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Renesas 71V016SA12BFGI8

Part No.:
71V016SA12BFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
48-LFBGA
Datasheet:
Aetrix71V016SA12BFGI8.pdf
Description:
IC SRAM 1MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,169

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Product details

Overview

71V016SA12BFGI8 from Renesas Electronics is a 64K × 16-bit, 1 Mbit high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, industrial temperature range (–40°C to +85°C), and 48-ball FBGA (BFG48) package. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and features LVTTL-compatible bidirectional I/Os for embedded memory interfacing in real-time control systems.

For engineers reviewing the 71V016SA12BFGI8 datasheet, 71V016SA12BFGI8 pinout, 71V016SA12BFGI8 application, or 71V016SA12BFGI8 equivalent, key selection considerations include its 12 ns read cycle time, industrial-grade reliability, FBGA footprint compatibility, and support for asynchronous byte-select memory access without clocks or refresh.

Technical Context

The 71V016SA12BFGI8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for low-latency memory access. Its dual-byte enable architecture (BHE/BLE) enables independent 8-bit data path control, while the output enable (OE) provides 6 ns output valid timing under industrial conditions.

Operation relies on three critical control inputs: Chip Select (CS), Write Enable (WE), and Output Enable (OE), with truth-table-defined behavior for deselected, read, write, and high-impedance states. All address (A0–A15) and data (I/O0–I/O15) signals are LVTTL-compatible, ensuring seamless integration with 3.3 V logic families.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization64K × 16-bit (1,048,576 bits), enabling 16-bit parallel data bus interfacing
Access Time (tAA)12 ns max at VDD = 3.0–3.6 V and TA = –40°C to +85°C, defining minimum address-to-data delay
Read Cycle Time (tRC)12 ns max, setting minimum interval between successive read operations
Supply Voltage3.15–3.6 V (typ. 3.3 V), compatible with standard LVTTL I/O voltage levels
Operating Temperature–40°C to +85°C, qualified for industrial environments without derating
Package48-ball plastic FBGA (BFG48), 7 mm × 7 mm footprint with 0.8 mm ball pitch
Dynamic Current (ICC)150 mA max at fMAX, determining peak power draw during active read/write bursts
Standby Current (ISB)40 mA max when CS ≥ VHC, supporting low-power idle states in battery-aware designs

Pinout & Package

71V016SA12BFGI8 is housed in a JEDEC-standard 48-ball plastic FBGA (BFG48) package with 7 mm × 7 mm body size and 0.8 mm ball pitch. Pin assignments follow the top-view layout defined in Renesas document 3834 drw 02, with balls arranged in an 8×6 grid (A1–H6).

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus accepting row/column decode for full 64K-word addressing
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit data path enabled by BLE; LVTTL-compatible, ±8 mA drive
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit data path enabled by BHE; electrically isolated from low byte during byte writes
CSChip SelectActive-low global enable; device enters standby (high-Z I/O) when deasserted
WEWrite EnableActive-low control synchronizing write cycles; determines tWP (10 ns min) and tDW (6 ns min)
OEOutput EnableActive-low control enabling output drivers; tOE = 6 ns max ensures fast read response
BHEHigh-Byte EnableActive-low signal gating I/O8–I/O15; allows independent high-byte write/read
BLELow-Byte EnableActive-low signal gating I/O0–I/O7; enables byte-level granularity without full-word overhead
VDDPower SupplySingle 3.3 V supply input; two dedicated VDD balls (D1, E1) reduce IR drop and noise
VSSGroundGround reference; three VSS balls (D4, E4, F1) improve return path integrity

Key Features

FeatureDesign Value
Fully static asynchronous operationNo clock, no refresh required-simplifies timing-critical embedded controller interfaces
Independent high/low byte enables (BHE/BLE)Enables 8-bit sub-word access without external logic, reducing bus contention and PCB routing complexity
12 ns access time at industrial temperatureGuaranteed performance over –40°C to +85°C, eliminating thermal derating in harsh environments
LVTTL-compatible I/OsDirect interface with 3.3 V microcontrollers, FPGAs, and ASICs without level-shifting components
Low-power standby mode40 mA max ISB enables energy-efficient sleep modes in portable or fanless industrial systems
Green-compliant FBGA packagingLead-free, RoHS-compliant BFG48 package supports environmental compliance without performance trade-offs

Applications

Industrial PLC Memory BufferMedical Imaging Frame Store

Use Scenario: Real-time data buffering in programmable logic controllers handling sensor fusion and motion control loops.

IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state memory for deterministic instruction/data fetch in ARM Cortex-M7-based controllers.

Use Value: 12 ns tAA and tRC ensure sub-microsecond memory latency, enabling 80+ kHz servo update rates without pipeline stalls.

Use Scenario: Temporary frame storage in portable ultrasound devices capturing 12-bit grayscale image sequences at 30 fps.

IC Role / Device Role / Timing Role: High-reliability, byte-selectable SRAM buffering raw pixel data between ADC and FPGA-based image processing pipeline.

