the process for return or replacement of 71V016SA12BFGI?

All 71V016SA12BFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12BFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V016SA12BFGI part is unused and in its original packaging.

Return procedure for 71V016SA12BFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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