Use Value: Independent BHE/BLE pins allow selective 8-bit writes per scanline segment, cutting memory bandwidth usage by 50% vs. full-word access.

Avionics Data LoggerTest & Measurement Equipment

Use Scenario: Non-volatile event capture in flight data recorders requiring radiation-tolerant, wide-temperature operation.

IC Role / Device Role / Timing Role: Industrial-grade SRAM acting as volatile scratchpad for pre-triggered waveform snapshots before EEPROM backup.

Use Value: –40°C to +85°C qualification and 40 mA ISB support extended operation in unheated avionics bays with minimal thermal management.

Use Scenario: High-speed digital pattern generation in automated test equipment validating DDR3/DDR4 memory controllers.

IC Role / Device Role / Timing Role: Deterministic-access memory supplying stimulus vectors to DUTs with precise nanosecond-aligned timing windows.

Use Value: 12 ns tAA and 6 ns tOE guarantee repeatable setup/hold margins for <100 MHz test clock domains, reducing false-fail rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI512K × 16-bit, 45 ns access, 3.3 V, TSOP-44; higher density but slower speedSuitable for non-real-time buffering where latency >40 ns is acceptableSelect when system requires larger memory depth and can tolerate longer access delays
AS6C1008-12TIN128K × 8-bit, 12 ns access, 3.3 V, SOJ-32; narrower data bus, same speed gradeRequires external byte merging for 16-bit interfaces; lower pin count reduces routing densityChoose when board space is constrained and 8-bit data path suffices

Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12BFGI8 uniquely delivers 64K × 16-bit organization at 12 ns with industrial temperature support and FBGA packaging-enabling compact, high-bandwidth, thermally robust memory subsystems without bus widening or speed compromise.

Availability

71V016SA12BFGI8 is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging systems, avionics data loggers, and test & measurement equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V016SA12BFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V016SA12BFGI8 belongs to Renesas' legacy IDT high-speed SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial reliability are mandatory.

FAQ

What is the guaranteed maximum access time for 71V016SA12BFGI8 over its full industrial temperature range?

The 71V016SA12BFGI8 guarantees a maximum address access time (tAA) of 12 ns and read cycle time (tRC) of 12 ns across the full industrial temperature range of –40°C to +85°C, as specified in Renesas datasheet table 3834 tbl 10 under "71V016SA12" industrial column. This value is tested and production-qualified-not characterized only.

Does 71V016SA12BFGI8 require external refresh circuitry or clock signals?

No, the 71V016SA12BFGI8 uses fully static asynchronous CMOS design and requires no clocks, timers, or refresh cycles. Its operation is controlled solely by CS, WE, OE, BHE, and BLE signals-making it ideal for deterministic real-time systems where timing predictability is critical. This eliminates refresh overhead and associated jitter in control loops.

Can 71V016SA12BFGI8 be used with 5 V logic interfaces?

No, the 71V016SA12BFGI8 is strictly a 3.3 V LVTTL-compatible device. Its VIH threshold is 2.0 V minimum and VIL is 0.8 V maximum, and absolute maximum input voltage is VDD + 0.5 V (≤4.1 V). Direct connection to 5 V logic will exceed VIN ratings and risk damage. Level translation is required for mixed-voltage systems.

What is the ball pitch and footprint size of the 71V016SA12BFGI8 FBGA package?

The 71V016SA12BFGI8 uses a 48-ball plastic FBGA (BFG48) package with a 7 mm × 7 mm body size and 0.8 mm ball pitch. The ball map follows JEDEC MO-244, with pins assigned per Renesas drawing 3834 drw 02. This compact footprint supports high-density PCB layouts while maintaining manufacturable solder joint reliability.

How does the byte enable functionality (BHE/BLE) operate during write cycles in 71V016SA12BFGI8?

In the 71V016SA12BFGI8, BHE and BLE are active-low signals that independently gate the high (I/O8–I/O15) and low (I/O0–I/O7) data bytes during writes. When only BLE is asserted (low) and BHE is high, only I/O0–I/O7 accept data; similarly, asserting only BHE enables I/O8–I/O15. Both must be low for full 16-bit writes-providing true byte-select capability without external logic.

71V016SA12BFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-LFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (7x7)

71V016SA12BFGI8 FAQ

1.How can I place an order for 71V016SA12BFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V016SA12BFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V016SA12BFGI8 reliable?

The price and inventory of 71V016SA12BFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12BFGI8 is usually 5 days.

3.What payment methods are accepted for 71V016SA12BFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12BFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V016SA12BFGI8?

71V016SA12BFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V016SA12BFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V016SA12BFGI8?

For technical support, including 71V016SA12BFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12BFGI8 requirements.

6.How does Aetrix verify that 71V016SA12BFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V016SA12BFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12BFGI8 meets industry standards.

7.What is the process for return or replacement of 71V016SA12BFGI8?

All 71V016SA12BFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12BFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V016SA12BFGI8 part is unused and in its original packaging.

Return procedure for 71V016SA12BFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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